MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WSP4409


MOSFET P Trench 30V 17.6A (Tc) 2.3V @ 250uA 7.2 mΩ @ 17.6A,10V SOP-8_150mil RoHS
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Winsok 2910
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AUD 0.2852
Multiples of: 5

                   
NTLJF4156NTAG


MOSFET NFET 2X2 30V 4A 70MOHM
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ON Semiconductor 2910
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AUD 0.2902
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3.7 A30 V70 mOhmsN - Channel  - 55 C+ 150 C1.5 WSmd/SmtWDFN - 6ReelSi1 Channel8 V Enhancement  
DMN3135LVT-7


Diodes Incorporated MOSFET MOSFET BVDSS: 31V-40 1V-40V TSOT23 T&R 3K
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Diodes Incorporated 2910
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AUD 0.2956
Multiples of: 3000

3.5 A30 V100 mOhmsN - Channel 1.3 V- 55 C+ 150 C1.27 WSmd/SmtTSOT - 23 - 6ReelSi2 Channel10 V4.1 nCEnhancement  
RV7L020GNTCR1


MOSFETs Nch 60V 2A Middle Power MOSFET
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ROHM 2910
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AUD 0.2972
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2 A60 V157 mOhmsN - Channel 2.7 V- 55 C+ 150 C1.1 WSMD/SMTDFN - 1212 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V2.1 nCEnhancement  
BSL207SPH6327XTSA1


Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6
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Infineon 2910
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AUD 0.2976
Multiples of: 3000

            Optimos P      
FDMS7698


MOSFET 30V N-Channel PowerTrench MOSFET
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ON Semiconductor 2910
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AUD 0.2935
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13.5 A30 V8.1 mOhmsN - Channel 1 V- 55 C+ 150 C29 WSmd/SmtPOWER - 56ReelSi1 Channel20 V17 nCEnhancement Powertrench
HSBA6901


60V 42W 2.5V@250uA 1PCSN-Channel&1PCSP-Channel PRPAK-5x6 MOSFETs ROHS
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HUASHUO 2910
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AUD 0.2985
Multiples of: 5

                   
SIA918EDJ-T1-GE3


MOSFET Dual N-Ch 30V Vds 3.6nC Qg Typ
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Vishay 2910
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AUD 0.3065
Multiples of: 3000

           Cut TapeSi     Trenchfet
CSD22204W


MOSFET -8V, P channel NexFET power MOSFET, single WLP 1.5 mm x 1.5 mm, 9.9 mOhm, gate ESD protection 9-DSBGA
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Texas Instruments 2910
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AUD 0.3073
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- 5 A- 8 V14 mOhmsP - Channel    1.7 WSmd/SmtBGA - 9ReelSi1 Channel- 6 V   Nexfet
SI2323DDS-T1-GE3


MOSFET -20V Vds 8V Vgs SOT-23
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Vishay 2910
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AUD 0.3089
Multiples of: 3000

5.3 A20 V39 mOhmsP - Channel 400 mV- 55 C+ 150 C1.7 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V24 nCEnhancement Trenchfet
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