MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIR826ADP-T1-GE3


MOSFET 80V 5.5mOhm@10V 60A N-Ch MV T-FET
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Vishay 2910
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AUD 2.1082
Multiples of: 3000

60 A80 V4.6 mOhmsN - Channel 1.2 V- 55 C+ 150 C104 WSmd/SmtPOWERPAK SO - 8ReelSi1 Channel20 V86 nCEnhancement Thunderfet / Med Voltage
STB23N80K5


MOSFET N-channel 800 V, 0.23 O typ., 16 A MDmesh K5 Power MOSFET in a D PAK package
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STMicroelectronics 2910
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AUD 4.0354
Multiples of: 1000

16 A800 V280 mOhmsn - channel 4 V- 55 C+ 150 C190 Wsmd/smtTO - 252 - 3 si1 channel+/- 30 V33 nCenhancement  
STL23NM50N


STMicroelectronics MOSFET N-Ch 500V 0.170Ohm 14A pwr MOSFET
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STMicroelectronics 2910
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AUD 4.1872
Multiples of: 1

14 A550 V210 mOhmsN - Channel 3 V + 150 C3 WSmd/SmtPowerflat - 8ReelSi1 Channel25 V45 nC  Mdmesh
STB80N20M5


Transistor: N-MOSFET; unipolar; 200V; 38A; 190W; D2PAK
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STMicroelectronics 2910
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AUD 4.4739
Multiples of: 1000

            Supermesh      
STH270N8F7-6


STMicroelectronics MOSFET N-CH 80V 17mOhm 180A STripFET VII
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STMicroelectronics 2910
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AUD 4.7201
Multiples of: 1000

180 A80 V2.1 mOhmsn - channel 2 V- 55 C+ 175 C315 Wsmd/smtH2PAK - 6Reel  20 V193 nCenhancement  
STB11NM80T4


MOSFET N-Ch 800 Volt 11 Amp Power MDmesh
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STMicroelectronics 2910
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AUD 5.3733
Multiples of: 1000

11 A800 V400 mOhmsN - Channel30 V - 65 C+ 150 C150 WSmd/SmtD2PAK - 3Reel    Enhancement  
IPB64N25S3-20


MOSFET Infineon MOSFETs
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Infineon 2910
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AUD 5.2866
Multiples of: 1

64 A250 V17.5 mOhmsN - Channel 2 V- 55 C+ 175 C300 WSmd/SmtTO - 263ReelSi1 Channel20 V89 nCEnhancementAec - Q101 
STW23N85K5


MOSFET N-Ch 850V 0.2Ohm typ 19A Zener-protected
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STMicroelectronics 2910
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AUD 6.0896
Multiples of: 30

19 A850 V275 mOhmsn - channel30 V4 V- 55 C+ 150 C250 Wthrough holeTO - 247 - 3Tubesi1 channel30 V38 nC  mdmesh
STB42N60M2-EP


STMicroelectronics MOSFET
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STMicroelectronics 0
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AUD 3.8456
Multiples of: 1000

34 A600 V87 mOhmsN - Channel 2 V- 55 C+ 150 C250 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel25 V55 nCEnhancement Mdmesh
STB30N65M5


MOSFET POWER MOSFET N-CH 650V
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STMicroelectronics 0
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AUD 3.47
Multiples of: 1000

22 A650 V125 mOhmsN - Channel 4 V- 55 C+ 150 C140 WSMD/SMTD2PAK - 3 (TO - 263 - 3)Reel , Cut TapeSi1 Channel- 25 V , 25 V64 nCEnhancement MDmesh
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