MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HSCA2030


MOSFET DoubleNChannelCommon Drain -20V 56A 1V @ 250uA 5.8mΩ @ 3A,4.5V DFN3*3 RoHS
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HUASHUO 2851
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AUD 0.2722
Multiples of: 5

                   
UT3415G-AE3-R


SOT-23 MOSFETs ROHS
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Unisonic 2837
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AUD 0.11
Multiples of: 5

                   
FS4822


30V 8A 2 N-Channel SOP-8 MOSFETs ROHS
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FOSAN 2837
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AUD 0.1672
Multiples of: 5

                   
DMP6110SSS-13


MOSFET 60V P-Ch 60Vds 20Vgs FET 1030pF 19.4nC
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Diodes Incorporated 2837
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AUD 0.4554
Multiples of: 5

- 4.5 A- 60 V98 mOhmsP - Channel20 V- 3 V- 55 C+ 150 C2 WSmd/SmtSO - 8ReelSi1 Channel20 V9.5 nCEnhancement  
PJQ5839E-AU_R2_002A1


MOSFETs 30V Dual P-Channel Enhancement Mode MOSFET
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Panjit 2837
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AUD 1.0458
Multiples of: 1

31 A30 V30.7 mOhmsP - Channel 2.5 V- 55 C+ 175 C30 WSMD/SMTTO - 252AA - 3Reel , Cut TapeSi1 Channel- 25 V , + 25 V22 nCEnhancementAEC - Q101 
SIRS570DPW-T1-RE3


MOSFETs N-CHANNEL 150-V (D-S) MOSFET
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Vishay 2813
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AUD 1.9373
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IXFH26N50P


N-Channel 500 V 26A (Tc) 400W (Tc) Through Hole TO-247AD (IXFH)
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IXYS 2792
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AUD 8.3075
Multiples of: 1

26 A500 V230 mOhmsN - Channel  - 55 C+ 150 C400 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V Enhancement Hiperfet
FS4612


60V 1PCSN-Channel&1PCSP-Channel SOP-8 MOSFETs ROHS
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FOSAN 2740
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AUD 0.2396
Multiples of: 5

                   
AP90N04K


40V 80A 4.2mΩ@20V,80A null TO-252-2 MOSFETs ROHS
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Quan Li 2167
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AUD 0.3707
Multiples of: 5

                   
SIHFR220TRL-GE3


MOSFETs
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Vishay 0
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AUD 0.7899
Multiples of: 1

                   
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