MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI3483DDV-T1-BE3


MOSFET P-CHANNEL 30-V (D-S)
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 108954
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AUD 0.4942
Multiples of: 1

8 A30 V31.2 mOhmsP - Channel 2.2 V- 55 C+ 150 C3 WSMD/SMTTSOP - 6Cut Tape , ReelSi1 Channel- 20 V , + 16 V4.5 nCEnhancement  
IRFS4410ZTRLPBF


MOSFET N Trench 100V 97A 4V @ 150uA 9 mΩ @ 58A,10V TO-263-2 RoHS
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Infineon 108640
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AUD 1.306
Multiples of: 800

97 A100 V9 mOhmsN - Channel 4 V + 175 C230 WSmd/SmtD2PAKReelSi1 Channel 120 nC   
BSS139H6327XTSA1


Transistor: N-MOSFET; unipolar; 250V; 0.1A; 0.36W; SOT23
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Infineon 107670
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AUD 0.1541
Multiples of: 3000

            Sipmos      
DMP6180SK3Q-13


MOSFET MOSFETBVDSS: 41V-60V
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Diodes Incorporated 107648
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AUD 0.3497
Multiples of: 1

14 A60 V60 mOhmsP - Channel 1.2 V- 55 C+ 150 C40 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V17.1 nCEnhancementAec - Q101 
IPA60R520C6XKSA1


Transistor: N-MOSFET; unipolar; 600V; 8.1A; 29W; TO220FP
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Infineon 106719
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AUD 1.1998
Multiples of: 1

            coolmos c6      
FCH041N65F_F085


Fairchild Semiconductor MOSFET 650V N-Channel SuperFET II MOSFET
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ON Semiconductor 106506
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AUD 15.486
Multiples of: 450

76 A650 V96 mOhmsn - channel 3 V- 55 C+ 150 C595 Wthrough holeTO - 247 - 3Tubesi1 channel+/- 20 V234 nCenhancement superfet ii
IRLL110TRPBF-BE3


MOSFET 100V N-CH
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Vishay 106182
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AUD 0.9323
Multiples of: 1

1.5 A100 V540 mOhmsN - Channel 2 V- 55 C+ 150 C3.1 WSMD/SMTSOT - 223 - 4Cut Tape , ReelSi1 Channel- 10 V , + 10 V6.1 nCEnhancement  
BUK9Y113-100E,115


MOSFET N-channel 100 V 113 mo FET
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Nexperia 105567
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AUD 0.5308
Multiples of: 1

12 A100 V97 mOhmsN - Channel 1.7 V- 55 C+ 175 C45 WSmd/SmtLFPAK56 - 5ReelSi1 Channel15 V8.4 nCEnhancement  
BSS138


50V 340mA 2.5@10V,0.34A 350mW 1.6V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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hongjiacheng 102432
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AUD 0.0147
Multiples of: 50

                   
FDV301N


Transistor: N-MOSFET; unipolar; 25V; 0.22A; 0.35W; SOT23
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ON Semiconductor 29100
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AUD 0.0344
Multiples of: 3000

                   
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