MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO3415


MOSFET P Channel -20V 4.3A 1.5V @ 250uA 45mΩ @ 3.5A,4.5V SOT-23L RoHS
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HUASHUO 2919
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AUD 0.0744
Multiples of: 10

                   
DMG1023UV-7


MOSFET MOSFET P-CHANNEL
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Diodes Incorporated 2919
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AUD 0.1332
Multiples of: 5

1.03 A20 V500 mOhmsP - Channel  - 55 C+ 150 C530 mWSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel6 V622.4 pC   
HSCC2734


MOSFET DoubleNChannelCommon Drain -20V 8A 1.2V @ 250uA 16mΩ @ 2A,4.5V DFN2*3 RoHS
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HUASHUO 2919
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AUD 0.1596
Multiples of: 5

                   
HSBB4076


PRPAK-8(3x3) MOSFETs ROHS
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HUASHUO 2919
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AUD 0.3355
Multiples of: 1

                   
FDPF15N65


MOSFET 650V 15A 0.44OHMS NCH POWER TRENCH
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ON Semiconductor 2919
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AUD 3.1874
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7 A650 V440 mOhmsN - Channel  - 55 C+ 150 C38.5 WThrough HoleTO - 220FTubeSi1 Channel30 V Enhancement  
DMTH10H025LK3Q-13


MOSFET MOSFET BVDSS: 61V-100V
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Diodes Incorporated 2917
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AUD 0.7207
Multiples of: 1

51.7 A100 V22 mOhmsN - Channel 1 V- 55 C+ 175 C100 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V21 nCEnhancementAec - Q101 
APM2321AAC-TRG-VB


20V 5A 35mΩ@10V P Channel SOT-23 MOSFETs ROHS
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VBsemi Elec 2813
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AUD 0.0617
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CSD25501F3


MOSFET -20-V, P channel NexFET power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
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Texas Instruments 2429
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AUD 0.1138
Multiples of: 5

3.6 A20 V260 mOhmsP - Channel 1.05 V- 55 C+ 150 C500 mWSmd/SmtPICOSTAR - 3Cut TapeSi1 Channel- 20 V1.02 nCEnhancement  
ASDM20N12ZB-R


20V 12A 11.5mΩ@4.5V,5A 1.14W 950mV@250uA 150pF@20V N Channel 1.035nF@20V +150℃@(Tj) SOT-23-3 MOSFETs ROHS
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Ascend 1736
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AUD 0.0443
Multiples of: 10

                   
AO3422


55V 2A 120mΩ@10V,2A 1.56W 1V@250uA N Channel SOT-23-3L MOSFETs ROHS
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MSKSEMI 475
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AUD 0.0778
Multiples of: 10

                   
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