MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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First...741742743744745...
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDMC8015L


MOSFET 40V N-Channel PowerTrench MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 2910
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AUD 0.5931
Multiples of: 3000

7 A40 V26 mOhmsn - channel   + 150 C24 Wsmd/smtMLP 3.3 x 3.3Reelsi1 channel 6.6 nC , 13.6 nC   
AP3C023AMT


PMPAK-5x6 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

APEC 2910
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AUD 0.5998
Multiples of: 1

                   
FDMA530PZ


Transistor: P-MOSFET; unipolar; -30V; -6.8A; 2.4W; MicroFET
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ON Semiconductor 2910
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AUD 0.6159
Multiples of: 3000

   P Channel               
PJQ5526-AU_R2_002A1


MOSFETs 30V N-Channel (LL) SGT MOSFET
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Panjit 2910
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AUD 0.6233
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73 A30 V5 mOhmsN - Channel 2.5 V- 55 C+ 175 C43 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V15 nCEnhancementAEC - Q101 
SIA421DJ-T1-GE3


MOSFET 30V 12A 19W 35mohm @ 10V
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Vishay 2910
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AUD 0.6302
Multiples of: 3000

   P - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SC - 70 - 6LReel       
TT8M3TR


ROHM Semiconductor MOSFET
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ROHM 2910
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AUD 0.6389
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2.5 A , 2.4 A20 v , - 20 V140 mOhms , 360 mOhmsN - Channel, P - Channel 300 mV , - 300 mV- 55 C+ 150 C1.25 WSmd/SmtTSST - 8ReelSi2 Channel+/- 10 v , +/- 10 V3.6 nC , 6.7 nCEnhancement  
BSP122,115


N-Channel 200 V 550mA (Ta) 1.5W (Ta) Surface Mount SOT-223
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Nexperia 2910
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AUD 0.6534
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 223Reel       
DMN1250UFEL-7


MOSFET 8 N-Ch FET 4.5V 280mOhm 12Vdss
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Diodes Incorporated 2910
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AUD 0.6571
Multiples of: 1

   N - Channel     Smd/SmtU - QFN1515 - 12Cut TapeSi1 Channel     
FDC3512


MOSFET 80V N-Ch PowerTrench
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ON Semiconductor 2231
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AUD 0.646
Multiples of: 1

3 A80 V77 mOhmsN - Channel  - 55 C+ 150 C1.6 WSmd/SmtSSOT - 6ReelSi1 Channel20 V Enhancement Powertrench
Si7223DN-T1-GE3


MOSFET -30V Vds 20V Vgs PowerPAK 1212-8
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Vishay 0
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AUD 0.654
Multiples of: 3000

6 A30 V26.4 mOhmsP - Channel 1 V- 55 C+ 150 C23 WSmd/SmtPOWERPAK - 1212 - 8Cut TapeSi2 Channel- 10 V26.3 nCEnhancement  
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First...741742743744745...

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