MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDC645N


Fairchild Semiconductor MOSFET SSOT-6 N-CH
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ON Semiconductor 2910
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AUD 0.4423
Multiples of: 3000

5.5 A30 V30 mOhmsN - Channel12 V - 55 C+ 150 C1.6 WSmd/SmtSSOT - 6ReelSi1 Channel12 V Enhancement Powertrench
CRTT032N06N


TO-220 MOSFETs ROHS
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CRMICRO 2910
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AUD 0.4487
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SQ3426AEEV-T1_GE3


MOSFET 60V Vds -/+20V Vgs AEC-Q101 Qualified
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Vishay 2910
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AUD 0.4534
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7 A60 V32 mOhmsN - Channel 1.5 V- 55 C+ 175 C5 WSmd/SmtTSOP - 6ReelSi1 Channel20 V14 nCEnhancementAec - Q101Trenchfet
PJQ5439E-AU_R2_006A1


MOSFETs 30V P-Channel Enhancement Mode MOSFET
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Panjit 2910
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AUD 0.4575
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33 A30 V18.8 mOhmsP - Channel 2.5 V- 55 C+ 175 C33 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 25 V , + 25 V22 nCEnhancementAEC - Q101 
SQJ476EP-T1_GE3


MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified
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Vishay 2910
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AUD 0.4585
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23 A100 V30 mOhmsN - Channel 1.5 V- 55 C+ 175 C45 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel20 V20 nCEnhancementAec - Q101Trenchfet
TT8J21TR


ROHM Semiconductor MOSFET P Chan-20V-2.5A Mid-PowerSwitching
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ROHM 2910
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AUD 0.4587
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2.5 A- 20 V68 mOhmsP - Channel10 V - 55 C+ 150 C1.25 WSmd/SmtTSST - 8ReelSi2 Channel10 V Enhancement  
FDMA1024NZ


MOSFET 20V Dual N-Channel PowerTrench
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ON Semiconductor 2910
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AUD 0.4671
Multiples of: 3000

5 A20 V54 mOhmsN - Channel  - 55 C+ 150 C1.4 WSmd/SmtMICRO - FET - 6ReelSi2 Channel8 V Enhancement Powertrench
FDC6318P


Transistor: P-MOSFET x2; unipolar; -12V; -2.5A; 0.96W; SuperSOT-6
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ON Semiconductor 2910
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AUD 0.4716
Multiples of: 3000

            Powertrench®      
DMG7401SFG-13


Diodes Incorporated MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 3K
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Diodes Incorporated 2910
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AUD 0.4729
Multiples of: 1

9.8 A30 V25 mOhmsP - Channel 3 V- 55 C+ 150 C940 mWSmd/SmtPowerdi3333 - 8ReelSi 25 V58 nCEnhancement  
SIA429DJT-T1-GE3


MOSFET -20V Vds 8V Vgs Thin PowerPAK SC-70
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Vishay 2910
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AUD 0.473
Multiples of: 3000

12 A20 V20.5 mOhmsP - Channel 1 V- 55 C+ 150 C3.5 WSmd/SmtSC - 70ReelSi1 Channel8 V62 nC  Trenchfet, Powerpak
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