MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WMB175N10LG4


Transistor: N-MOSFET; unipolar; PDFN5060-8
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Wayon 2910
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AUD 0.4751
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ZVP4525E6TA


P-Channel 250 V 197mA (Ta) 1.1W (Ta) Surface Mount SOT-23-6
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Diodes Incorporated 2910
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AUD 0.4708
Multiples of: 3000

197 mA250 V14 OhmsP - channel 2 V- 55 C+ 150 C1.1 WSmd/smtSOT - 23 - 6ReelSi1 Channel40 V2.45 nCEnhancement  
RSQ045N03TR


ROHM Semiconductor MOSFET N-CH 30V 4.5A TSMT6
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ROHM 2910
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AUD 0.4784
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4.5 A30 V27 mOhmsn - channel  - 55 C+ 150 C1.25 Wsmd/smtT SMT - 6Reelsi1 channel20 V enhancement  
QH8ME5TCR


MOSFETs 100V 2A, Dual Nch+Pch, TSMT8, Power MOSFET : QH8ME5 is a low on-resistance MOSFET ideal for Switching applications.
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ROHM 2910
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AUD 0.4818
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2 A100 V202 mOhms , 270 mOhmsN - Channel, P - Channel 2.5 V- 55 C+ 150 C1.5 WSMD/SMTT SMT - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V2.8 nC , 19.7 nCEnhancement  
FDMC7200S


MOSFET DUAL N-CH. ER TRENCH MO
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ON Semiconductor 2910
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AUD 0.4883
Multiples of: 3000

18 A , 13 A30 V22 mOhms , 10 mOhmsn - channel20 V    smd/smtPOWER 33 - 8Reelsi2 channel20 V   powertrench
DMC1028UFDB-7


Diodes Incorporated MOSFET N-Ch 12VDss 8Vgss P-Ch 8Vdss 8Vgss
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Diodes Incorporated 2910
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AUD 0.4813
Multiples of: 3000

6 A , 3.4 A12 v , 20 V17 mOhms , 55 mOhmsN - Channel, P - Channel 400 mV , 1 V- 55 C+ 150 C1.36 WSmd/SmtDFN1612 - 6Tape And ReelSi2 Channel8 V18.5 nC , 11.5 nCEnhancement  
PJQ5437E-AU_R2_006A1


MOSFETs 30V P-Channel Enhancement Mode MOSFET
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Panjit 2910
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AUD 0.5011
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42 A30 V15 mOhmsP - Channel 2.5 V- 55 C+ 175 C21 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 25 V , + 25 V32 nCEnhancementAEC - Q101 
PJQ5534-AU_R2_002A1


MOSFETs 30V N-Channel (LL) SGT MOSFET
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Panjit 2910
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AUD 0.5029
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39 A30 V9.3 mOhmsN - Channel 2.5 V- 55 C+ 175 C23 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V9.5 nCEnhancementAEC - Q101 
RQ6P020ATTCR


MOSFETs RQ6P020AT is a low on-resistance MOSFET suitable for Switching, Load switch.
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ROHM 2910
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AUD 0.5077
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           Reel , Cut TapeSi      
HSBA6256


60V 50A 50W 10m@10V,15A 2.3V@250uA 2 N-Channel PRPAK-8(5x6) MOSFETs ROHS
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HUASHUO 2910
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AUD 0.5094
Multiples of: 1

                   
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First...741742743744745...

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