MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTTFS4941NTAG


Trans MOSFET N-CH 30V 19A 8-Pin WDFN T/R
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ON Semiconductor 2910
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AUD 1.2416
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           Tape And Reel    enhancement  
SI7157DP-T1-GE3


MOSFET -20V .0016ohm@-10V -60A P-Ch
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Vishay 2910
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AUD 1.2235
Multiples of: 3000

- 60 A- 20 V1.25 mOhmsP - Channel12 V- 500 mV to - 1.4 V- 55 C+ 150 C104 WSmd/SmtSO - 8Reel   202.5 nC  Trenchfet
SQJ402EP-T1_GE3


MOSFET 100V 32A 27watt AEC-Q101 Qualified
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Vishay 2910
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AUD 1.2019
Multiples of: 3000

32 A100 V11 mOhmsN - Channel 1.5 V- 55 C+ 175 C83 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel10 V34 nCEnhancementAec - Q101Trenchfet
TQM032NH04LCR RLG


MOSFETs 40V, 81A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 2910
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AUD 1.1673
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81 A40 V3.2 mOhmsN - Channel 2.2 V- 55 C+ 175 C115 WSMD/SMTPDFN56U - 8Reel , Cut TapeSi1 Channel- 16 V , + 16 V23.7 nCEnhancement PerFET
SI7212DN-T1-GE3


Vishay Semiconductors MOSFET 30V 6.8A 2.6W 36mohm 10V
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Vishay 2910
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AUD 1.289
Multiples of: 3000

6.8 A30 V36 mOhmsN - Channel 600 mV- 55 C+ 150 C2.6 WSMD/SMTPOWERPAK - 1212 - 8Reel , Cut TapeSi2 Channel- 12 V , 12 V11 nCEnhancement TrenchFET
SI7456DDP-T1-GE3


Vishay Semiconductors MOSFET 100volt 23mOhms10V 27.8A N-Ch T-FET
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Vishay 2910
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AUD 1.2849
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27.8 A100 V23 mOhmsN - Channel 2.8 V- 55 C+ 150 C35.7 WSmd/SmtSO - 8ReelSi 20 V9.7 nC  Thunderfet Trenchfet
FQPF7N65C


MOSFET 650V N-Channel Adv Q-FET C-Series
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ON Semiconductor 2910
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AUD 1.3979
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   N - Channel  - 55 C+ 150 C Through HoleTO - 220FTube       
IRFZ20PBF-BE3


N-Channel 50V 15A (Tc) 40W (Tc) Through Hole TO-220AB
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Vishay 2910
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AUD 1.3929
Multiples of: 1000

15 A50 V100 mOhmsN - Channel 4 V- 55 C+ 150 C40 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V12 nCEnhancement  
STB30NF20


MOSFET N Ch 1500V 2.5A Pwr MOSFET
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STMicroelectronics 2910
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AUD 1.4567
Multiples of: 1000

30 A200 V75 mOhmsN - Channel  - 55 C+ 150 C125 WSmd/SmtD2PAKReelSi1 Channel20 V Enhancement Stripfet
SIR870DP-T1-GE3


MOSFET N-CHANNEL 100-V(D-S)
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Vishay 0
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AUD 0.8244
Multiples of: 1

60 A100 V5 mOhmsN - Channel 1.2 V- 55 C+ 150 C104 WSmd/SmtPOWERPAK SO - 8ReelSi1 Channel20 V84 nCEnhancement Trenchfet, Powerpak
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