MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN6070SFCL-7


MOSFET N-Ch 31V to 99V 60V 120mOhm 606pF
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Diodes Incorporated 2910
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AUD 0.236
Multiples of: 3000

2.5 A60 V120 mOhmsN - Channel20 V3 V- 55 C+ 150 C1.8 WSmd/SmtDFN1616 - 6Reel   12.3 nCEnhancement  
DMN2080UCB4-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 2910
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AUD 0.2404
Multiples of: 1

4 A20 V43 mOhmsN - Channel 400 mV- 55 C+ 150 C1.25 W   Si1 Channel5 V7.4 nCEnhancement  
SI3127DV-T1-GE3


MOSFET P-Channel 60-V (D-S)
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Vishay 2910
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AUD 0.2418
Multiples of: 3000

- 5.1 A- 60 V146 mOhmsP - Channel - 1 V- 55 C+ 150 C4.2 WSmd/SmtTSOP - 6ReelSi1 Channel+/- 20 V20 nCEnhancement Trenchfet
RQ5P010SNTL


MOSFET NCH 100V 1A SMALL SIGNAL
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ROHM 2910
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AUD 0.2432
Multiples of: 5

1 A100 V520 mOhmsN - Channel 1 V- 55 C+ 150 C1 WSmd/SmtSOT - 346T - 3Cut TapeSi1 Channel20 V3.5 nCEnhancement  
DMN3730UFB4-7


MOSFET 30V N-Ch VDSS 30V VGSS 8V VGS 4.5V
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Diodes Incorporated 2910
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AUD 0.2448
Multiples of: 3000

730 mA30 V460 mOhmsN - Channel  - 55 C+ 150 C690 mWSmd/SmtDfn1006h4 - 3ReelSi1 Channel8 V1.6 nC   
ZXMN3A01FTA


N-Channel 30 V 1.8A (Ta) 625mW (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 2910
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AUD 0.2448
Multiples of: 3000

2 A30 V120 mOhmsN - Channel 1 V- 55 C+ 150 C625 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V3.5 nCEnhancement  
DMP2035UFDF-7


MOSFET P Trench 20V 8.1A 1V @ 250uA 29 mΩ @ 6.4A,4.5V U-DFN2020-6 RoHS
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Diodes Incorporated 2910
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AUD 0.2512
Multiples of: 1

                   
HSBA4054


40V 49A 22W 6.5m@10V,15A 2.2V@250uA 1PCSNChannel PRPAK-8(5x6) MOSFETs ROHS
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HUASHUO 2764
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AUD 0.2394
Multiples of: 5

                   
SSM3K2615R,LXGF


SOT-23F MOSFETs ROHS
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Toshiba 1411
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AUD 0.2503
Multiples of: 5

                   
RV7C040BCTCR1


MOSFETs DFN1212 P CHAN 20V
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ROHM 24
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AUD 0.2331
Multiples of: 1

4 A20 V63 mOhmsP - Channel 1.2 V- 55 C+ 150 C1.1 WSMD/SMTDFN - 1212 - 3Reel , Cut TapeSi1 Channel- 8 V , + 8 V6.5 nCEnhancement  
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