MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF3205PBF


MOSFET N Trench 55V 110A 4V @ 250uA 8 mΩ @ 62A,10V TO-220 (TO-220-3) RoHS
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Infineon 58180
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AUD 0.4503
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            Hexfet®      
IAUZ40N06S5N050ATMA1


N-Channel 60V 40A (Tj) 71W (Tc) Surface Mount PG-TSDSON-8-33
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Infineon 34110
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AUD 0.8707
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          8 - PowertdfnTape And ReelMosfet (Metal Oxide)      
TP2510N8


Trans MOSFET P-CH Si 100V 0.48A 4-Pin(3+Tab) SOT-89
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Microchip 34094
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AUD 2.2857
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480 mA100 V3.5 OhmsP - Channel  - 55 C+ 150 C1.6 WSmd/SmtSOT - 89 - 3Cut TapeSi1 Channel20 V Enhancement  
NDD60N360U1T4G


ON Semiconductor MOSFET NFET DPAK 600V 114A 360MO
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ON Semiconductor 33950
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AUD 1.8961
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11 A600 V360 mOhmsN - Channel     Smd/SmtDPAK - 3ReelSi      
PSMN5R2-60YLX


MOSFET PSMN5R2-60YL/LFPAK/REEL 7" Q1/
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Nexperia 33310
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AUD 0.8706
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100 A60 V5.2 mOhmsN - Channel 1.4 V- 55 C+ 175 C195 WSMD/SMTSOT - 669 - 5Reel , Cut TapeSi1 Channel- 20 V , 20 V78.4 nCEnhancement  
A09T


SOT-23 MOSFETs ROHS
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OSEN 33212
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AUD 0.0264
Multiples of: 20

                   
2SK3018


MOSFET SOT23 RoHS
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TWGMC 29973
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AUD 0.0179
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SI1416EDH-T1-BE3


N-Channel 30V 3.9A (Ta), 3.9A (Tc) 1.56W (Ta), 2.8W (Tc) Surface Mount SC-70-6
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Vishay 28356
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AUD 0.1634
Multiples of: 1

3.9 A30 V58 mOhmsN - Channel 1.4 V- 55 C+ 150 C1.56 WSMD/SMTSOT - 363 - 6Cut Tape , ReelSi1 Channel- 12 V , + 12 V12 nCEnhancement TrenchFET
SSM3K72KFS,LF(T


Transistor: N-MOSFET; unipolar; 60V; 300mA; 150mW; SC75
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Toshiba 16422
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AUD 0.0639
Multiples of: 10

                   
SI1012CR-T1-GE3


null 630mA 396mO@600mA,4.5V 240mW null SC-75A MOSFETs ROHS
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Vishay 882
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AUD 0.1205
Multiples of: 5

600 mA20 V396 mOhmsN - Channel 400 mV- 55 C+ 150 C240 mWSmd/SmtSC - 75AReelSi1 Channel4.5 V1.3 nCEnhancement Trenchfet
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