MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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First...8182838485...
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS138P.215


Transistor: N-MOSFET; unipolar; 60V; 0.36A; 350mW; SOT23
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Nexperia 34568
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AUD 0.0865
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SI1539CDL-T1-BE3


Mosfet Array N and P-Channel 30V 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc) 290mW (Ta), 340mW (Tc) Surface Mount SC-70-6
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Vishay 33171
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AUD 0.1493
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          6 - TSSOP , SC - 88 , SOT - 363Digi - Reel®       
IAUC100N04S6L025ATMA1


MOSFET MOSFET_20V 40V
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Infineon 33141
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AUD 0.6333
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           Cut Tape       
SI1967DH-T1-BE3


Mosfet Array 2 P-Channel (Dual) 20V 1A (Ta), 1.3A (Tc) 740mW (Ta), 1.25W (Tc) Surface Mount SC-70-6
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Vishay 33126
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AUD 0.1917
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          6 - TSSOP , SC - 88 , SOT - 363Digi - Reel®       
SI3464DV-T1-BE3


MOSFET N-CHANNEL 20-V (D-S)
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Vishay 33096
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AUD 0.5558
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8 A20 V24 mOhmsN - Channel 1 V- 55 C+ 150 C3.6 WSMD/SMTTSOP - 6Cut Tape , ReelSi1 Channel- 8 V , + 8 V18 nCEnhancement  
IRLZ44NPBF


MOSFET N Trench 55V 47A 2V @ 250uA 22 mΩ @ 25A,10V TO-220 (TO-220-3) RoHS
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Infineon 31820
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AUD 0.8121
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41 A55 V35 mOhmsN - Channel    83 WThrough HoleTO - 220 - 3TubeSi1 Channel16 V32 nC   
AO3416


SOT-23 MOSFETs ROHS
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Bourne 24347
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AUD 0.05
Multiples of: 10

                   
2SK3019


MOSFET N Channel 30V 100mA 1.5V @ 100uA 8Ω @ 10mA,4V SOT-523 RoHS
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Changjing Electronics Technology 21417
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AUD 0.028
Multiples of: 20

                   
2SK3018


MOSFET N Trench 30V 100mA 1.5V @ 100uA 8 Ω @ 10mA,4V SOT-323 (SC-70) RoHS
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Changjing Electronics Technology 3356
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AUD 0.023
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DMP6185SK3-13


Diodes Incorporated MOSFET 60V P-Ch Enh FET 20Vgs -14A 1.6W
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Diodes Incorporated 129
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AUD 0.9512
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- 3.6 A- 60 V120 mOhmsP - Channel - 3 V- 55 C+ 150 C1.6 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V14 nCEnhancement  
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First...8182838485...

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