MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DTM3A25P20NFDB-7


MOSFET Transistor Array
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 2846
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AUD 0.2808
Multiples of: 1

630 mA20 V300 mOhmsN - Channel, Pnp 500 mV- 55 C+ 150 C2.47 WSmd/SmtU - DFN2020 - B - 6ReelSi1 Channel6 V736.6 pCEnhancement  
FDMC7696


MOSFET 30V N-Channel PowerTrench MOSFET
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ON Semiconductor 2846
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AUD 0.275
Multiples of: 5

20 A30 V8.5 mOhmsN - Channel 2 V- 55 C+ 150 C25 WSmd/SmtMLP - 8ReelSi1 Channel20 V16 nC  Powertrench
NTMYS2D4N04CTWG


MOSFET 40V 140A 2.3Ohm Single N-Channel
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ON Semiconductor 2846
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AUD 1.0393
Multiples of: 1

138 A40 V2.3 mOhmsN - Channel 3.5 V- 55 C+ 175 C83 WSMD/SMTLFPAK - 4Reel , Cut TapeSi1 Channel- 20 V , 20 V32 nCEnhancement  
TP2540N3-G-P002


Microchip Technology MOSFET P-CH Enhancmnt Mode MOSFET
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Microchip 2846
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AUD 2.4423
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86 mA400 V30 OhmsP - Channel 2.4 V- 55 C+ 150 C740 mWThrough HoleTO - 92 - 3Reel , Cut TapeSi1 Channel- 20 V , 20 V Enhancement  
FDMC6675BZ


P-Channel 30 V 9.5A (Ta), 20A (Tc) 2.3W (Ta), 36W (Tc) Surface Mount 8-MLP (3.3x3.3)
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ON Semiconductor 2845
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AUD 0.7224
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9.5 A30 V14.4 mOhmsP - Channel  - 55 C+ 150 C2.3 WSmd/SmtMLP - 8ReelSi1 Channel25 V Enhancement Powertrench
DMN601VK-7


Diodes Incorporated MOSFET Dual N-Channel
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Diodes Incorporated 2837
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AUD 0.2331
Multiples of: 5

800 mA60 V3 OhmsN - Channel20 V2.5 V- 65 C+ 150 C250 mWSmd/SmtSOT - 563 - 6ReelSi2 Channel20 V Enhancement  
HSBA30P15


150V 30A 70m@10V,20A 80W 4V@250uA 1PCSPChannel PRPAK-8(5x6) MOSFETs ROHS
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HUASHUO 2825
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AUD 1.1322
Multiples of: 1

                   
NTB7D3N15MC


MOSFET PTNG 150V N-FET D2PAK
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ON Semiconductor 2733
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AUD 2.8567
Multiples of: 1

101 A150 V7.3 mOhmsN - Channel 4.5 V- 55 C+ 175 C166 WSMD/SMTD2PAK - 3 (TO - 263 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V53 nCEnhancement PowerTrench
HSBA0715


150V 90A 7.95mΩ@10V,30A 187W 4V@250uA N Channel PRPAK(5x6) MOSFETs ROHS
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HUASHUO 2624
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AUD 1.7862
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PMV28UNEAR


MOSFET PMV28UNEA/TO-236AB/REEL 7" Q3/
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Nexperia 2485
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AUD 1.158
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4.7 A20 V32 mOhmsN - Channel 450 mV- 55 C+ 150 C1.05 WSmd/SmtTO - 236AB - 3ReelSi1 Channel4.5 V6.2 nCEnhancement  
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