MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI7431DP-T1-E3


Vishay Semiconductors MOSFET 200V 3.8A 5.4W 174mohm 10V
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Vishay 8730
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AUD 3.3862
Multiples of: 3000

2.2 A- 200 V174 mOhmsP - Channel20 V - 55 C+ 150 C1.9 WSmd/SmtSO - 8ReelSi   Enhancement Trenchfet
AO4421-HXY


60V 6A 63mΩ 3V P Channel SOP-8 MOSFETs ROHS
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HXY MOS 2910
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AUD 0.4513
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STB43N65M5


MOSFET Automotive-grade N-channel 650 V, 0.058 Ohm typ., 42 A MDmesh M5 Power MOSFET in a D2PAK package
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STMicroelectronics 2910
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AUD 7.903
Multiples of: 1000

42 A650 V63 mOhmsN - Channel 3 V- 55 C+ 150 C250 WSmd/SmtD2PAK - 3Reel-1 Channel+/- 25 V100 nCEnhancementAec - Q101Mdmesh
IPL65R130C7


Trans MOSFET N-CH 650V 15A 4-Pin VSON EP
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Infineon 2910
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AUD 8.4345
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                Enhancement  
PMDT290UNEH


MOSFET PMDT290UNESOT666SOT6
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Nexperia 2908
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AUD 0.1149
Multiples of: 1

800 mA20 V380 mOhmsN - Channel 950 mV- 55 C+ 150 C1.09 WSMD/SMTSOT - 666 - 6Cut Tape , Reel , ReelSi2 Channel- 8 V , + 8 V450 pCEnhancement  
NTMT090N65S3HF


MOSFET SF3 FRFET 650V 90MOHM PQFN88
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ON Semiconductor 2908
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AUD 7.0761
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36 A650 V90 mOhmsN - Channel 5 V- 55 C+ 150 C272 WSMD/SMT Reel , Cut TapeSi1 Channel- 30 V , + 30 V66 nCEnhancement  
IPD80R3K3P7ATMA1


Transistor: N-MOSFET; unipolar; 800V; 1.3A; 18W; PG-TO252-3
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Infineon 2907
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AUD 0.4449
Multiples of: 1

            Coolmos P7      
NTMFS2D1N08XT1G


MOSFETs MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 1.9mohm, 201 A MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 1.9mohm, 201 A
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ON Semiconductor 2907
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AUD 1.5301
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201 A80 V1.9 mOhmsN - Channel 3.6 V- 55 C+ 175 C164 WSMD/SMTDFN - 5Reel , Cut TapeSi1 Channel- 20 V , + 20 V39 nCEnhancement  
DMP3056LDMQ-7


Transistor: P-MOSFET; unipolar; -30V; -3.3A; 1.25W; SOT26
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Diodes Incorporated 2906
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AUD 0.3281
Multiples of: 1

                   
SI4925BDY-T1-E3-HXY


30V 8.5A 20m 2 P-Channel SOP-8 MOSFETs ROHS
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HXY MOS 2885
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AUD 0.3319
Multiples of: 5

                   
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