MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ZXM62P02E6TA


P-Channel 20 V 2.3A (Ta) 1.1W (Ta) Surface Mount SOT-23-6
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Diodes Incorporated 14550
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AUD 0.5993
Multiples of: 3000

2.3 A20 V200 mOhmsP - channel 700 mV- 55 C+ 150 C1.1 WSmd/smtSOT - 23 - 6ReelSi1 Channel- 4.5 V Enhancement  
BSP122,115


N-Channel 200 V 550mA (Ta) 1.5W (Ta) Surface Mount SOT-223
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Nexperia 13245
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AUD 0.6144
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 223Reel       
IRF7389TRPBF


Transistor: N/P-MOSFET; unipolar; 30/-30V; 7.3/-5.3A; 2.5W; SO8
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Infineon 7760
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AUD 0.4851
Multiples of: 4000

7.3 A30 V46 mOhmsN - Channel, P - Channel20 V   2.5 WSmd/SmtSOIC - 8ReelSi2 Channel20 V22 nC   
SISS27DN-T1-GE3


Vishay Semiconductors MOSFET -30V 5.6mOhm10V -50A P-Ch G-III
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Vishay 2910
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AUD 0.531
Multiples of: 3000

- 50 A- 30 V5.6 mOhmsP - Channel - 1 v to - 2.2 V- 55 C+ 150 C57 WSmd/SmtPOWERPAK - 1212 - 8ReelSi1 Channel20 V45 nCEnhancement Trenchfet Power Mosfet
TT8M3TR


ROHM Semiconductor MOSFET
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ROHM 2910
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AUD 0.5345
Multiples of: 1

2.5 A , 2.4 A20 v , - 20 V140 mOhms , 360 mOhmsN - Channel, P - Channel 300 mV , - 300 mV- 55 C+ 150 C1.25 WSmd/SmtTSST - 8ReelSi2 Channel+/- 10 v , +/- 10 V3.6 nC , 6.7 nCEnhancement  
RVQ040N05HZGTR


MOSFET 45V N-CHANNEL 4A
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ROHM 2910
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AUD 0.5494
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           Cut Tape       
NVMYS011N04CTWG


MOSFET 40V 0.9Ohm 322A Single N-Channel
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ON Semiconductor 2910
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AUD 0.5385
Multiples of: 1

           Cut Tape       
FDC3512


MOSFET 80V N-Ch PowerTrench
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ON Semiconductor 2910
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AUD 0.5813
Multiples of: 1

3 A80 V77 mOhmsN - Channel  - 55 C+ 150 C1.6 WSmd/SmtSSOT - 6ReelSi1 Channel20 V Enhancement Powertrench
PJQ5435E-AU_R2_006A1


MOSFETs 30V P-Channel Enhancement Mode MOSFET
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Panjit 2900
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AUD 0.5467
Multiples of: 1

47 A30 V12.1 mOhmsP - Channel 2.5 V- 55 C+ 175 C43 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 25 V , + 25 V34 nCEnhancementAEC - Q101 
SIZ200DT-T1-GE3


MOSFET 30V Vds 20/-16V Vgs PowerPAIR 3x3S
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Vishay 0
6 to 16 Weeks Calender.png

AUD 0.5728
Multiples of: 3000

61 A , 60 A30 V5.5 mOhms , 5.8 mOhmsN - Channel 1.1 V- 55 C+ 150 C33 WSMD/SMTPowerpair - 3X3 - 8Reel , Cut TapeSi2 Channel- 16 V , 20 V28 nC , 30 nCEnhancement TrenchFET
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First...681682683684685...

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