MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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First...746747748749750...
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQJ402EP-T1_GE3


MOSFET 100V 32A 27watt AEC-Q101 Qualified
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Vishay 2910
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AUD 1.0179
Multiples of: 3000

32 A100 V11 mOhmsN - Channel 1.5 V- 55 C+ 175 C83 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel10 V34 nCEnhancementAec - Q101Trenchfet
STP4N62K3


MOSFET N-Ch 620V 1.8 ohm 3.8 A SuperMESH3
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STMicroelectronics 2910
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AUD 1.0353
Multiples of: 1

3.8 A620 V1.95 OhmsN - Channel3 V4.5 V + 150 C70 WThrough HoleTO - 220 - 3Tube   14 nC   
SQJ560EP-T1_GE3


MOSFET 60V Vds -/+20V Vgs PowerPAK SO-8L
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Vishay 2910
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AUD 1.0369
Multiples of: 3000

30 A , 18 A60 V12 mOhms , 52.6 mOhmsN - Channel, P - Channel 1.5 v , 2.5 V- 55 C+ 175 C34 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi2 Channel20 V30 nC , 45 nCEnhancement  
PSMN038-100YLX


N-Channel 100 V 30A (Tc) 94.9W (Tc) Surface Mount LFPAK56, Power-SO8
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Nexperia 2910
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AUD 1.0385
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30 A100 V37.5 mOhmsN - Channel20 V1.7 V- 55 C+ 175 C94.9 WSmd/SmtLFPAK56 - 4ReelSi1 Channel20 V21.6 nCEnhancement  
STD2NK90Z-1


MOSFET N-Ch, 900V-5ohms Zener SuperMESH 2.1A
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STMicroelectronics 2910
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AUD 1.0778
Multiples of: 3000

2.1 A900 V6.5 OhmsN - Channel30 V - 55 C+ 150 C70 WThrough HoleIPAK - 3TubeSi1 Channel30 V Enhancement Supermesh
STL45P3LLH6


MOSFET P-channel -30 V, 11 mOhm typ., -45 A STripFET H6 Power MOSFET in a PowerFLAT 5x6 package
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STMicroelectronics 2910
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AUD 1.0914
Multiples of: 1

45 A30 V11 mOhmsP - Channel 1 V- 55 C+ 175 C4.8 WSmd/SmtPowerflat - 5X6 - 8Cut TapeSi1 Channel20 V24 nCEnhancement Stripfet
PJQ5544V-AU_R2_002A1


MOSFETs 40V N-Channel Enhancement Mode MOSFET
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Panjit 2910
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AUD 1.1077
Multiples of: 1

120 A40 V3.6 mOhmsN - Channel 3.5 V- 55 C+ 175 C94 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V34 nCEnhancementAEC - Q101 
PJQ5839E-AU_R2_002A1


MOSFETs 30V Dual P-Channel Enhancement Mode MOSFET
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Panjit 2910
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AUD 1.1077
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31 A30 V30.7 mOhmsP - Channel 2.5 V- 55 C+ 175 C30 WSMD/SMTTO - 252AA - 3Reel , Cut TapeSi1 Channel- 25 V , + 25 V22 nCEnhancementAEC - Q101 
RH6N040BHTB1


MOSFETs Nch 80V 40A, HSMT8, Power MOSFET
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ROHM 2910
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AUD 1.1175
Multiples of: 1

65 A80 V8.3 mOhmsN - Channel 4 V- 55 C+ 150 C59 WSMD/SMTH SMT - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V23 nCEnhancement  
SI7139DP-T1-GE3


MOSFET -30V Vds 20V Vgs PowerPAK SO-8
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Vishay 2910
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AUD 1.1198
Multiples of: 3000

40 A30 V5.5 mOhmsP - Channel 1.2 V- 55 C+ 150 C48 WSmd/SmtPOWERPAK SO - 8ReelSi1 Channel- 10 V97 nCEnhancement Trenchfet
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First...746747748749750...

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