MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO4800


30V 6.2A 22mΩ 1.78W 2 N-Channel SOP-8 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

JSMSEMI 15631
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AUD 0.1644
Multiples of: 5

                   
IRLTS2242TRPBF


Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6
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Infineon 2910
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AUD 0.1854
Multiples of: 3000

6.9 A20 V55 mOhmsP - Channel  - 55 C+ 150 C2 WSmd/SmtTSOP - 6ReelSi1 Channel     
DMP2305UVT-7


Diodes Incorporated MOSFET 20V P-CH MOSFET
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Diodes Incorporated 2910
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AUD 0.1855
Multiples of: 1

4.23 A20 V45 mOhmsP - Channel 900 mV- 55 C+ 150 C1.25 WSmd/SmtTSOT - 26 - 6ReelSi1 Channel8 V7.6 nCEnhancement  
SI1443EDH-T1-GE3


MOSFET -30V 54mOhm@10V 4A P-Ch G-III
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Vishay 2910
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AUD 0.186
Multiples of: 3000

4 A30 V43 mOhmsP - Channel 1.5 V- 55 C+ 150 C2.8 WSmd/SmtSOT - 363 (SC - 70 - 6)ReelSi1 Channel12 V28 nCEnhancement Trenchfet
FDS7779Z(UMW)


30V 16A 2.5W 7.2m@10V,16A 1.5V@250uA SOP-8 MOSFETs ROHS
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Youtai 2910
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AUD 0.1868
Multiples of: 5

                   
TSM210N02CX RFG


MOSFET 20V 6.7A Single N-Channel Power MOSFET
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Taiwan Semiconductor 2910
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AUD 0.1905
Multiples of: 3000

6.7 A20 V19 mOhmsN - Channel 300 mV- 55 C+ 150 C1.56 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V5.8 nCEnhancement  
DMN2100UDM-7


20V 3.3A 55mO@4.5V,6A 1W N Channel SOT-26 MOSFETs ROHS
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Diodes Incorporated 2910
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AUD 0.1937
Multiples of: 3000

3.3 A20 V55 mOhmsN - Channel  - 55 C+ 150 C900 mWSmd/SmtSOT - 26 - 6ReelSi1 Channel8 V Enhancement  
RYU002N05T306


Trans MOSFET N-CH 50V 0.2A 3-Pin UMT T/R
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ROHM 2910
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AUD 0.2037
Multiples of: 1

0.2 A  N    0.2 WSurface Mount Tape And Reel    Enhancement  
HSBA3202


30V 35A 15mΩ@10V,10A 42W 2.3V@250uA 2 N-Channel PRPAK5x6 MOSFETs ROHS
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HUASHUO 2793
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AUD 0.0989
Multiples of: 5

                   
WM10P20M2


Transistor: P-MOSFET; unipolar; SOT23
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Wayon 2660
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AUD 0.2069
Multiples of: 1

                   
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