MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDC653N


mosfet n trench 30v 5a 2v @ 250ua 35 m @ 5a,10v supersot-6 rohs
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ON Semiconductor 5820
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AUD 0.5175
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SQS481ENW-T1_GE3


MOSFET -150V Vds PowerPAK AEC-Q101 Qualified
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Vishay 2910
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AUD 0.5107
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16 A150 V1.095 OhmsP - Channel 3 V- 55 C+ 175 C62.5 WSmd/SmtPOWERPAK - 1212 - 8Cut TapeSi1 Channel20 V8 nC Aec - Q101Trenchfet
AON6314


Transistor: N-MOSFET; unipolar; 30V; 53A; 13W; DFN5x6
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Alpha & Omega 2910
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AUD 0.5164
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SIRA10BDP-T1-GE3


MOSFET 30V Vds 20V Vgs PowerPAK SO-8
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Vishay 2910
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AUD 0.5167
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60 A30 V3.6 mOhmsN - Channel 1.2 V- 55 C+ 150 C43 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel10 V24.1 nCEnhancement Trenchfet, Powerpak
NTHS5443T1G


MOSFET -20V -4.9A P-Channel
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ON Semiconductor 2910
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AUD 0.5337
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4.9 A20 V56 mOhmsP - Channel  - 55 C+ 150 C1.3 WSmd/SmtCHIP - FET - 8ReelSi1 Channel12 V Enhancement  
PJQ5530-AU_R2_002A1


MOSFETs 30V N-Channel (LL) SGT MOSFET
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Panjit 2910
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AUD 0.5343
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16.7 A30 V7.5 mOhmsN - Channel 2.5 V- 55 C+ 175 C33 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V12.4 nCEnhancementAEC - Q101 
NVLJWD040N06CLTAG


MOSFETs T6 60V LL 2X2 WDFNW6
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ON Semiconductor 2910
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AUD 0.5396
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18 A60 V50 mOhmsN - Channel 2 V- 55 C+ 175 C24 WSMD/SMTWDFNW - 6Reel , Cut TapeSi2 Channel- 20 V , + 20 V6 nCEnhancement  
RVQ040N05HZGTR


MOSFET 45V N-CHANNEL 4A
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ROHM 2910
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AUD 0.5494
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           Cut Tape       
SQJB70EP-T1_BE3


MOSFETs DUAL N-CHANNEL 100-V (D-S) 175C MOSFET
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Vishay 2910
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AUD 0.5538
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           Reel , Cut TapeSi      
SIB452DK-T1-GE3


Vishay Semiconductors MOSFET 190V 1.5A 13W 2.4ohm 4.5V
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Vishay 2910
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AUD 0.5541
Multiples of: 3000

670 mA190 V2.4 OhmsN - Channel16 V - 55 C+ 150 C2.4 WSmd/SmtSC - 75 - 6Reel    Enhancement  
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First...741742743744745...

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