MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDMS86202


Power-56-8 MOSFETs ROHS
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ON Semiconductor 5820
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AUD 3.6384
Multiples of: 3000

40 A120 V10.9 mOhmsN - Channel20 V3.1 V- 55 C+ 150 C156 WSmd/SmtPOWER - 56 - 8ReelSi1 Channel20 V45 nC  Powertrench Power Clip
SIR882DP-T1-GE3


MOSFET 100 Volts 60 Amps 83 Watts
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Vishay 5820
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AUD 3.9925
Multiples of: 3000

60 A100 V7.1 mOhmsn - channel 1.2 V- 55 C+ 150 C83 Wsmd/smtPOWERPAK SO - 8Reelsi1 channel20 V58 nCenhancement trenchfet, powerpak
PSMN5R0-30YL,115


MOSFET <=30V N CH TRENCHFET
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Nexperia 2910
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AUD 2.2388
Multiples of: 1500

91 A30 V5 mOhmsN - Channel  - 55 C+ 175 C61 WSmd/SmtSOT - 669 (LFPAK)ReelSi1 Channel20 V Enhancement  
SI7148DP-T1-E3


MOSFET 75V Vds 20V Vgs PowerPAK SO-8
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Vishay 2910
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AUD 2.2965
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8Reel      Trenchfet
AUIRFR8405TRL


Trans MOSFET N-CH 40V 211A Automotive 3-Pin(2+Tab) DPAK T/R
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Infineon 2910
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AUD 2.5631
Multiples of: 1

100 A40 V1.65 mOhmsN - Channel    163 WSmd/SmtTO - 252 - 3ReelSi1 Channel 103 nC  Coolirfet
STB33N60M2


STMicroelectronics MOSFET
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STMicroelectronics 2910
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AUD 3.1959
Multiples of: 1000

26 A600 V125 mOhmsN - Channel+/- 25 V3 V- 55 C+ 150 C190 WSmd/SmtD2PAK - 3    45.5 nCEnhancement  
STL33N65M2


MOSFET N-channel 650 V, 0.124 Ohm typ., 20 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package
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STMicroelectronics 2910
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AUD 4.2124
Multiples of: 1

20 A650 V124 mOhmsn - channel 2 V- 55 C+ 150 C150 Wsmd/smtPowerflat - 8X8 - HV - 5Cut Tapesi1 channel20 V41.5 nCenhancement  
IRFP22N50APBF


N-Channel 500 V 22A (Tc) 277W (Tc) Through Hole TO-247AC
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Vishay 2910
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AUD 4.0112
Multiples of: 1

           TubeSi      
NTMTS001N06CLTXG


MOSFET T6 60V LL PQFN8*8 EXPANSI
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ON Semiconductor 2890
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AUD 2.4791
Multiples of: 1

398.2 A60 V810 uOhmsN - Channel 1.2 V- 55 C+ 175 C244 WSmd/SmtPOWER88 - 8Cut TapeSi1 Channel20 V165 nCEnhancement  
STL33N60DM2


MOSFET N-channel 600 V, 0.115 Ohm typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package
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STMicroelectronics 0
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AUD 2.55
Multiples of: 3000

21 A600 V115 mOhmsN - Channel 3 V- 55 C+ 150 C150 WSmd/SmtPowerflat - 8X8 - HV - 5Cut TapeSi1 Channel25 V43 nCEnhancement Mdmesh
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