MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BUK78150-55ACUX


NXP Semiconductors MOSFET N-channel TrenchMOS standard level FET
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Nexperia 52703
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AUD 0.2532
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5.5 A55 V150 mOhmsN - Channel 2 V- 55 C+ 150 C8 WSmd/SmtSOT - 223 - 3ReelSi1 Channel10 V Enhancement  
Si2333CDS-T1-E3


MOSFET 12V 5.1A 2.5W 35mohm @ 4.5V
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Vishay 3417
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AUD 0.3315
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   P - Channel  - 55 C+ 150 C Smd/SmtSOT - 23 - 3Reel       
SQ2309ES-T1_GE3


MOSFET P Trench 60V 1.7A (Tc) 2.5V @ 250uA 336 mΩ @ 3.8A,10V SOT-23 RoHS
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Vishay 2910
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AUD 0.3134
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- 1.7 A- 60 V500 mOhmsP - Channel   + 175 C600 mW  ReelSi +/- 20 V   Trenchfet
PJQ5530_R2_00201


MOSFETs 30V N-Channel (LL) SGT MOSFET
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Panjit 2910
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AUD 0.3143
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49 A30 V7.3 mOhmsN - Channel 2.5 V- 55 C+ 150 C27.8 WSMD/SMTDFN - 5060X - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V12.4 nCEnhancement  
RQ5E025TNTL


MOSFET NCH 30V 2.5A SMALL SIGNAL
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ROHM 2910
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AUD 0.317
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2.5 A30 V92 mOhmsN - Channel 500 mV- 55 C+ 150 C1 WSmd/SmtSOT - 346T - 3Cut TapeSi1 Channel12 V3.3 nCEnhancement  
WM15P10M2


Transistor: P-MOSFET; unipolar; SOT23
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Wayon 2910
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AUD 0.319
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HSBB4252


40V 30A 21W 10m@10V,10A 1.5V@250uA 2 N-Channel PRPAK-8(3x3) MOSFETs ROHS
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HUASHUO 2910
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AUD 0.3193
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RQ5L045BGTCL


MOSFETs Nch 60V 4.5A, TSMT3, Power MOSFET
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ROHM 2910
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AUD 0.3195
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4.5 A60 V32 mOhmsN - Channel 2.5 V- 55 C+ 150 C1 WSMD/SMTSC - 96 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V7.6 nCEnhancement  
RSQ015N06HZGTR


MOSFET NCH 60V 1.5A SMALL SIGNAL MOSF
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ROHM 2910
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AUD 0.3238
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1.5 A60 V290 mOhmsN - Channel 2.5 V- 55 C+ 150 C1.25 WSmd/SmtSC - 95 - 6Cut TapeSi1 Channel20 V2 nCEnhancementAec - Q101 
FDC604P


MOSFET SSOT-6 P-CH
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ON Semiconductor 2910
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AUD 0.3258
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5.5 A20 V33 mOhmsP - Channel  - 55 C+ 150 C1.6 WSmd/SmtSSOT - 6Cut TapeSi1 Channel8 V Enhancement Powertrench
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