MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TN5325K1-G


Transistor: N-MOSFET; unipolar; 250V; 1.2A; 360mW; SOT23-3
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Microchip 17385
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AUD 0.5814
Multiples of: 1

150 mA250 V7 OhmsN - Channel 600 mV- 55 C+ 150 C360 mWSmd/SmtSOT - 23 (TO - 236AB)ReelSi1 Channel10 V Enhancement  
IRLR2705TRLPBF


MOSFET MOSFT 55V 24A 40mOhm 16.7nC LogLvl
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Infineon 2910
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AUD 0.5556
Multiples of: 3000

28 A55 V65 mOhmsN - Channel    46 WSmd/SmtDPAKReelSi1 Channel16 V16.7 nC   
SI7232DN-T1-GE3


MOSFET 20V 25A 23W 16.4mohm @ 4.5V
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Vishay 2910
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AUD 0.5569
Multiples of: 3000

25 A20 V16.4 mOhmsN - Channel 400 mV- 55 C+ 150 C23 WSmd/SmtPOWERPAK 1212 - 8ReelSi2 Channel4.5 V32 nCEnhancement Trenchfet
PJQ5435E-AU_R2_006A1


MOSFETs 30V P-Channel Enhancement Mode MOSFET
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Panjit 2910
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AUD 0.576
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47 A30 V12.1 mOhmsP - Channel 2.5 V- 55 C+ 175 C43 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 25 V , + 25 V34 nCEnhancementAEC - Q101 
SQJ414EP-T1_BE3


MOSFETs N-CHANNEL 30-V (D-S) 175C MOSFET
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Vishay 2910
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AUD 0.5815
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UT6MC5TCR


MOSFETs UT6MC5 is a low on-resistance MOSFET ideal for switching applications.
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ROHM 2910
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AUD 0.5852
Multiples of: 1

           Reel , Cut TapeSi      
UT6MB5TCR


MOSFETs UT6MB5 is a low on-resistance MOSFET ideal for switching applications.
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ROHM 2910
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AUD 0.5852
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           Reel , Cut TapeSi      
PJQ2568A_R1_00201


MOSFETs 60V N-Channel Enhancement Mode MOSFET
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Panjit 2910
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AUD 0.5867
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17 A60 V16 mOhmsN - Channel 3 V- 55 C+ 150 C9.6 WSMD/SMTDFN - 2020B - 6Reel , Cut TapeSi1 Channel- 20 V , + 20 V16 nCEnhancement  
IRLZ14PBF-BE3


N-Channel 60V 10A (Tc) 43W (Tc) Through Hole TO-220AB
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Vishay 2910
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AUD 0.594
Multiples of: 1000

10 A60 V200 mOhmsN - Channel 2 V- 55 C+ 175 C43 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 10 V , + 10 V8.4 nCEnhancement  
FDMC8327L


Fairchild Semiconductor MOSFET PT8 40V20V LL NCh PowerTrench MOSFET
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ON Semiconductor 2910
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AUD 0.5944
Multiples of: 3000

12 A40 V9.7 mOhmsN - Channel20 V - 55 C+ 150 C30 WSmd/SmtMLP - 8ReelSi 20 V9.7 nC , 18.5 nC  Powertrench
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