MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS84Q-7-F


50V 130mA 300mW 10O@10V,12.6A P Channel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 8730
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AUD 0.0518
Multiples of: 3000

- 130 mA- 50 V10 OhmsP - Channel - 2 V- 55 C+ 150 C300 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V0.29 nCEnhancementAec - Q101 
AUIRLR3410TRL


International Rectifier MOSFET AUTO 100V 1 N-CH HEXFET 105mOhms
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Infineon 2972
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AUD 1.8683
Multiples of: 1

17 A100 V105 mOhmsN - Channel 2 V- 55 C+ 175 C79 WSmd/SmtDPAK - 3ReelSi1 Channel16 V34 nCEnhancementAec - Q101 
IXFH16N50P


500V 16A 300W 400mO@8A,10V null TO-247-3 MOSFETs ROHS
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IXYS 2972
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AUD 4.7667
Multiples of: 1

16 A500 V400 mOhmsn - channel  - 55 C+ 150 C300 Wthrough holeTO - 247 - 3Tubesi1 channel30 V enhancement hyperfet
WSD4048DN56


40V 20A 14mΩ@10V,10A 25W 2.5V@250uA 1PCSN-Channel&1PCSP-Channel DFN-8(5x6) MOSFETs ROHS
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Winsok 2970
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AUD 0.4332
Multiples of: 1

                   
RF4E080GNTR


ROHM Semiconductor MOSFET 4.5V Drive Nch MOSFET
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ROHM 2969
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AUD 0.227
Multiples of: 1

8 A30 V17.6 mOhmsN - Channel 2.5 V- 55 C+ 150 C2 WSmd/SmtDFN2020 - 8ReelSi1 Channel20 V5.8 nC   
BSC112N06LDATMA1


MOSFET TRENCH 40<-<100V
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Infineon 2969
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AUD 1.004
Multiples of: 1

           Cut Tape       
ST2305-HXY


20V 3A 60m 1PCSPChannel SOT-23 MOSFETs ROHS
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HXY MOS 2968
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AUD 0.0315
Multiples of: 20

                   
JMTK3005A


TO-252 MOSFETs ROHS
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JieJie 2968
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AUD 0.1178
Multiples of: 5

                   
PMPB10XNEZ


MOSFET 20V single N-channel Trench MOSFET
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Nexperia 2968
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AUD 0.2043
Multiples of: 1

12.9 A20 V25 mOhmsN - Channel 400 mV- 55 C+ 150 C12.5 WSmd/SmtDfn2020md - 6Cut TapeSi1 Channel12 V23 nCEnhancement  
IRFR9110TRPBF


P-Channel 100 V 3.1A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak
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Vishay 1940
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AUD 0.7423
Multiples of: 2000

   P - Channel  - 55 C+ 150 C Smd/SmtDPAKReelSi      
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