MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
8205A


20V 6A 19mΩ 1.2V N Channel TSSOP-8 MOSFETs ROHS
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HL 32514
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AUD 0.0278
Multiples of: 20

                   
CJ3439KDW


MOSFET N & P Trench 20V 750mA,660mA 1.1V @ 250uA 520 mΩ @ 1A,4.5V SOT-363 RoHS
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Changjing Electronics Technology 32392
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AUD 0.0789
Multiples of: 10

                   
IRF9389TRPBF


International Rectifier MOSFET 30V Dual N and P Ch HEXFET 20-8 20VGS
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Infineon 32383
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AUD 0.2397
Multiples of: 1

6.8 A , - 4.6 A30 V22 mOhms , 51 mOhmsN - Channel, P - Channel 1.3 V , - 1.3 V- 55 C+ 150 C2 WSmd/SmtSO - 8ReelSi2 Channel20 V6.8 nC , 8.1 nC  Hexfet
FDC8884


N-Channel 30 V 6.5A (Ta), 8A (Tc) 1.6W (Ta) Surface Mount SuperSOT™-6
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ON Semiconductor 32360
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AUD 0.3368
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6.5 A30 V23 mOhmsn - channel  - 55 C+ 150 C800 mWsmd/smtSSOT - 6Reelsi1 channel20 V   powertrench
PSMN013-60YLX


MOSFET PSMN013-60YL/LFPAK/REEL 7" Q1/
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Nexperia 32360
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AUD 0.4827
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53 A60 V10.8 mOhmsN - Channel 1.4 V- 55 C+ 175 C95 WSmd/SmtLFPAK56 - 5ReelSi1 Channel20 V33.2 nCEnhancement  
SQ4532AEY-T1_BE3


MOSFET NP CHANNEL 30V
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Vishay 32139
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AUD 0.7846
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BSC016N06NSTATMA1


MOSFET DIFFERENTIATED MOSFETS
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Infineon 32027
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AUD 2.3858
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100 A60 V1.6 mOhmsN - Channel 2.1 V- 55 C+ 150 C139 WSmd/SmtPG - TDSON - 8Cut TapeSi1 Channel10 V71 nCEnhancement  
NTA4151PT1H


MOSFET PFET SC75 20V 760MA TR
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ON Semiconductor 32010
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AUD 0.0511
Multiples of: 1

- 760 mA- 20 V360 mOhmsp - channel 450 mV- 55 C+ 150 C301 mWsmd/smtSC - 75 - 3Reelsi1 channel- 1.8 V2.1 nCenhancement  
DMP3028LFDE-13


Diodes Incorporated MOSFET 30V P-Ch Enh FET 32mOhm -10V -6.8A
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Diodes Incorporated 2187
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AUD 0.1439
Multiples of: 5

- 5.3 A- 30 V60 mOhmsP - Channel - 1 v to - 2.4 V- 55 C+ 150 C660 mWSmd/SmtUDFN2020 - 6ReelSi1 Channel20 V10.9 nCEnhancement  
IRFZ44EPBF


Transistor: N-MOSFET; unipolar; 60V; 48A; 110W; TO220AB
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Infineon 0
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AUD 1.3473
Multiples of: 1

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First...8687888990...

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