MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SSM3K324R,LF


Toshiba MOSFET N-Ch U-MOSVI FET ID 4A 30VDSS 200pF
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Toshiba 29449
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AUD 0.0507
Multiples of: 10

4 A30 V109 mOhmsN - Channel 0.4 v to 1 V + 150 C2 WSmd/SmtSOT - 23 - 3ReelSi1 Channel12 V2.2 nCEnhancement  
AO3402


SOT-23 MOSFETs ROHS
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ALJ 29255
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AUD 0.0235
Multiples of: 20

                   
CMPDM7003 TR


MOSFET N-Ch Enh Mode FET 50Vds 50Vdg 350pD
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Central Semiconductor 29249
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AUD 0.1532
Multiples of: 3000

   N - Channel     Smd/SmtSOT - 23ReelSi1 Channel     
SSM3K15AFU,LF(T


Transistor: N-MOSFET; unipolar; 30V; 100mA; 150mW; SC70
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Toshiba 29100
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AUD 0.0555
Multiples of: 30000

                   
2N7002W


MOSFET N-Chan Enhancement Mode Field Effect
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ON Semiconductor 29100
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AUD 0.1562
Multiples of: 3000

115 mA60 V7.5 OhmsN - Channel  - 55 C+ 150 C200 mWSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel20 V Enhancement  
ZXM61P03FTA


MOSFET 30V P-Chnl HDMOS
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Diodes Incorporated 29100
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AUD 0.1607
Multiples of: 3000

1.1 A30 V350 mOhmsP - Channel 1 V- 55 C+ 150 C806 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V4.8 nCEnhancement  
JSM9435


30V 5.3A 51mΩ@10V,5.3A 2W 3V@250uA 80pF@15V P Channel 845pF@15V 22nC@10V -55℃~+150℃@(Tj) SOP-8 MOSFETs ROHS
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JSMSEMI 28847
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AUD 0.0721
Multiples of: 10

                   
2N7002-7-F-ES


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 28362
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AUD 0.0104
Multiples of: 20

                   
AP9926


MOSFET 2 N Channel (Dual) 20V 6.5A 1.5V @ 250uA 24 mΩ @ 6.5A,4.5V SOP-8 RoHS
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Quan Li 27053
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AUD 0.1005
Multiples of: 10

                   
30N06


60V 30A 23mΩ 2.5V N Channel TO-252 MOSFETs ROHS
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HL 24414
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AUD 0.0974
Multiples of: 5

                   
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First...8687888990...

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