MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RQ6P020ATTCR


MOSFETs RQ6P020AT is a low on-resistance MOSFET suitable for Switching, Load switch.
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ROHM 4088
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AUD 0.3661
Multiples of: 1

           Reel , Cut TapeSi      
ZXMN3A03E6TA


N-Channel 30 V 3.7A (Ta) 1.1W (Ta) Surface Mount SOT-23-6
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Diodes Incorporated 2910
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AUD 0.4784
Multiples of: 3000

4.6 A30 V65 mOhmsN - Channel  - 55 C+ 150 C1.1 WSmd/SmtSOT - 26 - 6Cut TapeSi1 Channel20 V Enhancement  
SIRA10BDP-T1-GE3


MOSFET 30V Vds 20V Vgs PowerPAK SO-8
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Vishay 2910
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AUD 0.4854
Multiples of: 1

60 A30 V3.6 mOhmsN - Channel 1.2 V- 55 C+ 150 C43 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel10 V24.1 nCEnhancement Trenchfet, Powerpak
PJQ5534-AU_R2_002A1


MOSFETs 30V N-Channel (LL) SGT MOSFET
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Panjit 2910
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AUD 0.486
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39 A30 V9.3 mOhmsN - Channel 2.5 V- 55 C+ 175 C23 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V9.5 nCEnhancementAEC - Q101 
SI2328DS-T1-E3


MOSFET 100V Vds 20V Vgs SOT-23
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Vishay 2910
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AUD 0.489
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtTO - 236 - 3Reel       
NTHS5443T1G


MOSFET -20V -4.9A P-Channel
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ON Semiconductor 2910
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AUD 0.5019
Multiples of: 1

4.9 A20 V56 mOhmsP - Channel  - 55 C+ 150 C1.3 WSmd/SmtCHIP - FET - 8ReelSi1 Channel12 V Enhancement  
PJQ5530-AU_R2_002A1


MOSFETs 30V N-Channel (LL) SGT MOSFET
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Panjit 2910
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AUD 0.5172
Multiples of: 1

16.7 A30 V7.5 mOhmsN - Channel 2.5 V- 55 C+ 175 C33 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V12.4 nCEnhancementAEC - Q101 
IRLR2705TRLPBF


MOSFET MOSFT 55V 24A 40mOhm 16.7nC LogLvl
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Infineon 2910
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AUD 0.5224
Multiples of: 3000

28 A55 V65 mOhmsN - Channel    46 WSmd/SmtDPAKReelSi1 Channel16 V16.7 nC   
QH8ME5TCR


MOSFETs 100V 2A, Dual Nch+Pch, TSMT8, Power MOSFET : QH8ME5 is a low on-resistance MOSFET ideal for Switching applications.
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ROHM 2662
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AUD 0.4236
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2 A100 V202 mOhms , 270 mOhmsN - Channel, P - Channel 2.5 V- 55 C+ 150 C1.5 WSMD/SMTT SMT - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V2.8 nC , 19.7 nCEnhancement  
WMB175N10LG4


Transistor: N-MOSFET; unipolar; PDFN5060-8
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Wayon 2415
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AUD 0.5454
Multiples of: 1

                   
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