MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AP2301B


20V 2A 130mΩ@4.5V,2A 750mW 950mV@250uA 27pF@6V P Channel 210pF@6V SOT-23-3 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Quan Li 192322
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AUD 0.0295
Multiples of: 50

                   
NX3008NBKW,115


N-Channel 30 V 350mA (Ta) 260mW (Ta), 830mW (Tc) Surface Mount SOT-323
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Nexperia 190826
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AUD 0.0542
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 323 - 3Reel       
NTLGF3501NT2G


Trans MOSFET N-CH 20V 3.4A 6-Pin DFN EP T/R
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ON Semiconductor 186240
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AUD 0.8125
Multiples of: 1

5.8 A20 V9 mOhmsn - channel  - 55 C+ 150 C1.74 Wsmd/smtDFN - 6Cut Tapesi1 channel20 V enhancement  
PMZ1000UN,315


MOSFET MOSFET N-CH
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Nexperia 184300
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AUD 0.1597
Multiples of: 1

480 mA30 V1 Ohmsn - channel     smd/smtSOT - 883 - 3Reelsi1 channel     
BSZ440N10NS3GATMA1


Transistor: N-MOSFET; unipolar; 100V; 18A; 29W; PG-TSDSON-8
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Infineon 184300
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AUD 0.3918
Multiples of: 5000

            Optimos 3      
PJE8408_R1_00001


MOSFET /E08/TR/7"/HF/4K/SOT-523/MOS/SOT/NFET-20TBMN/NF20TB-QI08/PJ///
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Panjit 183496
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AUD 0.0706
Multiples of: 1

500 mA20 V3 OhmsN - Channel 900 mV- 55 C+ 150 C300 mWSMD/SMTSOT - 523 - 3Reel , Cut TapeSi1 Channel- 10 V , + 10 V1.4 nCEnhancement  
FDZ193P


MOSFET MFET-20V P-CH 1.7V PowerTrench WL-CSP
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ON Semiconductor 183328
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AUD 0.3985
Multiples of: 1

3 A20 V66 mOhmsp - channel  - 55 C+ 150 C1.5 Wsmd/smtWL - CSPReelsi1 channel12 V enhancement powertrench
SI2307CDS-T1-BE3


P-Channel 30V 2.7A (Ta), 3.5A (Tc) 1.1W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)
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Vishay 182904
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AUD 0.2403
Multiples of: 1

          TO - 236 - 3 , SC - 59 , SOT - 23 - 3Tape And ReelMosfet (Metal Oxide)      
FDY301NZ


Transistor: N-MOSFET; unipolar; 20V; 0.2A; 0.625W; SOT523
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ON Semiconductor 182119
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AUD 0.1726
Multiples of: 1

            powertrench®      
BSS138NH6327XTSA2


Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
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Infineon 181552
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between Wed. 18 Feb to Fri. 20 Feb Calender.png

AUD 0.0525
Multiples of: 1

            Sipmos      
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