MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2366DS-T1-GE3


Vishay Semiconductors MOSFET 30 Volts 5.8 Amps 2.1 Watts
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Vishay 2880
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AUD 0.3197
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5.8 A30 V36 mOhmsN Channel 1.2 V- 55 C+ 150 C2.1 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V6.4 nCEnhancement Trenchfet
SQS462ENW-T1_GE3


MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET
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Vishay 2880
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AUD 0.4613
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8 A60 V63 mOhmsN - Channel 2.5 V- 55 C+ 175 C33 WSMD/SMTPOWERPAK 1212 - 8 Si1 Channel- 20 V , + 20 V8 nCEnhancement TrenchFET
CSD17579Q5A


MOSFET 30-V, N channel NexFET power MOSFET, single SON 5 mm x 6 mm, 13.3 mOhm 8-VSONP
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Texas Instruments 2880
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AUD 0.4699
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20 A30 V11.6 mOhmsN - Channel     Smd/SmtVSONP - 8Tape And ReelSi1 Channel20 V Enhancement Nexfet
DMN4008LFG-13


MOSFET 40V N-Ch Enh FET 20Vgs 19.2A 74nC
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Diodes Incorporated 2880
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AUD 0.5558
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14.4 A40 V7 mOhmsN - Channel 3 V- 55 C+ 150 C1 WSmd/SmtPowerdi3333 - 8Cut TapeSi1 Channel20 V34 nCEnhancement  
SQS407ENW-T1_GE3


MOSFET -30V Vds 20V Vgs PowerPAK 1212-8W
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Vishay 2880
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AUD 0.7453
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16 A30 V10.8 mOhmsP - Channel 1.5 V- 55 C+ 175 C62.5 WSmd/SmtPOWERPAK - 1212 - 8WCut TapeSi1 Channel20 V77 nCEnhancement  
BSN20BK215


- MOSFETs ROHS
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Nexperia 2880
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AUD 0.8908
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FDMS007N08LC


MOSFET PTNG 8020V IN 5X6
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ON Semiconductor 2880
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AUD 1.7086
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 80 V N - Channel     Smd/SmtPQFN - 8Cut TapeSi1 Channel20 V Enhancement  
STL8N6LF6AG


MOSFET Automotive-grade dual N-channel 60 V, 27 mO typ., 20 A STripFET II Power MOSFET in a PowerFLAT 5x6 double island package
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STMicroelectronics 2880
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AUD 3.2403
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9.6 A60 V43 mOhmsN - Channel 2.5 V- 55 C+ 175 C75 WSmd/SmtPowerflat - 8ReelSi2 Channel-27.3 nCEnhancementAec - Q101Stripfet
PXP400-100QSJ


100V 400mO@1.4A,10V P Channel MLPAK(3.3x3.3) MOSFETs ROHS
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Nexperia 2879
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AUD 0.4367
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1.4 A100 V400 mOhmsP - Channel 4 V- 55 C+ 150 C1.7 WSMD/SMTMLPAK33 - 8Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V10.1 nCEnhancement  
RF4E060AJTCR


MOSFET NCH 30V 6A MIDDLE POWER
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ROHM 2603
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AUD 0.3513
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6 A30 V37 mOhmsN - Channel 500 mV- 55 C+ 150 C2 WSmd/SmtHuml2020l - 8Cut TapeSi1 Channel12 V4 nCEnhancement  
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