MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO4466


MOSFET N-CH 30V 10A 8-SOIC
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Alpha & Omega 2910
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AUD 0.2362
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DMN1019UFDE-7


MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K
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Diodes Incorporated 2910
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AUD 0.2371
Multiples of: 3000

11 A12 V10 mOhmsN - Channel 800 mV- 55 C+ 150 C690 mWSmd/SmtU - DFN2020 - E - 6Cut TapeSi1 Channel8 V27.3 nCEnhancement  
SSM3K2615R,LXGF


SOT-23F MOSFETs ROHS
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Toshiba 2910
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AUD 0.2395
Multiples of: 5

                   
SI2338DS-T1-GE3


N-Channel 30 V 6A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
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Vishay 2910
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AUD 0.2786
Multiples of: 3000

6 A30 V23 mOhmsN - Channel 1.2 V- 55 C+ 150 C2.5 WSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V8.2 nCEnhancement Trenchfet
DMN2080UCB4-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 2910
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AUD 0.2404
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4 A20 V43 mOhmsN - Channel 400 mV- 55 C+ 150 C1.25 W   Si1 Channel5 V7.4 nCEnhancement  
MCH6613-TL-E


MOSFET PCH+NCH 2.5V DRIVE SERIES
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ON Semiconductor 2910
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AUD 0.2438
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350 mA30 V3.7 Ohmsn and p - channel  - 55 C+ 150 C800 mWsmd/smtMCPH - 6Reelsi2 channel10 V1.58 nC   
HSBB6903


PRPAK(3x3) MOSFETs ROHS
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HUASHUO 2910
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AUD 0.2454
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6616A


MOSFET 2 P Channel (Dual) 18V 16A 1V @ 250uA 21 mΩ @ 9A,4.5V;27 mΩ @ 6.2A,2.5V SOP-8_150mil RoHS
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GOFORD 2910
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AUD 0.2501
Multiples of: 5

                   
NTMFS5C468NLT1G


MOSFET T6 40V NCH LL IN SO8
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ON Semiconductor 2910
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AUD 0.251
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37 A40 V17.6 mOhmsN - Channel 1.2 V- 55 C+ 175 C28 WSmd/SmtDFN - 5ReelSi1 Channel+/- 20 V7.3 nCEnhancement  
DMN6070SFCL-7


MOSFET N-Ch 31V to 99V 60V 120mOhm 606pF
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Diodes Incorporated 2910
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AUD 0.251
Multiples of: 3000

2.5 A60 V120 mOhmsN - Channel20 V3 V- 55 C+ 150 C1.8 WSmd/SmtDFN1616 - 6Reel   12.3 nCEnhancement  
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