MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIR470DP-T1-GE3


MOSFET 40V 60A 104W 2.3mohm @ 10V
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Vishay 2910
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AUD 1.7543
Multiples of: 3000

60 A40 V1.9 mOhmsN - Channel 1 V- 55 C+ 150 C104 WSMD/SMTPOWERPAK - SO - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V155 nCEnhancement TrenchFET, PowerPAK
IRFR6215TRRPBF


Infineon IR MOSFET 1 P-CH -150V HEXFET 580mOhms 44nC
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Infineon 2910
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AUD 1.0313
Multiples of: 1

13 A- 150 V580 mOhmsp - channel20 V - 55 C+ 175 C110 Wsmd/smtDPAK - 3Reel   44 nCenhancement  
SI7139DP-T1-GE3


MOSFET -30V Vds 20V Vgs PowerPAK SO-8
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Vishay 2910
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AUD 1.045
Multiples of: 3000

40 A30 V5.5 mOhmsP - Channel 1.2 V- 55 C+ 150 C48 WSmd/SmtPOWERPAK SO - 8ReelSi1 Channel- 10 V97 nCEnhancement Trenchfet
SIB452DK-T1-GE3


Vishay Semiconductors MOSFET 190V 1.5A 13W 2.4ohm 4.5V
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Vishay 2910
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AUD 1.0634
Multiples of: 3000

670 mA190 V2.4 OhmsN - Channel16 V - 55 C+ 150 C2.4 WSmd/SmtSC - 75 - 6Reel    Enhancement  
NTTFD1D8N02P1E


MOSFETs FET 25V 1.8 MOHM PC33 DUAL
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ON Semiconductor 2910
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AUD 1.0356
Multiples of: 1

61 A , 126 A25 V , 25 V1.4 mOhms , 4.2 mOhmsN - Channel 2 V , 2 V- 55 C+ 150 C25 W , 36 WSMD/SMTPQFN - 8Reel , Cut TapeSi1 Channel- 12 V , + 16 V12 nC , 37.5 nCEnhancement  
MIC94053YC6-TR


P-Channel 6 V 2A (Ta) 270mW (Ta) Surface Mount SC-70-6
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Microchip 2910
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AUD 1.1231
Multiples of: 1

2 A- 6 V70 mOhmsP - Channel1.8 V- 0.5 V- 40 C+ 150 C270 WSmd/SmtSC - 70 - 6ReelSi 1.8 V Enhancement  
PMV213SN,215


Transistor: N-MOSFET; 100V; 1.2A; Idm: 7.6A; 2W; SOT23-3
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Nexperia 2902
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AUD 0.8074
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtTO - 236ABReel       
IRFBE30PBF


N-Channel 800 V 4.1A (Tc) 125W (Tc) Through Hole TO-220AB
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Vishay 2902
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AUD 1.0875
Multiples of: 1

4.1 A800 V3 OhmsN - Channel 2 V- 55 C+ 150 C125 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V78 nCEnhancement  
BSC009NE2LSATMA1


Transistor: N-MOSFET; unipolar; 25V; 100A; 96W; PG-TDSON-8
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Infineon 2298
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AUD 0.9539
Multiples of: 1

            Optimos      
SIRA02DP-T1-GE3


MOSFET 30V 2mOhm@10V 50A N-Ch G-IV
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Vishay 0
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AUD 1.0871
Multiples of: 1

50 A30 V1.65 mOhmsN - Channel 1.1 V- 55 C+ 150 C71.4 WSmd/SmtPOWERPAK SO - 8ReelSi1 Channel20 v , - 16 V117 nCEnhancement Trenchfet, Powerpak
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