MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Si2301CDS-T1-E3


MOSFET 20V 3.1A 1.6W 112mohm @ 4.5V
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Vishay 262288
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AUD 0.2025
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   P - Channel  - 55 C+ 150 C Smd/SmtTO - 236 - 3Reel       
SUD08P06-155L-BE3


MOSFET P-CHANNEL 60V D-S
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Vishay 35041
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AUD 0.8154
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           Cut Tape       
SQ3418AEEV-T1_BE3


MOSFET N-CHANNEL 40V D-S
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Vishay 35017
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AUD 0.6097
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8 A40 V26 mOhmsN - Channel 2.5 V- 55 C+ 175 C5 WSMD/SMTTSOP - 6Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V12.4 nCEnhancement TrenchFET
DMN2046U-7


MOSFET 20V N-Ch Enh Mode 12Vgs 292pF 3.8nC
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Diodes Incorporated 34920
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AUD 0.0633
Multiples of: 3000

3.4 A20 V72 mOhmsN - Channel 400 mV- 55 C+ 150 C760 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V3.8 nCEnhancement  
DMP3030SN-7


30V 700mA 500mW 250mO@10V,400mA P Channel SC-59 MOSFETs ROHS
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Diodes Incorporated 34920
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AUD 0.1626
Multiples of: 3000

700 mA30 V250 mOhmsP - Channel 1 V- 65 C+ 150 C500 mWSmd/SmtSC - 59ReelSi1 Channel10 V Enhancement  
MGSF1N02LT1G


MOSFET NFET SOT23 20V 75mA 90mOhm
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ON Semiconductor 34920
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AUD 0.1696
Multiples of: 3000

750 mA20 V90 mOhmsN - Channel 1 V- 55 C+ 150 C400 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V6000 pCEnhancement  
SSM3K7002CFU,LF


MOSFET Small-Signal MOSFET
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Toshiba 14550
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AUD 0.0299
Multiples of: 3000

170 mA60 V4.7 Ohmsn - channel 1.1 V + 150 C700 mWsmd/smtSOT - 323 - 3Reelsi1 channel+/- 20 V0.27 nCenhancement  
NTS4001NT1G


MOSFET 30V 270mA N-Channel
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ON Semiconductor 9767
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AUD 0.0551
Multiples of: 10

   N - Channel  - 55 C+ 150 C Smd/SmtSC - 70Reel       
FDC610PZ


MOSFET -30V P-CHANNEL
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ON Semiconductor 5820
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AUD 0.173
Multiples of: 3000

   P - Channel  - 55 C+ 150 C Smd/SmtSSOT - 6Reel       
LP2301LT1G


MOSFET P Trench 20V 2.3A 900mV @ 250uA 100 mΩ @ 2.8A,4.5V SOT-23 (SOT-23-3) RoHS
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Leshan 0
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AUD 0.0415
Multiples of: 10

                   
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