MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TPZXMP3A13FTA


SOT-23 MOSFETs ROHS
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TECH PUBLIC 45541
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AUD 0.0619
Multiples of: 10

                   
2N7002AKRA-QZ


MOSFETs 60 V, dual N-channel Trench MOSFET
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Nexperia 2865
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AUD 0.0804
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320 mA60 V2.9 OhmsN - Channel 2.6 V- 55 C+ 150 C5 WSMD/SMTDFN1412 - 6 - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V210 pCEnhancement  
HS8K1TB


MOSFET 30V NCH+NCH POWER
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ROHM 2865
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AUD 0.5333
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11 A30 V11.8 mOhmsN - Channel 1.2 V- 55 C+ 150 C2 WSmd/SmtHsml3030l - 10Cut TapeSi2 Channel20 V6 nC , 7.4 nCEnhancement  
NVGS4111PT1G


MOSFET PFET TSOP6 30V 4.7A 60MOH
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ON Semiconductor 2864
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AUD 0.4334
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         Smd/SmtTSOP - 6Cut TapeSi    Aec - Q101 
QS5U16TR


ROHM Semiconductor MOSFET N-CH 30V 2A
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ROHM 2863
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AUD 0.3645
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2 A30 V100 mOhmsN - Channel  - 40 C+ 125 C1.25 WSmd/SmtT SMT - 5ReelSi1 Channel12 V Enhancement  
PJQ5431E-AU_R2_006A1


MOSFETs 30V P-Channel Enhancement Mode MOSFET
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Panjit 2863
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AUD 0.7421
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86 A30 V6.4 mOhmsP - Channel 2.5 V- 55 C+ 175 C75 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 25 V , + 25 V68 nCEnhancementAEC - Q101 
STU12N60M2


MOSFET N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in IPAK package
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STMicroelectronics 2862
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AUD 1.1427
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   n - channel     through holeTO - 251 - 3 si1 channel    mdmesh
SIR680LDP-T1-RE3


N-Channel 80V 31.8A (Ta), 130A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
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Vishay 2861
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AUD 1.5466
Multiples of: 1

          Powerpak® SO - 8Cut Tape (Ct)Mosfet (Metal Oxide)      
RK7002BMT116-HXY


60V 300mA 2Ω@10V,0.3A 350mW 1.9V null SOT-23 MOSFETs ROHS
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HXY MOS 2861
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AUD 0.0097
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BSS123(UMW)


SOT-23 MOSFETs ROHS
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Youtai 2861
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AUD 0.0145
Multiples of: 50

                   
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