MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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First...746747748749750...
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDMS8333LN


MOSFETs FET 40V 3.1 MOHM PQFN56
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ON Semiconductor 2910
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AUD 0.7785
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76 A40 V3.1 mOhmsN - Channel 3 V- 55 C+ 150 C69 WSMD/SMTPOWER 56 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V46 nCEnhancement  
SIZ200DT-T1-GE3


MOSFET 30V Vds 20/-16V Vgs PowerPAIR 3x3S
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Vishay 2910
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AUD 0.789
Multiples of: 3000

61 A , 60 A30 V5.5 mOhms , 5.8 mOhmsN - Channel 1.1 V- 55 C+ 150 C33 WSmd/SmtPowerpair - 3X3S - 8Cut TapeSi2 Channel20 v , - 16 V28 nC , 30 nCEnhancement Trenchfet
STL8P4LLF6


MOSFET P-channel 40 V, 0.0175 Ohm typ., 8 A STripFET F6 Power MOSFET in a PowerFLAT 3.3 x 3.3 package
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STMicroelectronics 2910
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AUD 0.7885
Multiples of: 3000

8 A40 V20.5 mOhmsP - Channel 1 v to 2.5 V- 55 C+ 150 C2.9 WSmd/SmtPowerflat - 8Cut Tape-1 Channel+/- 20 V22 nCEnhancement Stripfet
IRFU3410PBF


MOSFET MOSFT 100V 31A 39mOhm 37nC
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Infineon 2910
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AUD 0.7917
Multiples of: 3000

31 A100 V39 mOhmsN - Channel    110 WThrough HoleIPAKTubeSi1 Channel20 V37 nC   
SQS407ENW-T1_GE3


MOSFET -30V Vds 20V Vgs PowerPAK 1212-8W
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Vishay 2910
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AUD 0.8051
Multiples of: 1

16 A30 V10.8 mOhmsP - Channel 1.5 V- 55 C+ 175 C62.5 WSmd/SmtPOWERPAK - 1212 - 8WCut TapeSi1 Channel20 V77 nCEnhancement  
SI6562CDQ-T1-GE3


MOSFET 20V 6.7/6.1A 22/30mohm @ 4.5V
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Vishay 2910
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AUD 0.8135
Multiples of: 3000

6.7 A , 6.1 A20 V22 mOhms , 30 mOhmsN And P - Channel 600 mV- 55 C+ 150 C1.6 w , 1.7 WSmd/SmtTSSOP - 8ReelSi2 Channel4.5 v , - 4.5 V15 nC , 34 nCEnhancement Trenchfet
SIS407DN-T1-GE3


MOSFET -20V Vds 8V Vgs PowerPAK 1212-8
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Vishay 2910
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AUD 0.8284
Multiples of: 1

25 A20 V9.5 mOhmsP - Channel 400 mV- 55 C+ 150 C33 WSmd/SmtPOWERPAK 1212 - 8ReelSi1 Channel4.5 V38 nCEnhancement Trenchfet, Powerpak
PJQ5948V-AU_R2_002A1


MOSFETs 40V Dual N-Channel Enhancement Mode MOSFET
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Panjit 2910
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AUD 0.8308
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35 A40 V13.4 mOhmsN - Channel 3.5 V- 55 C+ 175 C32 WSMD/SMTDFN - 5060B - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V9.5 nCEnhancementAEC - Q101 
STL40DN3LLH5


MOSFET Dual N-Ch 30V 11A 0.016 Ohm STripFET V
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STMicroelectronics 2910
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AUD 0.83
Multiples of: 3000

40 A30 V16 mOhmsN - Channel 1.5 V  60 WSmd/SmtPowerflat 5X6ReelSi2 Channel22 V4.5 nC Aec - Q101Stripfet
AGM12T05A


120V 100A 150W 5.5m@10V,20A 2.5V@250uA 1PCSNChannel DFN(5x6) MOSFETs ROHS
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AGM-Semi 2910
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AUD 0.8451
Multiples of: 1

                   
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