MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HSBB4016


40V 40A 4.9mΩ@10V,10A 43W 2.5V@250uA 175pF@15V N Channel 2354pF@15V 20nC@4.5V -55℃~+150℃@(Tj) PRPAK3x3 MOSFETs ROHS
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HUASHUO 2876
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AUD 0.1503
Multiples of: 5

                   
DMN2036UCB4-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 2876
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AUD 0.2041
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   N - Channel, Npn 1.3 V- 55 C+ 150 C1.45 WSmd/SmtX2 - WLB1616 - 4 Si2 Channel4.5 V12.6 nCEnhancement  
SIZ340BDT-T1-GE3


Mosfet Array 2 N-Channel (Dual) 30V 16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc) 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc) Surface Mount 8-Power33 (3x3)
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Vishay 2876
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AUD 0.5789
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36 A , 69.3 A30 V4.31 mOhmsN - Channel - 16 V , + 20 V8.4 n C , 15.7 n C- 55 C+ 150 CSMD/SMTPowerpair - 3X3Trenchfet , Cut Tape , ReelSi2 Channel8.56 mOhms2.4 V16.7 W, 31 WEnhancement 
ZXM62P03E6TA


MOSFET 30V P-Chnl HDMOS
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Diodes Incorporated 2875
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AUD 0.4169
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1.5 A30 V150 mOhmsP - Channel 1 V- 55 C+ 150 C625 mWSmd/SmtSOT - 26 - 6Cut TapeSi1 Channel10 V10.2 nCEnhancement  
ECH8315-TL-H


ON Semiconductor MOSFET SWITCHING DEVICE
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ON Semiconductor 2875
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AUD 0.4613
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- 7.5 A- 30 V25 mOhmsP - Channel     Smd/SmtECH - 8ReelSi1 Channel     
DMN13M9UCA6-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 2875
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AUD 0.8538
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           Cut Tape       
PSMN4R5-40BS,118


MOSFET Std N-chanMOSFET
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Nexperia 2875
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AUD 1.1066
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100 A40 V4.5 mOhmsN - Channel  - 55 C+ 175 C148 WThrough HoleD2PAKReelSi1 Channel20 V    
YJJ09N03A


30V 9A 9mΩ@10V,6A 1.25W 2.5V@250uA N Channel SOT-23-6L MOSFETs ROHS
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Yangjie 2846
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AUD 0.1223
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NTMFSC006N12MC


MOSFETs N-Channel Dual CoolTM 56 PowerTrench MOSFET 120 V, 92 A, 6.0mohm MOSFET - Power, Dualcool N-Channel, PQFN8, 120V, 6.1mohm, 92A
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ON Semiconductor 2338
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AUD 1.6746
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92 A120 V6.1 mOhmsN - Channel 4 V + 150 C104 WSMD/SMTDFN - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V48 nCEnhancement PowerTrench
WSP8810


TSSOP-8 MOSFETs ROHS
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Winsok 1382
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AUD 0.1277
Multiples of: 5

                   
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