MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQJ479EP-T1_GE3


Trans MOSFET P-CH 80V 32A Automotive 5-Pin(4+Tab) PowerPAK SO T/R
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Vishay 7185
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AUD 1.0911
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- 32 A- 80 V27.5 mOhmsP - Channel - 2.5 V- 55 C+ 175 C68 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel20 V150 nCEnhancement  
IRFR3709ZTRRPBF


Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK
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Infineon 2910
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AUD 0.8215
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            hexfet®      
QS8K13TCR


MOSFET 4V Drive Nch+Nch MOSFET
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ROHM 2910
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AUD 0.8045
Multiples of: 1

6 A , 6 A30 v , 30 V20 mOhms , 20 mOhmsN - Channel 1 v , 1 V- 55 C+ 150 C1.5 WSmd/SmtT SMT - 8ReelSi2 Channel+/- 20 v , +/- 20 V20 nC , 20 nCEnhancement  
SI7623DN-T1-GE3


P-Channel 20 V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
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Vishay 2910
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AUD 0.7942
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35 A20 V3.1 mOhmsP - Channel 1.5 V- 55 C+ 150 C52 WSmd/SmtPOWERPAK 1212 - 8ReelSi1 Channel12 V180 nCEnhancement P - Channel Gen Iii
FDMC7664


MOSFET N-Chan 30/20V PowerTrench
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ON Semiconductor 2910
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AUD 0.847
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18.8 A30 V4.5 mOhmsn - channel  - 55 C+ 150 C2.3 Wsmd/smtMLPReelsi1 channel20 V enhancement powertrench
HT8KE5HTB1


MOSFETs HSMTR 100V 6.5A N CHAN MOS
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ROHM 2910
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AUD 0.8357
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6.5 A100 V210 mOhmsN - Channel 4 V- 55 C+ 150 C13 WSMD/SMTH SMT - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V3.7 nCEnhancement  
SI6562CDQ-T1-GE3


MOSFET 20V 6.7/6.1A 22/30mohm @ 4.5V
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Vishay 2910
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AUD 0.8396
Multiples of: 3000

6.7 A , 6.1 A20 V22 mOhms , 30 mOhmsN And P - Channel 600 mV- 55 C+ 150 C1.6 w , 1.7 WSmd/SmtTSSOP - 8ReelSi2 Channel4.5 v , - 4.5 V15 nC , 34 nCEnhancement Trenchfet
NVMYS3D8N04CLTWG


MOSFETs T6 40V LL LFPAK
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ON Semiconductor 2910
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AUD 0.8504
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87 A40 V3.7 mOhmsN - Channel 2 V- 55 C+ 175 C55 WSMD/SMTLFPAK - 4Reel , Cut TapeSi1 Channel- 20 V , + 20 V18 nCEnhancement  
NVTFWS015N04CTAG


MOSFET Single N-Chn Pwr Mosfet 40V
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ON Semiconductor 2910
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AUD 0.7831
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           Cut Tape       
SQJ488EP-T1-GE3


MOSFET 100V 32A 27watt AEC-Q101 Qualified
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Vishay 0
6 to 16 Weeks Calender.png

AUD 1.3512
Multiples of: 1

42 A100 V0.0176 OhmsN - Channel 1.5 V- 55 C+ 175 C83 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel20 V27 nCEnhancement Trenchfet
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