MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTZD3152PT1H


ON Semiconductor MOSFET PFET SOT563 20V 430MA TR
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 101268
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AUD 0.1463
Multiples of: 1

- 430 mA- 20 V900 mOhmsp - channel     smd/smtSOT - 563 - 6Reelsi2 channel     
SI1427EDH-T1-BE3


P-Channel 20V 2A (Ta), 2A (Tc) 1.56W (Ta), 2.8W (Tc) Surface Mount SC-70-6
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Vishay 99195
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AUD 0.1588
Multiples of: 1

2 A20 V165 mOhmsP - Channel 1 V- 55 C+ 150 C1.56 WSMD/SMTSOT - 363 - 6Cut Tape , ReelSi1 Channel- 8 V , + 8 V21 nCEnhancement TrenchFET
SI3407DV-T1-BE3


MOSFET 20V P-CHANNEL
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Vishay 98925
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AUD 0.3154
Multiples of: 1

8 A20 V32.7 mOhmsP - Channel 1.5 V- 55 C+ 150 C4.2 WSMD/SMTTSOP - 6Reel , Cut TapeSi1 Channel- 12 V , + 12 V21 nCEnhancement  
PMPB27EP,115


MOSFET PMPB27EP/SOT1220/REEL7
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Nexperia 98904
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AUD 0.3909
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- 8.8 A- 30 V24 mOhmsP - Channel - 1.5 V- 55 C+ 150 C12.5 WSmd/SmtDfn2020md - 6Reel   30 nCEnhancement  
Si1467DH-T1-E3


MOSFET 20V 2.7A 2.78W 90mohm @ 4.5V
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Vishay 98773
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AUD 0.3614
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2.7 A- 20 V150 mOhmsP - Channel  - 55 C+ 150 C2.78 WSmd/SmtSOT - 363 - 6ReelSi1 Channel8 V9 nCEnhancement Trenchfet
40N06D


60V 40A 12mΩ 2.5V N Channel PDFN-8(3x3) MOSFETs ROHS
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HL 98634
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AUD 0.1028
Multiples of: 5

                   
FQPF9N50CF


Transistor: N-MOSFET; unipolar; 500V; 5.4A; 44W; TO220FP
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ON Semiconductor 97853
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AUD 1.3348
Multiples of: 1

            Qfet®      
SK2301AAT


SOT-523 MOSFETs ROHS
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Shikues 79617
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AUD 0.0351
Multiples of: 20

                   
2N7000-D26Z


MOSFET N Trench 60V 200mA 3V @ 1mA 5 Ω @ 500mA,10V TO-92-3L RoHS
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ON Semiconductor 36860
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AUD 0.1159
Multiples of: 2000

200 mA60 V1.2 OhmsN - Channel  - 55 C+ 150 C400 mWThrough HoleTO - 92 - 3Cut TapeSi1 Channel20 V Enhancement  
DMP2018LFK-7


MOSFET MOSFET BVDSS: 8V-24V U-DFN2523-6 T&R 3K
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Diodes Incorporated 0
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AUD 0.2454
Multiples of: 3000

9.2 A20 V16 mOhmsP - Channel 1.2 V- 55 C+ 150 C2.1 WSMD/SMTU - DFN2523 - 6Reel , Cut TapeSi1 Channel- 12 V , 12 V53 nCEnhancement  
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