MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
QS5U17TR


N-Channel 30 V 2A (Ta) 900mW (Ta) Surface Mount TSMT5
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ROHM 2851
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AUD 0.391
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2 A30 V100 mOhmsN - Channel  - 55 C+ 150 C1.25 WSmd/SmtT SMT - 5ReelSi1 Channel12 V Enhancement  
RQ6A045ZPTR


MOSFET PCH -12V -4.5A SMALL SIGNAL
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ROHM 2851
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AUD 0.48
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4.5 A12 V35 mOhmsP - Channel 300 mV- 55 C+ 150 C1.25 WSmd/SmtSOT - 457T - 6Cut TapeSi1 Channel10 V31 nCEnhancement  
NVMYS4D5N04CTWG


MOSFETs Power MOSFET 40 V, 4.5m?, 80 A, Single N-Channel
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ON Semiconductor 2850
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AUD 0.724
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80 A40 V4.5 mOhmsN - Channel 3.5 V- 55 C+ 175 C55 WSMD/SMTLFPAK - 4Reel , Cut TapeSi1 Channel- 20 V , + 20 V18 nCEnhancement  
STU9N65M2


STMicroelectronics MOSFET
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STMicroelectronics 2850
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AUD 0.9391
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5 A650 V900 mOhmsn - channel 3 V- 55 C+ 150 C60 Wthrough holeIPAK - 3Tubesi1 channel25 V10 nC  mdmesh
WM10N35M3


Transistor: N-MOSFET; unipolar; SOT23-6
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Wayon 2849
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AUD 0.163
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TPM2299EX6


SOT-563 MOSFETs ROHS
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TECH PUBLIC 2846
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AUD 0.1064
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STL57N65M5


STMicroelectronics MOSFET N-Ch 650V 0.061 Ohm 40 A Mdmesh M5
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STMicroelectronics 2834
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AUD 8.6865
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22.5 A650 V61 mOhmsN - Channel25 V4 V- 55 C+ 150 C189 WSmd/SmtPowerflat - 4ReelSi 25 V96 nC  Mdmesh
SQ3426CEEV-T1_BE3


MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET
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Vishay 2560
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AUD 0.2693
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7 A60 V42 mOhmsN - Channel 2.5 V- 55 C+ 175 C5 WSMD/SMTTSOP - 6 Si1 Channel- 20 V , 20 V13 nCEnhancement  
WM12N35M2


Transistor: N-MOSFET; unipolar; SOT23
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Wayon 2237
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AUD 0.163
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IRFD310PBF


N-Channel 400 V 350mA (Ta) 1W (Ta) Through Hole 4-HVMDIP
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Vishay 0
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AUD 1.0715
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   N - Channel  - 55 C+ 150 C Through HoleHEXDIP - 4TubeSi      
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