MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002K


60V 340mA 0.35W 0.9Ω@10V,500mA 1.3V@1mA 10pF@10V N Channel 40pF@10V -55℃~+150℃@(Tj) SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Changjing Electronics Technology 149477
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AUD 0.0145
Multiples of: 50

                   
IRLZ34NSTRLPBF


N-Channel 55 V 30A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK
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Infineon 105536
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AUD 0.7836
Multiples of: 800

30 A55 V60 mOhmsN - Channel    68 WSmd/SmtD2PAKReelSi1 Channel16 V16.7 nC   
PMV65XPEAR


P-Channel 20 V 2.8A (Ta) 480mW (Ta), 6.25W (Tc) Surface Mount TO-236AB
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Nexperia 105401
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AUD 0.3484
Multiples of: 1

3.3 A20 V67 mOhmsP - Channel 750 mV- 55 C+ 150 C890 mWSmd/SmtTO - 236AB - 3Cut TapeSi1 Channel- 4.5 V9 nCEnhancement  
2N7002-HXY


60V 300mA 350mW 2Ω@10V,0.5A 1.9V@250uA N Channel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HXY MOS 105303
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AUD 0.0101
Multiples of: 20

                   
BSS84PWH6327XTSA1


Transistor: P-MOSFET; unipolar; -60V; -0.15A; 0.3W; PG-SOT-323
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Infineon 105289
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AUD 0.0493
Multiples of: 1

            Sipmos      
SI1029X-T1-GE3


MOSFET N/P-Ch MOSFET 60V 1.25/5.0ohms@10V
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Vishay 104760
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AUD 0.1
Multiples of: 3000

   N And P - Channel  - 55 C+ 150 C Smd/SmtSC - 89 - 6Reel      Trenchfet
DMN62D0UDW-7


MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
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Diodes Incorporated 103424
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AUD 0.0722
Multiples of: 1

350 mA , 350 mA60 v , 60 V1.2 Ohms , 1.2 OhmsN - Channel 500 mV , 500 mV- 55 C+ 150 C320 mWSmd/SmtSOT - 363 - 6ReelSi2 Channel+/- 20 v , +/- 20 V500 pC , 500 pCEnhancement  
FDS6690A


Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8
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ON Semiconductor 101850
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AUD 0.4823
Multiples of: 2500

   N Channel               
AO3400


30V 5A 35mΩ@10V,5A 1.4W N Channel SOT-23 MOSFETs ROHS
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Bourne 100802
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AUD 0.0435
Multiples of: 20

                   
DMN6140L-7


Diodes Incorporated MOSFET 31V to 99V N-Ch FET 60Vds 20Vgs 2.3A
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Diodes Incorporated 11640
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AUD 0.0681
Multiples of: 5

2.3 A60 V140 mOhmsN - Channel20 V3 V- 55 C+ 150 C1.3 WSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V8.6 nCEnhancement  
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