MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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First...8182838485...
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RQ3E120GNTB


ROHM Semiconductor MOSFET 4.5V Drive Nch MOSFET
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ROHM 32210
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AUD 0.2479
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12 A30 V8.8 mOhmsN - Channel 2.5 V- 55 C+ 150 C2 WSmd/SmtH SMT - 8ReelSi1 Channel20 V10 nC   
SQ4532AEY-T1_BE3


MOSFET NP CHANNEL 30V
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Vishay 32139
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AUD 0.7846
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           Cut Tape       
IRF6648TRPBF


N-Channel 60 V 86A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MN
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Infineon 32064
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AUD 1.5225
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            Hexfet®      
BSC016N06NSTATMA1


MOSFET DIFFERENTIATED MOSFETS
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Infineon 32027
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AUD 2.3858
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100 A60 V1.6 mOhmsN - Channel 2.1 V- 55 C+ 150 C139 WSmd/SmtPG - TDSON - 8Cut TapeSi1 Channel10 V71 nCEnhancement  
NTA4151PT1H


MOSFET PFET SC75 20V 760MA TR
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ON Semiconductor 32010
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AUD 0.0544
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- 760 mA- 20 V360 mOhmsp - channel 450 mV- 55 C+ 150 C301 mWsmd/smtSC - 75 - 3Reelsi1 channel- 1.8 V2.1 nCenhancement  
NTS4409NT1G


MOSFET NFET 25V/8V 75mA 350
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ON Semiconductor 32010
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AUD 0.0912
Multiples of: 3000

750 mA25 V350 mOhmsN - Channel 650 mV- 55 C+ 150 C330 mW (1/3 w)Smd/SmtSC - 70 - 3Cut TapeSi1 Channel4.5 V1.2 nCEnhancement  
DMG6402LVT-7


MOSFET 30V N-Ch 30mOhm 10V VGS 30V 6A
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Diodes Incorporated 32010
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AUD 0.0943
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6 A30 V30 mOhmsN - Channel 1.5 V- 55 C+ 150 C1.75 WSmd/SmtTSOT - 26 - 6Cut TapeSi1 Channel20 V11.4 nCEnhancement  
SIA461DJ-T1-GE3


Vishay Semiconductors MOSFET -20V -12A 17.9W 33mohm 4.5V
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Vishay 32010
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AUD 0.2252
Multiples of: 3000

12 A20 V33 mOhmsP - Channel 400 mV- 55 C+ 150 C17.9 WSmd/SmtSC - 70 - 6-Si1 Channel- 4.5 V18 nCEnhancement Trenchfet, Powerpak
TN2106K1-G


Transistor: N-MOSFET; unipolar; 60V; 0.6A; 360mW; SOT23-3
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Microchip 32010
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AUD 0.2843
Multiples of: 3000

280 mA60 V2.5 OhmsN - Channel 600 mV- 55 C+ 150 C360 mWSmd/SmtSOT - 23 (TO - 236AB)ReelSi1 Channel10 V Enhancement  
SI1012CR-T1-GE3


null 630mA 396mO@600mA,4.5V 240mW null SC-75A MOSFETs ROHS
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Vishay 2905
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AUD 0.1157
Multiples of: 5

600 mA20 V396 mOhmsN - Channel 400 mV- 55 C+ 150 C240 mWSmd/SmtSC - 75AReelSi1 Channel4.5 V1.3 nCEnhancement Trenchfet
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First...8182838485...

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