MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI7216DN-T1-E3


MOSFET 40V Vds 20V Vgs PowerPAK 1212-8
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Vishay 5820
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AUD 2.0149
Multiples of: 3000

6 A40 V32 mOhmsN - Channel 1 V- 50 C+ 150 C20.8 WSmd/SmtPOWERPAK 1212 - 8ReelSi2 Channel10 V12.5 nCEnhancement Trenchfet
SI7949DP-T1-GE3


Vishay Semiconductors MOSFET 60V 5.0A 3.5W 64mohm 10V
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Vishay 5820
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AUD 1.1763
Multiples of: 3000

3.2 A- 60 V64 mOhmsP - Channel  - 55 C+ 150 C1.5 WSmd/SmtSO - 8ReelSi 20 V   Trenchfet
SIR662DP-T1-GE3


MOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FET
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Vishay 3252
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AUD 1.6493
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100 A60 V2.2 mOhmsN - Channel 1 V- 55 C+ 150 C104 WSmd/SmtPOWERPAK SO - 8ReelSi1 Channel20 V96 nCEnhancement Trenchfet, Powerpak
VP2110K1-G


Transistor: P-MOSFET; unipolar; -100V; -0.5A; 360mW; SOT23-3
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Microchip 2910
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AUD 1.1287
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120 mA100 V12 OhmsP - Channel 1.5 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 (TO - 236AB)ReelSi1 Channel- 10 V Enhancement  
STL66DN3LLH5


MOSFET Dual N-Ch 5.9mOhm 30V 20A STripFET V
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STMicroelectronics 2910
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AUD 1.0982
Multiples of: 1

20 A30 V5.9 mOhmsN - Channel     Smd/SmtPowerflat - 8ReelSi2 Channel     
SIJ478DP-T1-GE3


N-Channel 80 V 60A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8
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Vishay 2910
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AUD 1.7961
Multiples of: 3000

60 A80 V8 mOhmsN - Channel 2.6 V- 55 C+ 150 C62.5 WSmd/SmtSO - 8ReelSi1 Channel20 V35.5 nCEnhancement Thunderfet Trenchfet
HT8KF6HTB1


MOSFETs HSMT8 150V DUAL 7.A
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ROHM 2910
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AUD 1.1148
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7 A150 V214 mOhmsN - Channel 4 V- 55 C+ 150 C14 WSMD/SMTH SMT - 8Reel , Cut TapeSi2 Channel20 V6.4 nCEnhancement  
RH6G040CHTB1


MOSFETs HSMT8 N-CH 40V 135A
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ROHM 2910
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AUD 1.1328
Multiples of: 1

135 A40 V2.5 mOhmsN - Channel 4 V- 55 C+ 175 C93 WSMD/SMTH SMT - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V32 nCEnhancement  
PJD50N04V-AU_L2_002A1


MOSFETs 40V N-Channel Enhancement Mode MOSFET
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Panjit 2910
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AUD 1.2001
Multiples of: 1

80 A40 V5.9 mOhmsN - Channel 3.5 V- 55 C+ 175 C68 WSMD/SMTTO - 252AA - 2Reel , Cut TapeSi1 Channel- 20 V , + 20 V23 nCEnhancementAEC - Q101 
PJD95P04E-AU_L2_006A1


MOSFETs 40V P-Channel Enhancement Mode MOSFET
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Panjit 2906
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AUD 1.2001
Multiples of: 1

           Reel , Cut TapeSi    AEC - Q101 
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