MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RSQ015N06HZGTR


MOSFET NCH 60V 1.5A SMALL SIGNAL MOSF
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ROHM 2910
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AUD 0.3238
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1.5 A60 V290 mOhmsN - Channel 2.5 V- 55 C+ 150 C1.25 WSmd/SmtSC - 95 - 6Cut TapeSi1 Channel20 V2 nCEnhancementAec - Q101 
MCH6336-P-TL-E


P-CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS
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ON Semiconductor 2910
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AUD 0.3246
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FDC638P


Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
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ON Semiconductor 2910
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AUD 0.3343
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            Powertrench®      
SIA537EDJ-T1-GE3


Mosfet Array N and P-Channel 12V, 20V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual
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Vishay 2910
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AUD 0.3455
Multiples of: 3000

4.5 A12 v , - 20 V75 mOhmsN And P - Channel8 V1 V- 55 C+ 150 C7.8 WSmd/SmtSC - 70 - 6ReelSi2 Channel8 V10.5 nC , 16.3 nCEnhancement Trenchfet
DMP4025SFGQ-13


MOSFET 40V P-CH Enhance Mode
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Diodes Incorporated 2910
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AUD 0.3558
Multiples of: 3000

7.2 A40 V25 mOhmsP - Channel 800 mV- 55 C+ 150 C810 mWSmd/SmtPowerdi3333 - 8ReelSi1 Channel20 V33.7 nCEnhancementAec - Q101 
IPU80R4K5P7AKMA1


800V 1.5A 13W 4.5O@400mA,10V N Channel TO-251-3-21 MOSFETs ROHS
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Infineon 2910
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AUD 0.3661
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1.5 A800 V4.5 OhmsN - Channel 3 V- 50 C+ 150 C13 WSmd/SmtTO - 251 - 3TubeSi1 Channel30 V4 nCEnhancement Coolmos
FDC3601N


MOSFET Dual N-Ch 100V Spec Power Trench
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ON Semiconductor 2910
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AUD 0.3582
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1 A100 V500 mOhmsN - Channel  - 55 C+ 150 C960 mWSmd/SmtSSOT - 6ReelSi2 Channel20 V Enhancement Powertrench
HSBA4050


PRPAK-8(5x6) MOSFETs ROHS
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HUASHUO 2672
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AUD 0.2998
Multiples of: 5

                   
AOSP66406


Transistor: N-MOSFET; unipolar; 40V; 13A; 2W; SO8
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Alpha & Omega 1827
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AUD 0.3615
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WNM3060-6/TR


DFN-6L(2x2) MOSFETs ROHS
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Will Semiconductor 475
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AUD 0.2899
Multiples of: 5

                   
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