MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NDS355AN


Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.5W; SOT23
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ON Semiconductor 174600
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AUD 0.1852
Multiples of: 3000

   N Channel               
SI1869DH-T1-BE3


Power Switch/Driver 1:1 P-Channel 1.2A SC-70-6
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Vishay 173919
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AUD 0.3405
Multiples of: 1

1.2 A20 V165 mOhmsP - Channel -- 55 C+ 150 C1 WSMD/SMTSOT - 363 - 6Reel , Cut TapeSi2 Channel--Enhancement  
STB6N80K5


STMicroelectronics MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 173630
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AUD 1.7016
Multiples of: 1000

4.5 A800 V1.6 OhmsN - Channel+/- 30 V4 V- 55 C+ 150 C110 WSmd/SmtD2PAK - 3Cut TapeSi1 Channel30 V7.5 nCEnhancement Mdmesh
2N7002


Transistor: N-MOSFET; unipolar; 60V; 0.8A; 0.2W; SOT23
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ON Semiconductor 171690
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AUD 0.0513
Multiples of: 3000

                   
2302


20V 3A 45m 1.25W SOT-23 MOSFETs ROHS
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OSEN 169732
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AUD 0.0109
Multiples of: 50

                   
PMGD280UN,115


Mosfet Array 2 N-Channel (Dual) 20V 870mA 400mW Surface Mount 6-TSSOP
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Nexperia 169341
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AUD 0.1371
Multiples of: 1

870 mA20 V340 mOhmsN - Channel 450 mV- 55 C+ 150 C0.4 WSmd/SmtSOT - 363ReelSi2 Channel4.5 V0.89 nCEnhancement  
CJ3404


MOSFET N Trench 30V 5.8A 3V @ 250uA 30 mΩ @ 5.8A,10V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 164402
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AUD 0.0453
Multiples of: 10

                   
AP2302B


MOSFET N Trench 20V 2.8A 1.2V @ 50uA 55 mΩ @ 2.8A,4.5V SOT-23 RoHS
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Quan Li 160680
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AUD 0.0219
Multiples of: 50

                   
JSM2301S


20V 2.3A 90mΩ@4.5V,2.8A 350mW 1V@250uA 55pF@10V P Channel 405pF@10V 5.4nC@4.5V +150℃@(Tj) SOT-23 MOSFETs ROHS
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JSMSEMI 159912
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AUD 0.0091
Multiples of: 50

                   
IRFHS8242TRPBF


International Rectifier MOSFET 25V 1 N-CH HEXFET 13mOhms 4.3nC
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Infineon 3880
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AUD 0.3106
Multiples of: 1

9.9 A25 V17 mOhmsN - Channel20 V1.8 V- 55 C+ 150 C2.1 WSmd/SmtPQFN - 6ReelSi1 Channel20 V4.3 nC   
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