MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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First...746747748749750...
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPA60R380P6XKSA1


Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
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Infineon 2958
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AUD 1.0168
Multiples of: 500

            coolmos p6      
SIHH085N60EF-T1GE3


MOSFETs N-CHANNEL 600V
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Vishay 2890
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AUD 6.2224
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30 A600 V850 mOhmsN - Channel 5 V- 55 C+ 150 C184 WSMD/SMTPOWERPAK - 5 Si1 Channel- 30 V , + 30 V42 nCEnhancement  
IRLR7843TRPBF


MOSFET N Trench 30V 161A (Tc) 2.3V @ 250uA 3.3 mΩ @ 15A,10V DPAK RoHS
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Infineon 2813
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AUD 0.8136
Multiples of: 1

161 A30 V3.2 mOhmsN - Channel 2.3 V- 55 C+ 175 C140 WSmd/SmtDPAKReelSi1 Channel20 V34 nCEnhancement  
NTMFS08N003C


MOSFET PTNG 80/20V IN 5X6CLIP
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ON Semiconductor 2813
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AUD 2.2724
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           Cut Tape       
FDMS86500DC


MOSFET 60V/20V NCh DualCool PowerTrench MOSFET
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ON Semiconductor 2813
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AUD 3.195
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29 A60 V2.3 mOhmsN - Channel  - 55 C+ 150 C125 WSmd/SmtDUALCOOL - 56 - 8Cut TapeSi1 Channel20 V76 nC   
STL16N65M5


MOSFET N-Ch 650V 0.27 Ohm 12A Mdmesh V
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STMicroelectronics 2813
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AUD 3.9155
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12 A650 V299 mOhmsN - Channel  - 55 C+ 150 C90 WSmd/SmtPowerflat 8 x 8 HVReelSi1 Channel25 V    
WM03DN06D


Transistor: N-MOSFET x2; unipolar; SOT363
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Wayon 2812
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AUD 0.0752
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NVMFS4C05NWFT1G


ON Semiconductor MOSFET
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ON Semiconductor 2811
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AUD 1.1969
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116 A30 V3.4 mOhmsn - channel 2.2 V- 55 C+ 175 C3.61 Wsmd/smtSO - 8FLReelsi1 channel20 V30 nC aec - q101 
SQJ120EP-T1_GE3


MOSFETs N-CHANNEL 30-V (D-S) 175C MOSFET
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Vishay 2810
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AUD 0.7782
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202 A30 V1.8 mOhmsN - Channel 3 V- 55 C+ 175 C130 WSMD/SMTSO - 8L Si1 Channel- 20 V , + 20 V58 nC   
IRF620PBF-BE3


N-Channel 200V 5.2A (Tc) 50W (Tc) Through Hole TO-220AB
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Vishay 2800
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AUD 0.7125
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5.2 A200 V800 mOhmsN - Channel 4 V- 55 C+ 150 C50 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V14 nCEnhancement  
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First...746747748749750...

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