MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PJD55P03E-AU_L2_006A1


MOSFETs 30V P-Channel Enhancement Mode MOSFET
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Panjit 2910
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AUD 1.4727
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48 A30 V12.1 mOhmsP - Channel 2.5 V- 55 C+ 175 C3 WSMD/SMTTO - 252AA - 3Reel , Cut TapeSi1 Channel- 25 V , + 25 V34 nCEnhancementAEC - Q101 
NTMYS020N08LHTWG


MOSFETs T8 80V LL LFPAK
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ON Semiconductor 2910
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AUD 1.4891
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30 A80 V25 mOhmsN - Channel 2 V- 55 C+ 175 C42 WSMD/SMTLFPAK - 4Reel , Cut TapeSi1 Channel- 20 V , + 20 V12 nCEnhancement  
SI7655DN-T1-GE3


MOSFET -20V 3.6mOhm@10V 40A P-Ch G-III
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Vishay 2910
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AUD 1.2562
Multiples of: 3000

40 A20 V3 mOhmsP - Channel 1.1 V- 50 C+ 150 C57 WSmd/SmtPOWERPAK 1212 - 8SReelSi1 Channel12 V225 nCEnhancement Trenchfet
STL15N60M2-EP


STMicroelectronics MOSFET
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STMicroelectronics 2910
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AUD 1.525
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7 A600 V418 mOhmsN - Channel 2 V- 55 C+ 150 C55 WSmd/SmtPowerflat - 5X6 - HV - 8Cut TapeSi1 Channel25 V17 nCEnhancement Mdmesh
PJQ5540V-AU_R2_002A1


MOSFETs 40V N-Channel Enhancement Mode MOSFET
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Panjit 2910
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AUD 1.5269
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174 A40 V2.1 mOhmsN - Channel 3.5 V- 55 C+ 175 C3.3 WSMD/SMTDFN - 5060X - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V63 nCEnhancementAEC - Q101 
SI7820DN-T1-GE3


MOSFET 200V 2.6A 3.8W 240mohm @ 10V
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Vishay 2910
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AUD 1.4841
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK 1212 - 8ReelSi     Trenchfet
STB80NF10T4


MOSFET N-Ch 100 Volt 80 Amp
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STMicroelectronics 2910
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AUD 1.8351
Multiples of: 1000

80 A100 V15 mOhmsN - Channel 2 V- 55 C+ 175 C300 WSmd/SmtD2PAKReelSi1 Channel10 V135 nCEnhancement Stripfet
FDN86501LZ


Fairchild Semiconductor MOSFET
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ON Semiconductor 2910
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AUD 1.6985
Multiples of: 3000

2.6 A60 V198 mOhmsN - Channel 1 V- 55 C+ 150 C1.5 WSmd/SmtSOT - 23 - 3ReelSi1 Channel+/- 20 V3.8 nCEnhancement Powertrench
STP9NK65Z


STMicroelectronics MOSFET N-Ch 650 Volt 6.4Amp Zener SuperMESH
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STMicroelectronics 2902
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AUD 1.4715
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7 A650 V1.2 OhmsN - Channel30 V - 55 C+ 150 C125 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V41 nCEnhancement Supermesh
STP140NF55


MOSFET N-Ch 55 Volt 80 Amp
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STMicroelectronics 58
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AUD 2.2985
Multiples of: 1

80 A55 V8 mOhmsN - Channel  - 55 C+ 175 C300 WThrough HoleTO - 220TubeSi1 Channel20 V Enhancement Stripfet
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