MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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First...681682683684685...
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NVTFS4C05NTAG


ON Semiconductor MOSFET NFET U8FL 30V 75A 3.6MOHM
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ON Semiconductor 520405
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AUD 0.6488
Multiples of: 1

102 A30 V3.6 mOhmsN - Channel     Smd/SmtWDFN - 8ReelSi    Aec - Q101 
IRFR420TRLPBF


N-Channel 500 V 2.4A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
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Vishay 17460
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AUD 0.6437
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtDPAKReelSi      
IRFR024NTRLPBF


Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; DPAK
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Infineon 2910
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AUD 0.6317
Multiples of: 1

16 A55 V75 mOhmsN - Channel    38 WSmd/SmtDPAKReelSi1 Channel20 V13.3 nC   
PJQ5526-AU_R2_002A1


MOSFETs 30V N-Channel (LL) SGT MOSFET
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Panjit 2910
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AUD 0.6222
Multiples of: 1

73 A30 V5 mOhmsN - Channel 2.5 V- 55 C+ 175 C43 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V15 nCEnhancementAEC - Q101 
SIR424DP-T1-GE3


N-Channel 20 V 30A (Tc) 4.8W (Ta), 41.7W (Tc) Surface Mount PowerPAK® SO-8
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Vishay 2910
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AUD 0.6274
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8ReelSi     Trenchfet, Powerpak
FDMA1032CZ


MOSFET 20V Complementary PowerTrench MOSFET
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ON Semiconductor 2910
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AUD 0.6437
Multiples of: 3000

3.7 A20 V37 mOhmsN - Channel  - 55 C+ 150 C1.4 WSmd/SmtMICRO - FET - 8ReelSi2 Channel12 V Enhancement Powertrench
FDMA86251


Fairchild Semiconductor MOSFET
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ON Semiconductor 2910
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AUD 0.6629
Multiples of: 3000

2.4 A150 V333 mOhmsN - Channel 2 V- 55 C+ 150 C2.4 WSmd/SmtMICRO - FET - 6ReelSi1 Channel20 V4.1 nCEnhancement Powertrench
SQ3418AEEV-T1_GE3


MOSFET N-Chnl 40-V (D-S) AEC-Q101 Qualified
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Vishay 2910
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AUD 0.8955
Multiples of: 3000

8 A40 V26 mOhmsN - Channel 1.5 V- 55 C+ 175 C5 WSmd/SmtTSOP - 6ReelSi1 Channel20 V12.4 nCEnhancementAec - Q101Trenchfet
TPN6R003NL,LQ


N-Channel 30 V 27A (Tc) 700mW (Ta), 32W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
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Toshiba 2910
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AUD 0.55
Multiples of: 1

56 A30 V6.8 mOhmsn - channel20 V2.3 V- 55 C+ 150 C32 Wsmd/smtTSON - 8Reelsi1 channel20 V17 nCenhancement  
SIS410DN-T1-GE3


MOSFET 20V Vds 20V Vgs PowerPAK 1212-8
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Vishay 0
6 to 16 Weeks Calender.png

AUD 0.445
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK 1212 - 8ReelSi     Trenchfet, Powerpak
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