MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIA429DJT-T1-GE3


MOSFET -20V Vds 8V Vgs Thin PowerPAK SC-70
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Vishay 2910
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AUD 0.4448
Multiples of: 3000

12 A20 V20.5 mOhmsP - Channel 1 V- 55 C+ 150 C3.5 WSmd/SmtSC - 70ReelSi1 Channel8 V62 nC  Trenchfet, Powerpak
SIA436DJ-T1-GE3


MOSFET 8V 12A 19W 9.4mohm @ 4.5V
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Vishay 2910
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AUD 0.4498
Multiples of: 3000

12 A8 V9.4 mOhmsN - Channel 350 mV- 55 C+ 150 C19 WSmd/SmtSC - 70 - 6LReelSi1 Channel4.5 V15 nCEnhancement Trenchfet, Powerpak
RQ5E040AJTCL


MOSFET NPN Low VCE(sat) Transistor
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ROHM 2910
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AUD 0.4498
Multiples of: 1

4 A30 V27 mOhmsN - Channel 500 mV- 55 C+ 150 C1 WSmd/SmtT SMT - 3ReelSi1 Channel+/- 12 V Enhancement  
DMC1028UFDB-7


Diodes Incorporated MOSFET N-Ch 12VDss 8Vgss P-Ch 8Vdss 8Vgss
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Diodes Incorporated 2910
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AUD 0.4522
Multiples of: 3000

6 A , 3.4 A12 v , 20 V17 mOhms , 55 mOhmsN - Channel, P - Channel 400 mV , 1 V- 55 C+ 150 C1.36 WSmd/SmtDFN1612 - 6Tape And ReelSi2 Channel8 V18.5 nC , 11.5 nCEnhancement  
IRFU320PBF


N-Channel 400 V 3.1A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA
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Vishay 2910
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AUD 0.4532
Multiples of: 3000

         Through HoleTO - 251 - 3TubeSi      
FDC6318P


Transistor: P-MOSFET x2; unipolar; -12V; -2.5A; 0.96W; SuperSOT-6
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ON Semiconductor 2910
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AUD 0.455
Multiples of: 3000

            Powertrench®      
IRFR420TRLPBF


N-Channel 500 V 2.4A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
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Vishay 2910
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AUD 0.4556
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtDPAKReelSi      
FDC6312P


MOSFET SSOT-6 P-CH DUAL
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ON Semiconductor 2910
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AUD 0.4606
Multiples of: 3000

2.3 A20 V115 mOhmsP - Channel  - 55 C+ 150 C960 mWSmd/SmtSSOT - 6ReelSi2 Channel8 V Enhancement Powertrench
PJQ5437E-AU_R2_006A1


MOSFETs 30V P-Channel Enhancement Mode MOSFET
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Panjit 2910
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AUD 0.4613
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42 A30 V15 mOhmsP - Channel 2.5 V- 55 C+ 175 C21 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 25 V , + 25 V32 nCEnhancementAEC - Q101 
SI2328DS-T1-GE3


MOSFET 100V Vds 20V Vgs SOT-23
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Vishay 2676
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AUD 0.4848
Multiples of: 1

1.15 A100 V250 mOhmsN - Channel 2 V- 55 C+ 150 C0.73 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V3.3 nCEnhancement Trenchfet
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