MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSP716NH6327XTSA1


Transistor: N-MOSFET; unipolar; 75V; 2.3A; 1.8W; SOT223
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Infineon 3880
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AUD 0.3508
Multiples of: 1

            Optimos      
AO4832-MS


30V 10A 12mΩ@10V,10A 2W 2.5V@250uA 100pF@15V 2 N-Channel 910pF@15V 11nC@10V +150℃@(Tj) SOP-8 MOSFETs ROHS
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MSKSEMI 2929
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AUD 0.285
Multiples of: 5

                   
QS5U12TR


ROHM Semiconductor MOSFET N-CH 30V 2A TSMT5
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ROHM 2929
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AUD 0.3841
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2 A30 V110 mOhmsN - Channel  - 40 C+ 125 C900 mWSmd/SmtT SMT - 5ReelSi1 Channel12 V Enhancement  
PMGD780SN.115


Transistor: N-MOSFET x2; unipolar; 60V; 0.31A; 410mW; SOT363
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Nexperia 2928
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AUD 0.2689
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DMNH6042SSDQ-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 2927
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AUD 0.7263
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          SO - 8Cut TapeSi    Aec - Q101 
IRFR420ATRPBF


MOSFET N-Chan 500V 3.3 Amp
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Vishay 2927
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AUD 1.1332
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   N - Channel  - 55 C+ 150 C Smd/SmtDPAKReelSi      
IPTG011N08NM5ATMA1


MOSFET TRENCH 40<-<100V
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Infineon 2927
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AUD 7.1654
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408 A80 V1.1 mOhmsN - Channel 3.8 V- 55 C+ 175 C375 WSMD/SMTHSOG - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V178 nCEnhancement  
PJA3441


SOT-23 MOSFETs ROHS
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Panjit 2926
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AUD 0.0945
Multiples of: 5

                   
AO4419-HXY


30V 9A 18m 1PCSPChannel SOP-8 MOSFETs ROHS
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HXY MOS 2924
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AUD 0.0951
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IRLR2908TRPBF


Transistor: N-MOSFET; unipolar; 80V; 39A; 120W; DPAK
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Infineon 2699
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AUD 0.8196
Multiples of: 1

39 A80 V30 mOhmsN - Channel    120 WSmd/SmtDPAKReelSi1 Channel16 V22 nC   
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