MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI7465DP-T1-E3


P-Channel 60 V 3.2A (Ta) 1.5W (Ta) Surface Mount PowerPAK® SO-8
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Vishay 120947
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AUD 0.8406
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5 A60 V64 mOhmsP - Channel 1 V- 55 C+ 150 C3.5 WSmd/SmtPOWERPAK SO - 8ReelSi1 Channel- 10 V26 nCEnhancement Trenchfet/Powerpak
IRFR014TRLPBF-BE3


N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-PAK (TO-252AA)
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Vishay 21225
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AUD 0.7963
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7.7 A60 V200 mOhmsN - Channel 4 V- 55 C+ 150 C2.5 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V11 nCEnhancement  
FDMA3023PZ


MOSFET 30V 2.9A Dual P Ch PowerTrench
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ON Semiconductor 2910
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AUD 0.7649
Multiples of: 3000

2.9 A30 V90 mOhmsp - channel  - 55 C+ 150 C1.4 Wsmd/smtMICRO - FET - 6Reelsi2 channel8 V enhancement powertrench
SI6954ADQ-T1-GE3


Vishay Semiconductors MOSFET Dual N-Ch MOSFET 30V 53mohm 10V
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Vishay 2910
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AUD 0.8282
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3.1 A30 V53 mOhmsN - Channel 1 V- 55 C+ 150 C830 mWSmd/SmtTSSOP - 8ReelSi 20 V8 nCEnhancement Trenchfet
ATP102-TL-H


MOSFET SWITCHING DEVICE
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ON Semiconductor 2910
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AUD 0.7351
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- 40 A- 30 V18.5 mOhmsP - Channel20 V - 55 C+ 150 C40 WSmd/SmtDPAK - 3Reel   34 nC   
RH7L03BBKFRATCB


MOSFETs DFN8 N CHAN 40V
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ROHM 2910
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AUD 0.7569
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35 A60 V26.4 mOhmsN - Channel 2.5 V- 55 C+ 175 C33 WSMD/SMTDFN - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V EnhancementAEC - Q101 
STD2NK90Z-1


MOSFET N-Ch, 900V-5ohms Zener SuperMESH 2.1A
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STMicroelectronics 2910
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AUD 0.7634
Multiples of: 3000

2.1 A900 V6.5 OhmsN - Channel30 V - 55 C+ 150 C70 WThrough HoleIPAK - 3TubeSi1 Channel30 V Enhancement Supermesh
STL40DN3LLH5


MOSFET Dual N-Ch 30V 11A 0.016 Ohm STripFET V
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STMicroelectronics 2910
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AUD 0.7845
Multiples of: 3000

40 A30 V16 mOhmsN - Channel 1.5 V  60 WSmd/SmtPowerflat 5X6ReelSi2 Channel22 V4.5 nC Aec - Q101Stripfet
SQS966ENW-T1_GE3


MOSFET 60V Vds 20V Vgs PowerPAK 1212-8W
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Vishay 2910
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AUD 0.7924
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6 A60 V36 mOhmsN - Channel 1.5 V- 55 C+ 175 C27.8 WSMD/SMTPOWERPAK - 1212 - 8Reel , Cut TapeSi2 Channel- 20 V , 20 V6.2 nCEnhancement  
ZXMP3A16GTA


MOSFET 30V P Chnl UMOS
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Diodes Incorporated 970
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AUD 0.7896
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7.5 A30 V45 mOhmsP - Channel 1 V- 55 C+ 150 C3.9 WSmd/SmtSOT - 223 - 3Cut TapeSi1 Channel10 V29.6 nCEnhancement  
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