MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WMQ80N03T1


Transistor: N-MOSFET; unipolar; PDFN3030-8
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Wayon 2910
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AUD 0.3764
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FDC638P


Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
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ON Semiconductor 2910
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AUD 0.3776
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            Powertrench®      
RF6E065BNTCR


MOSFET NCH 30V 6.5A MIDDLE POWER
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ROHM 2910
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AUD 0.3779
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6.5 A30 V15.3 mOhmsN - Channel 1 V- 55 C+ 150 C1 WSmd/SmtSOT - 363T - 6Cut TapeSi1 Channel20 V16.3 nCEnhancement  
ECH8697R-TL-W


MOSFET NCH 2.5V COMMON-DRAIN
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ON Semiconductor 2910
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AUD 0.381
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10 A24 V11.6 mOhmsN - Channel12.5 V - 55 C+ 150 C1.6 WSmd/SmtSOT - 28 - 8ReelSi2 Channel12.5 V6 nC   
RSE002P03TL


MOSFET P-CH 30V 200MA SOT416
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ROHM 2910
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AUD 0.3855
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200 mA30 V1.6 OhmsP - Channel    150 mWSmd/SmtUMT - 3ReelSi1 Channel20 V Enhancement  
SI8425DB-T1-E1


MOSFET -20V 23mOhm@4.5V 9.3A P-Ch G-III
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Vishay 2910
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AUD 0.3889
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   P - Channel     Smd/SmtMICRO - FOOT 1.6 x 1.6ReelSi     Microfoot Trenchfet
SI3459BDV-T1-E3


Vishay Semiconductors MOSFET 60V 2.9A 3.3W 216mohm 10V
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Vishay 2910
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AUD 0.3968
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2.2 A- 60 V216 mOhmsP - Channel20 V - 55 C+ 150 C2 WSmd/SmtTSOP - 6Reel    Enhancement  
SI3552DV-T1-E3


Mosfet Array N and P-Channel 30V 2.5A 1.15W Surface Mount 6-TSOP
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Vishay 2910
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AUD 0.3968
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   N And P - Channel  - 55 C+ 150 C Smd/SmtTSOP - 6Reel      Trenchfet
QH8KA1TCR


MOSFET 30V Nch+Nch Si MOSFET
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ROHM 0
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AUD 0.3492
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4.5 A30 V56 mOhms , 56 mOhmsN - Channel 1 V + 150 C2.4 WSmd/SmtT SMT - 8Cut TapeSi2 Channel20 V3 nC , 3 nCEnhancement  
SQS414CENW-T1_BE3


MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET
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Vishay 0
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AUD 0.3929
Multiples of: 1

                   
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