MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF840PBF


N-Channel 500 V 8A (Tc) 125W (Tc) Through Hole TO-220AB
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Vishay 40754
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AUD 0.6601
Multiples of: 1

8 A500 V850 mOhmsN - Channel 2 V- 55 C+ 150 C125 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V63 nCEnhancement  
NDS9948


Transistor: P-MOSFET x2; unipolar; -60V; -2A; 2W; SO8
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 31525
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AUD 0.3041
Multiples of: 2500

            Powertrench®      
SIDR668ADP-T1-RE3


MOSFET N-CHANNEL 100-VD-S PowerPAK SO-8
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 31444
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AUD 1.7692
Multiples of: 1

104 A100 V4.8 mOhmsN - Channel 4 V- 55 C+ 150 C125 WSMD/SMTSO - 8Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V42 nCEnhancement TrenchFET, PowerPAK
SE2101


SOT-23 MOSFETs ROHS
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SINO-IC 31214
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AUD 0.0222
Multiples of: 20

                   
SPD9103W


SOD-323 MOSFETs ROHS
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TECH PUBLIC 31156
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AUD 0.0609
Multiples of: 10

                   
BSS806NEH6327XTSA1


Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
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Infineon 31087
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AUD 0.0837
Multiples of: 1

            Optimos 2      
2N7000TA


Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.4W; TO92
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ON Semiconductor 31040
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AUD 0.0847
Multiples of: 2000

                   
STP110N8F6


MOSFET N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package
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STMicroelectronics 30337
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AUD 0.9525
Multiples of: 1

110 A80 V6.5 mOhmsN - Channel 2.5 V- 55 C+ 175 C200 WThrough HoleTO - 220 - 3 Si1 Channel10 V150 nCEnhancement Stripfet
AO4407A


MOSFET P Trench 30V 12A 3V @ 250uA 11 mΩ @ 12A,20V SOIC-8_150mil RoHS
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Alpha & Omega 27742
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AUD 0.1753
Multiples of: 5

           -       
DMN6075S-7


MOSFET 60V N-Ch Enh FET 20Vgss 0.8W 600pF
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Diodes Incorporated 22813
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AUD 0.0837
Multiples of: 1

2.5 A60 V85 mOhmsN - Channel 1 V- 55 C+ 150 C1.15 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V12.3 nCEnhancement  
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First...8687888990...

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