MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PJQ5433E-AU_R2_006A1


MOSFETs 30V P-Channel Enhancement Mode MOSFET
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Panjit 2910
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AUD 0.6757
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75 A30 V8.4 mOhmsP - Channel 2.5 V- 55 C+ 175 C3.3 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 25 V , + 25 V54 nCEnhancementAEC - Q101 
SISS72DN-T1-GE3


MOSFET 150V Vds 20V Vgs PowerPAK 1212-8S
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Vishay 2910
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AUD 0.6776
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25.5 A150 V42 mOhmsN - Channel 2 V- 55 C+ 150 C65.8 WSmd/SmtPowerpak1212 - 8Cut TapeSi1 Channel20 V22 nCEnhancement Trenchfet, Thunderfet, Powerpak
SIR424DP-T1-GE3


N-Channel 20 V 30A (Tc) 4.8W (Ta), 41.7W (Tc) Surface Mount PowerPAK® SO-8
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Vishay 2910
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AUD 0.6785
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   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8ReelSi     Trenchfet, Powerpak
SI6954ADQ-T1-GE3


Vishay Semiconductors MOSFET Dual N-Ch MOSFET 30V 53mohm 10V
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Vishay 2910
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AUD 0.6837
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3.1 A30 V53 mOhmsN - Channel 1 V- 55 C+ 150 C830 mWSmd/SmtTSSOP - 8ReelSi 20 V8 nCEnhancement Trenchfet
RF9G120BJFRATCR


MOSFETs Pch -40V -12A, DFN2020Y7LSAA, Power MOSFET for Automotive
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ROHM 2910
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AUD 0.6865
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12 A40 V48 mOhmsP - Channel 2.5 V- 55 C+ 150 C23 WSMD/SMTDFN - 6Reel , Cut TapeSi1 Channel- 20 V , + 5 V15.5 nCEnhancement  
RQ3G120BJFRATCB


MOSFETs Pch -40V -12A, HSMT8AG, Power MOSFET for Automotive
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ROHM 2910
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AUD 0.6865
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12 A40 V48 mOhmsP - Channel 2.5 V- 55 C+ 150 C40 WSMD/SMTH SMT - 8Reel , Cut TapeSi1 Channel- 20 V , + 5 V15.5 nCEnhancement  
RF4E070BNTR


ROHM Semiconductor MOSFET 4.5V Drive Nch MOSFET
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ROHM 2910
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AUD 0.6895
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7 A30 V28.6 mOhmsN - Channel 2 V- 55 C+ 150 C2 WSmd/SmtDFN2020 - 8ReelSi1 Channel20 V8.9 nC   
TPCA8131,LQ(S


30V 27W 1 Piece P-Channel SOP-8-Advance(5x6) MOSFETs ROHS
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Toshiba 2910
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AUD 0.6921
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RQ3L120BJFRATCB


MOSFETs Pch -60V -12A, HSMT8AG, Power MOSFET for Automotive
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ROHM 2910
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AUD 0.6935
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12 A60 V106 mOhmsP - Channel 2.5 V- 55 C+ 150 C40 WSMD/SMTH SMT - 8Reel , Cut TapeSi1 Channel- 20 V , + 5 V15.7 nCEnhancement  
SIR410DP-T1-GE3


MOSFET 20V Vds 20V Vgs PowerPAK SO-8
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Vishay 2910
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AUD 0.696
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   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8ReelSi     Trenchfet, Powerpak
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