MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HSBA4206


40V 35A 21W 8.5m@10V,12A 2.5V@250uA 2 N-Channel PRPAK-8(5x6) MOSFETs ROHS
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HUASHUO 2910
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AUD 0.3471
Multiples of: 5

                   
HSCE1218


DFN-8(3.3x3.3) MOSFETs ROHS
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HUASHUO 2910
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AUD 0.3519
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DMN2023UCB4-7


MOSFET N-Ch 24Vds 12Vgs 6.0A Enh FET 2564pF
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Diodes Incorporated 2910
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AUD 0.3562
Multiples of: 1

6 A24 V27 mOhmsN - Channel12 V1.3 V- 55 C+ 150 C1.45 WSmd/SmtX1 - WLB1818 - 4ReelSi1 Channel12 V29 nCEnhancement  
SIR172ADP-T1-GE3


MOSFET 30V Vds 20V Vgs PowerPAK SO-8
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Vishay 2910
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AUD 0.3591
Multiples of: 3000

24 A30 V8.5 mOhmsN - Channel20 V2.4 V- 55 C+ 150 C29.8 WSmd/SmtPOWERPAK SO - 8ReelSi  29 nC  Trenchfet, Powerpak
DMN66D0LDW-7


SOT-363-6 MOSFETs ROHS
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Diodes Incorporated 2910
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AUD 0.3592
Multiples of: 1

115 mA60 V6 Ohmsn - channel  - 55 C+ 150 C250 mWsmd/smtSOT - 363 - 6Reelsi2 channel20 V enhancement  
SI8851EDB-T2-E1


P-Channel 20 V 7.7A (Ta) 660mW (Ta) Surface Mount Power Micro Foot® (2.4x2)
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Vishay 2910
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AUD 0.3597
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16.7 A20 V0.008 OhmsP - Channel8 V1 V- 55 C+ 150 C3.1 WSmd/SmtMICRO - FOOT2.4 x 2 - 30ReelSi1 Channel8 V70 nCEnhancement Trenchfet
RSR015P06HZGTL


MOSFET PCH -60V -1.5A SMALL SIGNAL MO
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ROHM 2910
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AUD 0.3614
Multiples of: 1

1.5 A60 V280 mOhmsP - Channel - 3 V- 55 C+ 150 C1 WSmd/SmtSC - 96 - 3Cut TapeSi1 Channel20 V10 nCEnhancementAec - Q101 
RQ5P035BGTCL


MOSFETs 100V 3.5A TSMT3, Power MOSFET
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ROHM 2910
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AUD 0.3674
Multiples of: 1

3.5 A100 V60 mOhmsN - Channel 2.5 V- 55 C+ 150 C1 WSMD/SMTSC - 96 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V6.7 nCEnhancement  
MDT40P10D


TO-252 MOSFETs ROHS
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Minos 2910
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AUD 0.3703
Multiples of: 5

                   
SIA519EDJ-T1-GE3


Mosfet Array N and P-Channel 20V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual
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Vishay 722
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AUD 0.4146
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4.5 A20 V40 mOhms , 90 mOhmsN And P - Channel 600 mV , 500 mV- 55 C+ 150 C7.8 w , 7.8 WSmd/SmtPOWERPAK SC - 70 - 6ReelSi2 Channel4.5 v , - 4.5 V3.7 nC , 5.3 nCEnhancement Trenchfet, Powerpak
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