MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BUK9Y11-80EX


MOSFET N-channel 80 V 11 mo FET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Nexperia 2828
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AUD 0.9621
Multiples of: 1

84 A80 V8.1 mOhmsN - Channel 1.7 V- 55 C+ 175 C194 WSmd/SmtLFPAK56 - 5ReelSi1 Channel15 V44.2 nCEnhancement  
LWN2H550AD2


DFN-6L(2x2) MOSFETs ROHS
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Lewa Micro 2827
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AUD 0.1034
Multiples of: 5

                   
TM4559AS


SOP-8 MOSFETs ROHS
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Tritech-MOS 2827
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AUD 0.247
Multiples of: 5

                   
SI3456DDV-T1-GE3-VB


30V 6A 2.5W 23mΩ@10V,5.5A N Channel TSOP-6 MOSFETs ROHS
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VBsemi Elec 2827
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AUD 0.1965
Multiples of: 5

                   
AP9575GH


TO-252 MOSFETs ROHS
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APEC 2827
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AUD 0.3629
Multiples of: 5

                   
BUK9Y14-40B,115


N-Channel 40 V 56A (Tc) 85W (Tc) Surface Mount LFPAK56, Power-SO8
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Nexperia 2827
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AUD 0.5566
Multiples of: 1

56 A40 V14 mOhmsN - Channel 2.3 V- 55 C+ 175 C85 WSmd/SmtSOT - 669ReelSi1 Channel15 V21 nCEnhancement  
IPB320N20N3 G


MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3
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Infineon 2827
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AUD 2.1179
Multiples of: 1

34 A200 V28 mOhmsN - Channel 2 V- 55 C+ 175 C136 WSmd/SmtTO - 263 - 3ReelSi1 Channel20 V29 nCEnhancement Optimos
SIZF918BDT-T1-GE3


MOSFETs DUAL N-CH 30-V (D-S) MOSFET W/SCHOTTKY
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Vishay 2826
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AUD 1.2084
Multiples of: 1

73 A , 158 A30 V1.4 mOhms , 3.3 mOhmsN - Channel 2.2 V- 55 C+ 150 C26.6 W , 60 WSMD/SMTPowerpair 6X5F Si2 Channel- 16 V , + 20 V , - 12 V , + 16 V19 nC , 51 nCEnhancement  
STU11N65M2


STMicroelectronics MOSFET
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STMicroelectronics 2826
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AUD 1.2954
Multiples of: 1

7 A650 V670 mOhmsn - channel 3 V- 55 C+ 150 C85 Wthrough holeIPAK - 3Tubesi1 channel25 V12.5 nC  mdmesh ii plus
IRFU9214PBF


MOSFET P-Chan 250V 2.7 Amp
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Vishay 2426
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AUD 1.1066
Multiples of: 1

   P - Channel  - 55 C+ 150 C Through HoleIPAKTubeSi      
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