MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HP8K22TB


MOSFET 30V Nch+Nch Si MOSFET
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ROHM 29318
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AUD 0.8573
Multiples of: 1

27 A , 57 A30 V6.7 mOhms , 3.6 mOhmsN - Channel 1.3 V- 55 C+ 150 C3 WSmd/SmtHSOP - 8Cut TapeSi2 Channel20 V10 nC , 16.8 nCEnhancement  
SI2300


MOSFET N Trench 20V 6A 1.2V @ 250uA 60 mΩ @ 2.8A,4.5V SOT-23 (SOT-23-3) RoHS
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Hottech 29274
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AUD 0.021
Multiples of: 5

                   
CMPDM7003 TR


MOSFET N-Ch Enh Mode FET 50Vds 50Vdg 350pD
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Central Semiconductor 29249
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AUD 0.1532
Multiples of: 3000

   N - Channel     Smd/SmtSOT - 23ReelSi1 Channel     
TPM2009EP3


20V 660mA 520mΩ@4.5V,1A 100mW 1.1V@250uA 9pF@16V P Channel 113pF@16V +150℃@(Tj) DFN1006-3L MOSFETs ROHS
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TECH PUBLIC 29113
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AUD 0.033
Multiples of: 20

                   
SI2302-MS


SOT-23 MOSFETs ROHS
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MSKSEMI 29100
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AUD 0.0114
Multiples of: 50

                   
MMFTN6001


MOSFET MOSFET, SOT-23, 60V, 0.44A, N, 0.53W
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Diotec 29100
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AUD 0.0321
Multiples of: 20

                   
2N7002E-7-F


60V 250mA 3O@10V,250mA 370mW N Channel SOT-23 MOSFETs ROHS
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Diodes Incorporated 29100
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AUD 0.0395
Multiples of: 3000

300 mA60 V3 OhmsN - Channel 1 V- 55 C+ 150 C540 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V223 pCEnhancement  
LGE2300


Transistor: N-MOSFET; unipolar; 20V; 4A; 1.25W; SOT23
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Luguang 29100
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AUD 0.0644
Multiples of: 20

                   
DMN3190LDW-13


Diodes Incorporated MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss
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Diodes Incorporated 29100
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AUD 0.0804
Multiples of: 10000

1 A30 V190 mOhmsN - Channel 2.8 V- 55 C+ 150 C320 mWSmd/SmtSOT363Reel-2 Channel+/- 20 V2 nCEnhancement  
DMN1260UFA-7B


Diodes Incorporated MOSFET 12V N-Ch Enh FET 8 VGS 60pF 0.92nC
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Diodes Incorporated 29100
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AUD 0.0869
Multiples of: 10000

200 mA12 V366 mOhmsN - Channel 1 V- 55 C+ 150 C0.36 WSmd/SmtX2 - DFN0806 - 3ReelSi1 Channel8 V0.96 nCEnhancement  
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First...8687888990...

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