MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTGS4111PT1G


MOSFET -30V -4.7A P-Channel
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ON Semiconductor 2910
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AUD 0.2162
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   P - Channel  - 55 C+ 150 C Smd/SmtTSOP - 6Reel       
US5U38TR


MOSFET P Chan-20V+/-1A 2.5V Drive
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ROHM 2910
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AUD 0.2164
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1 A20 V390 mOhmsP - Channel  - 55 C+ 150 C700 mWSmd/SmtTUMT - 5ReelSi1 Channel12 V Enhancement  
DMN3135LVT-7


Diodes Incorporated MOSFET MOSFET BVDSS: 31V-40 1V-40V TSOT23 T&R 3K
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Diodes Incorporated 2910
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AUD 0.2183
Multiples of: 3000

3.5 A30 V100 mOhmsN - Channel 1.3 V- 55 C+ 150 C1.27 WSmd/SmtTSOT - 23 - 6ReelSi2 Channel10 V4.1 nCEnhancement  
FDN359BN


MOSFET 30V N-Channel PowerTrench MOSFET
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ON Semiconductor 2910
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AUD 0.2201
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2.7 A30 V46 mOhmsN - Channel  - 55 C+ 150 C500 mWSmd/SmtSSOT - 3ReelSi1 Channel20 V Enhancement  
DMC1030UFDB-7


MOSFET MOSFETBVDSS: 8V-24V
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Diodes Incorporated 2910
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AUD 0.2216
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5.1 A , 3.9 A12 V17 mOhms , 37 mOhmsN - Channel, P - Channel 400 mV , 1 V- 55 C+ 150 C1.36 WSmd/SmtDFN2020 - B - 6Cut TapeSi2 Channel8 V23.1 nC , 20.8 nCEnhancement  
FDC642P


MOSFET SSOT-6 P-CH -20V
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ON Semiconductor 2910
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AUD 0.2257
Multiples of: 3000

4 A20 V65 mOhmsP - Channel  - 55 C+ 150 C1.6 WSmd/SmtSSOT - 6ReelSi1 Channel8 V Enhancement Powertrench
MCH6613-TL-E


MOSFET PCH+NCH 2.5V DRIVE SERIES
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ON Semiconductor 2910
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AUD 0.2293
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350 mA30 V3.7 Ohmsn and p - channel  - 55 C+ 150 C800 mWsmd/smtMCPH - 6Reelsi2 channel10 V1.58 nC   
FDMS7698


MOSFET 30V N-Channel PowerTrench MOSFET
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ON Semiconductor 2910
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AUD 0.2323
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13.5 A30 V8.1 mOhmsN - Channel 1 V- 55 C+ 150 C29 WSmd/SmtPOWER - 56ReelSi1 Channel20 V17 nCEnhancement Powertrench
MD06P115


MOSFETs MOSFET, SOT-26, -60V, -3.1A, 150C, P
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Diotec 2391
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AUD 0.2216
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FDG6322C


MOSFET SC70-6 COMP N-P-CH
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ON Semiconductor 1162
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AUD 0.3663
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220 mA , - 410 mA25 V4 OhmsN - Channel, P - Channel  - 55 C+ 150 C300 mWSmd/SmtSOT - 323 - 6Cut TapeSi2 Channel8 V Enhancement  
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