MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI1411DH-T1-GE3


MOSFET -150V Vds 20V Vgs SC70-6
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 2910
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AUD 0.5325
Multiples of: 3000

         Smd/SmtSOT - 363 - 6Cut TapeSi     Trenchfet
NVMYS011N04CTWG


MOSFET 40V 0.9Ohm 322A Single N-Channel
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ON Semiconductor 2910
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AUD 0.5385
Multiples of: 1

           Cut Tape       
SQJ476EP-T1_GE3


MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified
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Vishay 2910
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AUD 0.5481
Multiples of: 3000

23 A100 V30 mOhmsN - Channel 1.5 V- 55 C+ 175 C45 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel20 V20 nCEnhancementAec - Q101Trenchfet
RVQ040N05HZGTR


MOSFET 45V N-CHANNEL 4A
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ROHM 2910
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AUD 0.5494
Multiples of: 1

           Cut Tape       
SIR410DP-T1-GE3


MOSFET 20V Vds 20V Vgs PowerPAK SO-8
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Vishay 2910
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AUD 0.5571
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8ReelSi     Trenchfet, Powerpak
PJQ5435E-AU_R2_006A1


MOSFETs 30V P-Channel Enhancement Mode MOSFET
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Panjit 2910
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AUD 0.5007
Multiples of: 1

47 A30 V12.1 mOhmsP - Channel 2.5 V- 55 C+ 175 C43 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 25 V , + 25 V34 nCEnhancementAEC - Q101 
SQS481ENW-T1_GE3


MOSFET -150V Vds PowerPAK AEC-Q101 Qualified
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Vishay 2910
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AUD 0.5821
Multiples of: 3000

16 A150 V1.095 OhmsP - Channel 3 V- 55 C+ 175 C62.5 WSmd/SmtPOWERPAK - 1212 - 8Cut TapeSi1 Channel20 V8 nC Aec - Q101Trenchfet
SQJ414EP-T1_BE3


MOSFETs N-CHANNEL 30-V (D-S) 175C MOSFET
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Vishay 2815
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AUD 0.4909
Multiples of: 1

           Reel , Cut TapeSi      
SQJB70EP-T1_BE3


MOSFETs DUAL N-CHANNEL 100-V (D-S) 175C MOSFET
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Vishay 2567
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AUD 0.5139
Multiples of: 1

           Reel , Cut TapeSi      
NVLJWD040N06CLTAG


MOSFETs T6 60V LL 2X2 WDFNW6
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ON Semiconductor 1740
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AUD 0.5237
Multiples of: 1

18 A60 V50 mOhmsN - Channel 2 V- 55 C+ 175 C24 WSMD/SMTWDFNW - 6Reel , Cut TapeSi2 Channel- 20 V , + 20 V6 nCEnhancement  
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