MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002LT1G


MOSFET 60V 115mA N-Channel
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ON Semiconductor 242538
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AUD 0.0287
Multiples of: 20

115 mA60 V7.5 OhmsN - Channel 1 V- 55 C+ 150 C300 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
SI2305


MOSFET P Trench 12V 4.1A 900mV @ 250uA 90 mΩ @ 2A,1.8V SOT-23 (SOT-23-3) RoHS
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Hottech 211809
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AUD 0.039
Multiples of: 10

                   
SI3590DV-T1-E3


MOSFET -30V Vds 12V Vgs TSOP-6 N&P PAIR
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Vishay 202207
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AUD 0.4526
Multiples of: 1

   N And P - Channel  - 55 C+ 150 C Smd/SmtTSOP - 6Reel       
FDB050AN06A0


MOSFET 60V N-Ch PowerTrench MOSFET
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ON Semiconductor 201760
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AUD 2.25
Multiples of: 800

80 A60 V4.3 mOhmsN - Channel  - 55 C+ 175 C245 WSmd/SmtTO - 263ReelSi1 Channel20 V Enhancement Powertrench
L2SK3018WT1G


MOSFET N Channel 30V 100mA 1.5V @ 100uA 8O @ 10mA,4V SC-70 RoHS
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Leshan 199199
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AUD 0.0332
Multiples of: 20

                   
BSS138


MOSFET N Trench 50V 220mA 1.5V @ 1mA 3.5 Ω @ 220mA,10V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 191419
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AUD 0.0206
Multiples of: 20

                   
BSS123LT1G


MOSFET 100V 170mA N-Channel
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ON Semiconductor 185619
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AUD 0.0374
Multiples of: 10

170 mA100 V6 OhmsN - Channel 1.6 V- 55 C+ 150 C225 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
AO3401A


MOSFET P Trench 30V 4A 1.3V @ 250uA 44 mΩ @ 4.3A,10V SOT-23-3L RoHS
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Alpha & Omega 68229
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AUD 0.0943
Multiples of: 5

4 A  P    1.4 WSurface Mount      Enhancement  
BSS7728NH6327XTSA2


Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
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Infineon 55290
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AUD 0.0818
Multiples of: 1

            Sipmos      
IRF2807ZPBF


Transistor: N-MOSFET; unipolar; 75V; 89A; 170W; TO220AB
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Infineon 743
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AUD 1.5363
Multiples of: 1

89 A75 V9.4 mOhmsN - Channel    170 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V71 nC   
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