MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDMS1D2N03DSD


MOSFET PT11N 3012 & PT11
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ON Semiconductor 2910
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AUD 1.806
Multiples of: 1

30 A30 V1.2 mOhms , 4 mOhmsN - Channel     Smd/SmtPowerclip56 - 8Cut TapeSi2 Channel16 V11 nC , 39 nCEnhancement  
FDMS86300


MOSFET 80V N-Channel PowerTrench MOSFET
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ON Semiconductor 2910
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AUD 1.8201
Multiples of: 3000

42 A80 V5.5 mOhmsN - Channel 3.4 V- 55 C+ 150 C104 WSmd/SmtPOWER 56ReelSi1 Channel20 V59 nCEnhancement Powertrench
SI7216DN-T1-GE3


MOSFET Dual N-Ch MOSFET 40V 32mohm @ 10V
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Vishay 2910
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AUD 1.903
Multiples of: 3000

   N - Channel  - 50 C+ 150 C Smd/SmtPOWERPAK 1212 - 8ReelSi     Trenchfet
VN2210N3-G


Transistor: N-MOSFET; unipolar; 100V; 8A; 740mW; TO92
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Microchip 2910
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AUD 3.3769
Multiples of: 1

1.2 A100 V4 OhmsN - Channel  - 55 C+ 150 C1 WThrough HoleTO - 92BulkSi1 Channel20 V Enhancement  
SIDR104ADP-T1-RE3


MOSFET N-CHANNEL 100 V
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Vishay 2910
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AUD 1.8802
Multiples of: 1

81 A100 V6.1 mOhmsN - Channel 4 V- 55 C+ 150 C100 WSMD/SMT Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V46.1 nCEnhancement  
FDMS86322


MOSFET 80V N-Channel PowerTrench MOSFET
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ON Semiconductor 2910
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AUD 1.8884
Multiples of: 3000

13 A80 V7.65 mOhmsN - Channel 4 V + 150 C104 WSmd/SmtPOWER 56ReelSi1 Channel20 V55 nC  Powertrench
FDMS037N08B


Fairchild Semiconductor MOSFET PT7 75V 3.7mohm PQFN56
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ON Semiconductor 2910
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AUD 2.0545
Multiples of: 3000

100 A75 V3.7 mOhmsN - Channel  - 55 C+ 150 C Smd/SmtPOWER - 56 - 8ReelSi     Powertrench
STL130N8F7


Transistor: N-MOSFET; STripFET™ F7; unipolar; 80V; 19A; 135W
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STMicroelectronics 2910
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AUD 2.0808
Multiples of: 3000

120 A80 V3.6 mOhmsN - Channel 2.5 V- 55 C+ 175 C135 WSMD/SMTPowerflat - 5X6 - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V96 nCEnhancement STripFET
SIHD14N60E-BE3


MOSFET N-CHANNEL 600V
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Vishay 2910
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AUD 2.006
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10.5 A500 V380 mOhmsN - Channel 4 V- 55 C+ 150 C114 WSMD/SMTTO - 252 - 3Cut Tape , ReelSi1 Channel- 30 V , + 30 V25 nCEnhancement  
STL15N65M5


MOSFET N-CH 650V 0.335Ohm 10A MDmesh V
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STMicroelectronics 875
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AUD 2.0552
Multiples of: 1

10 A650 V375 mOhmsN - Channel 5 V- 55 C+ 150 C52 WSMD/SMTPowerflat - 5X6 - 8Reel , Cut TapeSi1 Channel- 25 V , 25 V22 nCEnhancement MDmesh
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