MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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First...746747748749750...
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQJ454EP-T1_GE3


MOSFET 200V Vds PowerPAK AEC-Q101 Qualified
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Vishay 2910
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AUD 0.7032
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13 A200 V145 mOhmsN - Channel 2 V- 55 C+ 175 C68 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel20 V56 nC Aec - Q101Trenchfet
IRFH5250TRPBF


Transistor: N-MOSFET; unipolar; 25V; 45A; 3.6W; PQFN5X6
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Infineon 2910
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AUD 0.7177
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100 A25 V1.15 mOhmsN - Channel    3.6 WSmd/SmtPQFN - 8ReelSi1 Channel20 V52 nC   
IRFR014TRLPBF-BE3


N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-PAK (TO-252AA)
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Vishay 2910
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AUD 0.7206
Multiples of: 3000

7.7 A60 V200 mOhmsN - Channel 4 V- 55 C+ 150 C2.5 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V11 nCEnhancement  
IRLR2905ZTRLPBF


Trans MOSFET N-CH 55V 60A 3-Pin(2+Tab) DPAK T/R
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Infineon 2910
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AUD 0.724
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60 A55 V13.5 mOhmsN - Channel 3 V + 175 C110 WSmd/SmtDPAKReelSi1 Channel 35 nC   
TPN6R003NL,LQ


N-Channel 30 V 27A (Tc) 700mW (Ta), 32W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
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Toshiba 2910
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AUD 0.7249
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56 A30 V6.8 mOhmsn - channel20 V2.3 V- 55 C+ 150 C32 Wsmd/smtTSON - 8Reelsi1 channel20 V17 nCenhancement  
RQ3L120BKFRATCB


MOSFETs Nch 60V 12A, HSMT8AG, Power MOSFET for Automotive
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ROHM 2910
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AUD 0.7274
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12 A60 V30 mOhmsN - Channel 2.5 V- 55 C+ 150 C40 WSMD/SMTH SMT - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V7.3 nCEnhancement  
P16B6SB-5071


Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 16A; Idm: 48A; 20W
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Shindengen 2910
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AUD 0.7311
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            EETMOS3      
SQJA62EP-T1_GE3


MOSFET N-Channel 60V PowerPAK SO-8L
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Vishay 2910
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AUD 0.7383
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75 A60 V3.7 mOhmsN - Channel 1.5 V- 55 C+ 175 C68 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel20 V85 nCEnhancementAec - Q101Trenchfet
IRLR120NTRLPBF


Transistor: N-MOSFET; unipolar; 100V; 11A; 39W; DPAK
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Infineon 2910
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AUD 0.7
Multiples of: 3000

11 A100 V265 mOhmsN - Channel    39 WSmd/SmtDPAKReelSi1 Channel16 V13.3 nC   
FDMS3669S


Fairchild Semiconductor MOSFET 30V Asymmetric Dual N-Channel Pwr Trench
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ON Semiconductor 2910
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AUD 0.778
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60 A30 V10 mOhmsN - Channel 2 V- 55 C+ 150 C2.5 WSmd/SmtPOWER - 56 - 8ReelSi2 Channel20 V34 nC  Power Stage Powertrench
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First...746747748749750...

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