MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQA410EJ-T1_GE3


MOSFET 20V 7.8A 13.6W AEC-Q101 Qualified
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Vishay 193217
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AUD 0.3787
Multiples of: 1

7.8 A20 V28 mOhmsN - Channel 0.6 V- 55 C+ 175 C13.6 WSmd/SmtPOWERPAK - 6ReelSi1 Channel8 V5 nCEnhancementAec - Q101Trenchfet
AP2301B


20V 2A 130mΩ@4.5V,2A 750mW 950mV@250uA 27pF@6V P Channel 210pF@6V SOT-23-3 MOSFETs ROHS
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Quan Li 192322
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AUD 0.0295
Multiples of: 50

                   
DMG1012TQ-7


null 630mA 400mO@600mA,4.5V 280mW null SOT-523 MOSFETs ROHS
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Diodes Incorporated 191492
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AUD 0.0663
Multiples of: 1

630 mA20 V400 mOhmsN - Channel 500 mV- 55 C+ 150 C280 mWSmd/SmtSOT - 523 - 3Cut TapeSi1 Channel4.5 V736.6 pCEnhancementAec - Q101 
AO3400A


MOSFET N Channel 30V 5.2A 1.5V @ 250uA 35mΩ @ 5A,10V SOT-23 RoHS
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HUASHUO 190508
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AUD 0.0334
Multiples of: 20

                   
FDC86244


MOSFET 150V N-Channel PowerTrench MOSFET
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ON Semiconductor 189150
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AUD 0.631
Multiples of: 3000

2.3 A150 V144 mOhmsN - Channel   + 150 C1.6 WSmd/SmtSSOT - 6ReelSi1 Channel    Powertrench
PJE8408_R1_00001


MOSFET /E08/TR/7"/HF/4K/SOT-523/MOS/SOT/NFET-20TBMN/NF20TB-QI08/PJ///
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Panjit 188971
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AUD 0.0751
Multiples of: 1

500 mA20 V3 OhmsN - Channel 900 mV- 55 C+ 150 C300 mWSMD/SMTSOT - 523 - 3Reel , Cut TapeSi1 Channel- 10 V , + 10 V1.4 nCEnhancement  
SI2307CDS-T1-BE3


P-Channel 30V 2.7A (Ta), 3.5A (Tc) 1.1W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)
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Vishay 187281
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AUD 0.2479
Multiples of: 1

          TO - 236 - 3 , SC - 59 , SOT - 23 - 3Tape And ReelMosfet (Metal Oxide)      
PMZ1000UN,315


MOSFET MOSFET N-CH
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Nexperia 184300
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AUD 0.1528
Multiples of: 1

480 mA30 V1 Ohmsn - channel     smd/smtSOT - 883 - 3Reelsi1 channel     
SI1869DH-T1-BE3


Power Switch/Driver 1:1 P-Channel 1.2A SC-70-6
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Vishay 173919
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AUD 0.3405
Multiples of: 1

1.2 A20 V165 mOhmsP - Channel -- 55 C+ 150 C1 WSMD/SMTSOT - 363 - 6Reel , Cut TapeSi2 Channel--Enhancement  
NX7002AKS,115


NXP Semiconductors MOSFET 60 V, single N-chan Trench MOSFET
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Nexperia 1493
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AUD 0.0964
Multiples of: 10

170 mA60 V3 OhmsN - Channel 1.6 V- 55 C+ 150 C1.06 WSmd/SmtTSSOP - 6ReelSi2 Channel 0.33 nCEnhancement  
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