MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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First...746747748749750...
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTTFD1D8N02P1E


MOSFETs FET 25V 1.8 MOHM PC33 DUAL
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ON Semiconductor 2910
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AUD 1.1469
Multiples of: 1

61 A , 126 A25 V , 25 V1.4 mOhms , 4.2 mOhmsN - Channel 2 V , 2 V- 55 C+ 150 C25 W , 36 WSMD/SMTPQFN - 8Reel , Cut TapeSi1 Channel- 12 V , + 16 V12 nC , 37.5 nCEnhancement  
SIJ478DP-T1-GE3


N-Channel 80 V 60A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8
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Vishay 2910
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AUD 1.1544
Multiples of: 3000

60 A80 V8 mOhmsN - Channel 2.6 V- 55 C+ 150 C62.5 WSmd/SmtSO - 8ReelSi1 Channel20 V35.5 nCEnhancement Thunderfet Trenchfet
PJQ5568A-AU_R2_002A1


MOSFETs 60V N-Channel Enhancement Mode MOSFET
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Panjit 2910
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AUD 1.1995
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40 A60 V13.5 mOhmsN - Channel 3 V- 55 C+ 175 C43 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V16 nCEnhancementAEC - Q101 
PJD50N04V-AU_L2_002A1


MOSFETs 40V N-Channel Enhancement Mode MOSFET
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Panjit 2910
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AUD 1.1995
Multiples of: 1

80 A40 V5.9 mOhmsN - Channel 3.5 V- 55 C+ 175 C68 WSMD/SMTTO - 252AA - 2Reel , Cut TapeSi1 Channel- 20 V , + 20 V23 nCEnhancementAEC - Q101 
PJD95P04E-AU_L2_006A1


MOSFETs 40V P-Channel Enhancement Mode MOSFET
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Panjit 2910
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AUD 1.1995
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           Reel , Cut TapeSi    AEC - Q101 
IRFR9024TRLPBF


Vishay Semiconductors MOSFET P-Chan 60V 8.8 Amp
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Vishay 2910
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AUD 1.2187
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8.8 A- 60 V280 mOhmsP - Channel20 V - 55 C+ 150 C2.5 WSmd/SmtDPAK - 3ReelSi   Enhancement  
NTMFD1D6N03P8


MOSFETs PT8 N-CH DUAL 30V
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ON Semiconductor 2910
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AUD 1.2222
Multiples of: 1

           Reel , Cut TapeSi      
SIR622DP-T1-GE3


MOSFET N-Ch 150V Vds 20.7nC Qg Typ
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Vishay 2910
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AUD 1.2525
Multiples of: 3000

          POWERPAK - SO - 8Cut TapeSi      
PJQ5542V-AU_R2_002A1


MOSFETs 40V N-Channel Enhancement Mode MOSFET
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Panjit 2910
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AUD 1.2572
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136 A40 V3 mOhmsN - Channel 3.5 V- 55 C+ 175 C100 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V43 nCEnhancementAEC - Q101 
STL140N4F7AG


MOSFET LGS LV MOSFET
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STMicroelectronics 0
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AUD 1.1976
Multiples of: 3000

120 A40 V2.1 mOhmsn - channel 2 V- 55 C+ 175 C111 Wsmd/smtPowerflat - 8Reelsi1 channel+/- 20 V29 nCenhancementaec - q101stripfet
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First...746747748749750...

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