MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2301


MOSFET P Trench 20V 3A 1V @ 250uA 110 mΩ @ 3A,4.5V SOT-23 (SOT-23-3) RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Bourne 106118
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AUD 0.026
Multiples of: 50

                   
UMW30N06


MOSFET N Trench 60V 25A (Tc) 2.5V @ 250uA 30 mΩ @ 15A,10V TO-252 RoHS
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Youtai 105982
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AUD 0.12
Multiples of: 5

                   
PMV250EPEA


MOSFET, P-CH, AEC-Q101, -40V, SOT-23-3
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Nexperia 105443
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AUD 0.147
Multiples of: 5

   P Channel               
AO3400-HXY


30V 5.8A 28mΩ@10V,5.8A 1.4W N Channel SOT-23 MOSFETs ROHS
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HXY MOS 105196
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AUD 0.023
Multiples of: 50

                   
SI2312CDS-T1-GE3


MOSFET 20V Vds 8V Vgs SOT-23
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Vishay 104760
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AUD 0.6339
Multiples of: 3000

6 A20 V31.8 mOhmsN - Channel 450 mV- 55 C+ 150 C2.1 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V18 nCEnhancement Trenchfet
IRLZ34NSTRLPBF


N-Channel 55 V 30A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK
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Infineon 104760
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AUD 0.7679
Multiples of: 800

30 A55 V60 mOhmsN - Channel    68 WSmd/SmtD2PAKReelSi1 Channel16 V16.7 nC   
BSS806NH6327XTSA1


Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
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Infineon 103837
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AUD 0.1053
Multiples of: 1

            Optimos 2      
SI2371EDS-T1-BE3


MOSFETs SOT23 P-CH 30V 3.7A
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Vishay 103012
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AUD 0.1163
Multiples of: 1

4.8 A30 V45 mOhmsP - Channel 1.5 V- 55 C+ 150 C1.7 WSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 12 V , 12 V10.6 nCEnhancement  
2N7002K


SOT-23 MOSFETs ROHS
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PAKER Microelectronics 102820
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AUD 0.0147
Multiples of: 50

                   
BSS308PEH6327XTSA1


Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; PG-SOT23
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Infineon 102598
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AUD 0.1084
Multiples of: 1

            Optimos P3      
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