MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RQ6A045APTCR


MOSFET PCH -12V -4.5A SMALL SIGNAL
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ROHM 2905
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AUD 0.3761
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4.5 A30 V80 mOhmsN - Channel 1 V- 55 C+ 150 C2.7 WSmd/SmtSOP - 8Cut TapeSi2 Channel20 V3 nCEnhancement  
PJQ5542V-AU_R2_002A1


MOSFETs 40V N-Channel Enhancement Mode MOSFET
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Panjit 2904
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AUD 1.0655
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136 A40 V3 mOhmsN - Channel 3.5 V- 55 C+ 175 C100 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V43 nCEnhancementAEC - Q101 
FCMT180N65S3


MOSFET SUPERFET3 650V 17A 180 mOhm
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ON Semiconductor 2904
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AUD 1.7722
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17 A650 V180 mOhmsN - Channel 2.5 V- 55 C+ 150 C139 WSmd/SmtPOWER - 88 - 4Cut TapeSi1 Channel30 V33 nCEnhancement Superfet Iii
TPC6113,LF(CM


VS6-6 MOSFETs ROHS
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Toshiba 2903
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AUD 0.2928
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BUK7Y12-55B,115


NXP Semiconductors MOSFET N-CHANNEL TRENCHMOS STANDARD LEVEL FET
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Nexperia 2903
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AUD 0.8406
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61.8 A55 V8.2 mOhmsn - channel     smd/smtLFPAK - 4Reelsi1 channel     
P40B10SN-5071


Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 40A; 62.5W
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Shindengen 2903
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AUD 0.8149
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            EETMOS3      
R6030KNXC7G


MOSFET 600V POWER MOSFET
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ROHM 2903
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AUD 6
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30 A600 V130 mOhmsN - Channel 5 V- 55 C+ 150 C86 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 20 V , + 20 V , - 30 V , + 30 V56 nCEnhancement  
TSG65N190CR RVG


MOSFETs 650V, 11A, PDFN56, E-mode GaN Transistor
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Taiwan Semiconductor 2903
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AUD 7.3881
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11 A650 V190 mOhmsN - Channel 2.6 V- 55 C+ 150 C SMD/SMTPDFN - 6Reel , Cut TapeSi1 Channel- 7 V , + 7 V2.2 nCEnhancement  
AON6403


MOSFET P CH 30V 85A DFN5X6
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Alpha & Omega 2884
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AUD 1.0891
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           -       
IRF640NPBF


200V 18A 150mΩ@10V,11A 150W 4V@250uA N Channel +175℃@(Tj) TO-220C MOSFETs ROHS
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JSMSEMI 2075
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AUD 0.4282
Multiples of: 5

                   
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