MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDMA86151L


Fairchild Semiconductor MOSFET
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ON Semiconductor 107670
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AUD 0.869
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3.3 A100 V88 mOhmsN - Channel 2 V- 55 C+ 150 C2.4 WSmd/SmtMICRO - FET - 6ReelSi1 Channel20 V5.2 nCEnhancement Powertrench
JSM2301S


20V 2.3A 90mΩ@4.5V,2.8A 350mW 1V@250uA 55pF@10V P Channel 405pF@10V 5.4nC@4.5V +150℃@(Tj) SOT-23 MOSFETs ROHS
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JSMSEMI 107088
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AUD 0.0127
Multiples of: 50

                   
IPA60R520C6XKSA1


Transistor: N-MOSFET; unipolar; 600V; 8.1A; 29W; TO220FP
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Infineon 106719
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AUD 1.1998
Multiples of: 1

            coolmos c6      
IRLML0030TRPBF


MOSFET N Trench 30V 5.3A 2.3V @ 25uA 27 mΩ @ 5.2A,10V SOT-23 (SOT-23-3) RoHS
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Infineon 105975
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AUD 0.1313
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5.3 A30 V27 mOhmsN - Channel 1.3 V- 55 C+ 150 C1.3 WSmd/SmtSOT - 23ReelSi1 Channel10 V2.6 nCEnhancement  
15N10


100V 15A 85mΩ 2.5V N Channel TO-252 MOSFETs ROHS
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HL 103688
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AUD 0.0858
Multiples of: 5

                   
AP2003


20V 3A 23mΩ@4.5V,3A 800mW 1PCSN-Channel&1PCSP-Channel SOT-23-6 MOSFETs ROHS
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Quan Li 103159
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AUD 0.0945
Multiples of: 10

                   
SI2371EDS-T1-BE3


MOSFETs SOT23 P-CH 30V 3.7A
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Vishay 103152
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AUD 0.1215
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4.8 A30 V45 mOhmsP - Channel 1.5 V- 55 C+ 150 C1.7 WSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 12 V , 12 V10.6 nCEnhancement  
2N7002BKW,115


MOSFET Single N-Channel 60V 300mA
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Nexperia 80985
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AUD 0.046
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310 mA60 V1.6 OhmsN - Channel 1.1 V- 55 C+ 150 C330 mW (1/3 w)Smd/SmtSOT - 323ReelSi1 Channel10 V0.5 nCEnhancement  
BSS138N H6433


Infineon Technologies MOSFET N-Ch 60V 230mA SOT-23-3
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Infineon 36405
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AUD 0.0673
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230 mA60 V2.2 OhmsN - Channel 600 mV- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V1.4 nCEnhancement  
AO3400


SOT-23 MOSFETs ROHS
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Microdiode Electronics 0
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AUD 0.0369
Multiples of: 20

                   
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