MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
XSM6K336NW,LXHF


MOSFETs N-ch MOSFET, 30 V, 3.0 A, 0.095 ohm at 10V, DFN2020B(WF)
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Toshiba 2813
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AUD 0.2528
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3 A30 V95 mOhmsN - Channel 2.5 V + 150 C3.3 WSMD/SMTDFN - 6Reel , Cut TapeSi1 Channel20 V1.7 nCEnhancement  
AP4501AGEM


SOP-8 MOSFETs ROHS
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APEC 2813
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AUD 0.3117
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SQ2303ES-T1_GE3


MOSFET P-Channel 30V AEC-Q101 Qualified
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Vishay 2813
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AUD 0.3887
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2.5 A30 V170 mOhmsP - Channel 2.5 V- 55 C+ 175 C1.9 WSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 10 V , 10 V4.5 nCEnhancementAEC - Q101TrenchFET
RQ3N025ATTB1


MOSFETs Pch -80V -2.5A, HSMT8, Power MOSFET
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ROHM 2813
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AUD 0.4761
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7 A80 V240 mOhmsP - Channel 4 V- 55 C+ 150 C14 WSMD/SMTH SMT - 8Reel , Cut TapeSi1 Channel20 V13 nCEnhancement  
SSM6K504NU,LF(B


Trans MOSFET N-CH 30V 9A 6-Pin UDFN-B EP T/R
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Toshiba 2813
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AUD 0.4869
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FDMA530PZ


Transistor: P-MOSFET; unipolar; -30V; -6.8A; 2.4W; MicroFET
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ON Semiconductor 2813
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AUD 0.8308
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   P Channel               
RQ3L120BLFRATCB


MOSFETs HSMT N CHAN 60V
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ROHM 2813
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AUD 0.6846
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12 A60 V30 mOhmsN - Channel 4 V- 55 C+ 150 C40 WSMD/SMTH SMT - 8Reel , Cut TapeSi1 Channel20 V7.5 nCEnhancementAEC - Q101 
PJQ5568A-AU_R2_002A1


MOSFETs 60V N-Channel Enhancement Mode MOSFET
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Panjit 2813
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AUD 0.6863
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40 A60 V13.5 mOhmsN - Channel 3 V- 55 C+ 175 C43 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V16 nCEnhancementAEC - Q101 
RQ3N040ATTB1


MOSFETs HSMT8 P-CH 80V 10A
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ROHM 2813
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AUD 0.7142
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10 A80 V126 mOhmsP - Channel 4 V- 55 C+ 150 C15 WSMD/SMTH SMT - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V22 nCEnhancement  
FDC6303N-VB


20V 6A 2 N-Channel SOT23-6 MOSFETs ROHS
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VBsemi Elec 2793
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AUD 0.1965
Multiples of: 5

                   
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