MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFH5250TRPBF


Transistor: N-MOSFET; unipolar; 25V; 45A; 3.6W; PQFN5X6
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Infineon 3880
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AUD 1.1353
Multiples of: 1

100 A25 V1.15 mOhmsN - Channel    3.6 WSmd/SmtPQFN - 8ReelSi1 Channel20 V52 nC   
IRFRC20PBF


N-Channel 600 V 2A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
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Vishay 3359
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AUD 0.7339
Multiples of: 1

2 A600 V4.4 OhmsN - Channel 2 V- 55 C+ 150 C42 WSmd/SmtTO - 252 - 3TubeSi1 Channel10 V18 nCEnhancement  
SI7617DN-T1-GE3


P-Channel 30 V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
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Vishay 2910
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AUD 0.6743
Multiples of: 3000

   P - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK 1212 - 8Reel       
RT1E050RPTR


MOSFET 4V Drive Pch MOSFET Drive Pch
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ROHM 2910
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AUD 0.68
Multiples of: 1

5 A30 V26 mOhmsP - Channel 2.5 V- 55 C+ 150 C1.25 WSmd/SmtTSST - 8Cut TapeSi1 Channel20 V13 nCEnhancement  
STL8P4LLF6


MOSFET P-channel 40 V, 0.0175 Ohm typ., 8 A STripFET F6 Power MOSFET in a PowerFLAT 3.3 x 3.3 package
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STMicroelectronics 2910
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AUD 0.6709
Multiples of: 3000

8 A40 V20.5 mOhmsP - Channel 1 v to 2.5 V- 55 C+ 150 C2.9 WSmd/SmtPowerflat - 8Cut Tape-1 Channel+/- 20 V22 nCEnhancement Stripfet
RF4E070BNTR


ROHM Semiconductor MOSFET 4.5V Drive Nch MOSFET
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ROHM 2910
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AUD 0.6895
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7 A30 V28.6 mOhmsN - Channel 2 V- 55 C+ 150 C2 WSmd/SmtDFN2020 - 8ReelSi1 Channel20 V8.9 nC   
IRF630


Transistor: N-MOSFET; unipolar; 200V; 5.7A; 75W; TO220-3
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STMicroelectronics 2910
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AUD 0.7276
Multiples of: 1

            Supermesh      
SIR410DP-T1-GE3


MOSFET 20V Vds 20V Vgs PowerPAK SO-8
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Vishay 2910
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AUD 0.7347
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8ReelSi     Trenchfet, Powerpak
STL6P3LLH6


STMicroelectronics MOSFET
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STMicroelectronics 2910
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AUD 0.7347
Multiples of: 3000

6 A30 V30 mOhmsP - Channel20 V1 V- 55 C+ 150 C2.9 WSmd/SmtPowerflat - 8Cut TapeSi1 Channel20 V12 nCEnhancement Stripfet
SI7108DN-T1-GE3


N-Channel 20 V 14A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 2908
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AUD 0.8445
Multiples of: 1

22 A20 V4.9 mOhmsN - Channel 2 V- 55 C+ 150 C3.8 WSMD/SMTPOWERPAK - 1212 - 8Reel , Cut TapeSi1 Channel- 16 V , 16 V20 nCEnhancement TrenchFET
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