MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQJA68EP-T1_BE3


MOSFETs PowerPAK SO-8L
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Vishay 2910
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AUD 0.3924
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14 A100 V92 mOhmsN - Channel 2.5 V- 55 C+ 175 C45 WSMD/SMTPOWERPAK - SO - 8L - 5 Si1 Channel- 20 V , + 20 V8 nCEnhancement  
PJQ2566A_R1_00201


MOSFETs 60V N-Channel Enhancement Mode MOSFET
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Panjit 2910
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AUD 0.3957
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20 A60 V14 mOhmsN - Channel 2.5 V- 55 C+ 150 C9.6 WSMD/SMTDFN - 2020B - 6Reel , Cut TapeSi1 Channel- 20 V , + 20 V16.7 nCEnhancement  
IRF7313TRPBF


MOSFET 2 N Channel (Dual) 30V 6.5A 1V @ 250uA 29 mΩ @ 5.8A,10V SOIC-8_150mil RoHS
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Infineon 2910
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AUD 0.4009
Multiples of: 500

6.5 A30 V29 mOhmsN - Channel 1 V- 55 C+ 150 C2 WSmd/SmtSOIC - 8ReelSi2 Channel20 V22 nCEnhancement  
FDC602P


MOSFET P-Ch PowerTrench Specified 2.5V
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ON Semiconductor 2910
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AUD 0.4011
Multiples of: 3000

   P - Channel  - 55 C+ 150 C Smd/SmtSSOT - 6Reel       
STL4N10F7


STMicroelectronics MOSFET
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STMicroelectronics 2910
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AUD 0.4032
Multiples of: 3000

4.5 A100 V70 mOhmsN - Channel+/- 20 V4.5 V- 55 C+ 150 C2.9 WSmd/SmtPowerflat - 4    7.8 nCEnhancement  
SI3459BDV-T1-GE3


MOSFET 60V 2.9A 3.3W 216mohm @ 10V
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Vishay 2910
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AUD 0.38
Multiples of: 3000

   P - Channel  - 55 C+ 150 C Smd/SmtTSOP - 6Reel       
DMP4013LFGQ-13


MOSFET MOSFET BVDSS: 31V-40V
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Diodes Incorporated 2910
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AUD 0.4104
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         Smd/SmtPowerdi3333 - 8Cut TapeSi    Aec - Q101 
RSQ045N03TR


ROHM Semiconductor MOSFET N-CH 30V 4.5A TSMT6
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ROHM 2910
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AUD 0.4187
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4.5 A30 V27 mOhmsn - channel  - 55 C+ 150 C1.25 Wsmd/smtT SMT - 6Reelsi1 channel20 V enhancement  
FDMC7200S


MOSFET DUAL N-CH. ER TRENCH MO
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ON Semiconductor 2910
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AUD 0.4257
Multiples of: 3000

18 A , 13 A30 V22 mOhms , 10 mOhmsn - channel20 V    smd/smtPOWER 33 - 8Reelsi2 channel20 V   powertrench
TT8J21TR


ROHM Semiconductor MOSFET P Chan-20V-2.5A Mid-PowerSwitching
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ROHM 2910
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AUD 0.4313
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2.5 A- 20 V68 mOhmsP - Channel10 V - 55 C+ 150 C1.25 WSmd/SmtTSST - 8ReelSi2 Channel10 V Enhancement  
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