MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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First...681682683684685...
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN62D0SFD-7


Diodes Incorporated MOSFET MOSFET BVDSS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 2910
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AUD 0.0989
Multiples of: 3000

540 mA60 V2 OhmsN - Channel 1.6 V- 55 C+ 150 C0.89 WSmd/SmtX1 - DFN1212 - 3ReelSi1 Channel20 V0.87 nCEnhancement  
LWN2H550AT


SOT-23-6L MOSFETs ROHS
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Lewa Micro 2910
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AUD 0.0995
Multiples of: 5

                   
DMP2004WK-7


Diodes Incorporated MOSFET 250mW -20Vdss
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Diodes Incorporated 2910
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AUD 0.0997
Multiples of: 5

400 mA- 20 V900 mOhmsP - Channel  - 55 C+ 150 C250 mWSmd/SmtSOT - 323 - 3ReelSi1 Channel8 V Enhancement  
AO6601


SOT-23-6 MOSFETs ROHS
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KEXIN 2910
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AUD 0.1016
Multiples of: 5

                   
CJM3005


30V 5A 32mΩ@10V 1V N Channel DFNWB-6L-J(2x2) MOSFETs ROHS
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Changjing Electronics Technology 2910
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AUD 0.1026
Multiples of: 5

                   
CMSN1012H3-HF


SOT-523 MOSFETs ROHS
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Comchip 2910
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AUD 0.1036
Multiples of: 5

                   
WM02DN08T


Transistor: N-MOSFET x2; unipolar; SOT563
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Wayon 2400
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AUD 0.1045
Multiples of: 1

                   
WM04P56M2


Transistor: P-MOSFET; unipolar; SOT23
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Wayon 2097
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AUD 0.1045
Multiples of: 1

                   
WM01P60M


Transistor: P-MOSFET; unipolar; SOT23
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Wayon 1421
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AUD 0.1066
Multiples of: 1

                   
SSM3K56FS,LF


Toshiba MOSFET N-Ch U-MOSVI FET ID 0.8A 20VDSS 55pF
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Toshiba 0
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AUD 0.0817
Multiples of: 3000

8 A20 V840 mOhmsN - Channel 0.4 v to 1 V- 55 C+ 150 C150 mWSmd/SmtSSM - 3ReelSi1 Channel8 V1 nCEnhancement  
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