MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSP299H6327XUSA1


Transistor: N-MOSFET; unipolar; 500V; 0.4A; 1.8W; SOT223
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Infineon 97970
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AUD 0.6216
Multiples of: 1

            sipmos      
AP2301


MOSFET P Trench 20V 3A 1V @ 250uA 110 mΩ @ 3A,4.5V SOT-23 RoHS
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Quan Li 97562
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AUD 0.0339
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SI1013CX-T1-GE3


Vishay Semiconductors MOSFET -20V -.45A .19W
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Vishay 97000
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AUD 0.1154
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           ReelSi     Trenchfet
STD10PF06-1


P-Channel 60 V 10A (Tc) 40W (Tc) Through Hole I-PAK
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STMicroelectronics 96701
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AUD 0.9533
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10 A- 60 V180 mOhmsp - channel20 V - 65 C+ 175 C40 Wthrough holeIPAK - 3Tube    enhancement  
3LP01S-TL-E


P-Channel 30 V 100mA (Ta) 150mW (Ta) Surface Mount SMCP
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ON Semiconductor 96030
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AUD 0.1279
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- 100 mA- 30 V27 OhmsP - Channel  - 55 C+ 150 C150 mWSmd/SmtSMCP - 3ReelSi1 Channel10 V1.43 nC   
SI2336DS-T1-BE3


MOSFET N-CHANNEL 30V D-S
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Vishay 95965
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AUD 0.2519
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           Cut Tape       
BSS169H6327XT


MOSFET SIPMOS Small Signal Transistor
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Infineon 95957
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AUD 0.2437
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90 mA100 V6 OhmsN - Channel 2.9 V- 55 C+ 150 C360 mWSmd/SmtPG - SOT - 23ReelSi1 Channel10 V2.1 nCDepletionAec - Q101 
SI3443DDV-T1-BE3


MOSFET P-CHANNEL 20-V (D-S)
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Vishay 95923
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AUD 0.1508
Multiples of: 1

4 A20 V90 mOhmsP - Channel 1.5 V- 55 C+ 150 C2.7 WSMD/SMTTSOP - 6Cut Tape , ReelSi1 Channel- 12 V , + 12 V9 nCEnhancement  
BSD235C H6327


Infineon Technologies MOSFET N and P-Ch 20V 950mA -530mA SOT-363-6
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Infineon 94797
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AUD 0.1069
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950 mA , 530 mA20 V266 mOhms , 745 mOhmsN - Channel, P - Channel 700 mV , 1.2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 363 - 6-Si2 Channel12 V340 pC , - 400 pCEnhancementAec - Q101 
AO3401A


30V 4.2A 60mΩ@10V,4.2A 1.2W 1.3V@250uA 85pF@15V P Channel 1050pF@15V +150℃@(Tj) SOT-23 MOSFETs ROHS
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GOODWORK 31913
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AUD 0.0304
Multiples of: 20

                   
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