MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2302S


SOT-23 MOSFETs ROHS
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GOODWORK 260251
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AUD 0.0137
Multiples of: 50

                   
2N7002E-T1-E3


60V 240mA 3O@10V,250mA 350mW N Channel SOT-23 MOSFETs ROHS
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Vishay 226723
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AUD 0.1231
Multiples of: 1

240 mA60 V3 OhmsN - Channel 1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 23ReelSi1 Channel4.5 V0.6 nCEnhancement  
AP2300


MOSFET N Trench 20V 5.2A (Tc) 1.5V @ 250uA 35 mΩ @ 5.2A,2.5V SOT23 RoHS
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Quan Li 223148
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AUD 0.0365
Multiples of: 50

                   
PJC138K_R1_00001


MOSFET N Trench 50V 360mA 1.5V @ 250uA 1.6 Ω @ 500mA,10V SOT-323 RoHS
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Panjit 221415
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AUD 0.046
Multiples of: 1

                   
FDD3706


N-Channel 20 V 14.7A (Ta), 50A (Tc) 3.8W (Ta), 44W (Tc) Surface Mount TO-252AA
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ON Semiconductor 221400
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AUD 0.9728
Multiples of: 1

50 A20 V9 mOhmsn - channel  - 55 C+ 175 C3.8 Wsmd/smtTO - 252AAReelsi1 channel12 V enhancement powertrench
IPA60R950C6XKSA1


Transistor: N-MOSFET; unipolar; 600V; 4.4A; 26W; TO220FP
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Infineon 216950
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AUD 1.0884
Multiples of: 1

            Coolmos C6      
L2SK3018WT1G


MOSFET N Channel 30V 100mA 1.5V @ 100uA 8O @ 10mA,4V SC-70 RoHS
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Leshan 207250
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AUD 0.0345
Multiples of: 20

                   
BSS138K


50V 300mA 1.5@10V,500mA 300mW 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 207027
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AUD 0.0177
Multiples of: 10

                   
BSS138


MOSFET N Trench 50V 220mA 1.5V @ 1mA 3.5 Ω @ 220mA,10V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 199723
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AUD 0.028
Multiples of: 20

                   
SI2309CDS-T1-GE3


MOSFET -60V Vds 20V Vgs SOT-23
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Vishay 14
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AUD 0.1374
Multiples of: 5

1.6 A60 V345 mOhmsP - Channel 1 V- 55 C+ 150 C1.7 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V4.1 nCEnhancement Trenchfet
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