MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLML9301TRPBF


MOSFET P Trench 30V 3.6A 2.4V @ 10uA 64 mΩ @ 3.6A,10V SOT-23 (SOT-23-3) RoHS
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Infineon 16237
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AUD 0.0945
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   P Channel      SOT - 23Reel       
SIS903DN-T1-GE3


MOSFET -20V Vds 8V Vgs PowerPAK 1212-8
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Vishay 3121
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AUD 0.7212
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6 A20 V20.1 mOhmsP - Channel 400 mV- 55 C+ 150 C23 WSmd/SmtPOWERPAK - 1212 - 8Cut TapeSi2 Channel4.5 V28 nCEnhancement Trenchfet, Powerpak
ZVN4306AV


N-Channel 60 V 1.1A (Ta) 850mW (Ta) Through Hole TO-92
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Diodes Incorporated 3119
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AUD 1.1244
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1.1 A60 V450 mOhmsN - Channel20 V - 55 C+ 150 C850 mWThrough HoleTO - 92 - 3ReelSi1 Channel20 V Enhancement  
IRFP4321PBF


MOSFET N Trench 150V 78A 5V @ 250uA 15.5 mΩ @ 33A,10V TO-247 (AC) RoHS
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Infineon 3118
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AUD 2.931
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78 A150 V12 mOhmsN - Channel    310 WThrough HoleTO - 247ACTubeSi1 Channel30 V71 nC   
AO3418-HXY


30V 5.8A 24m 1PCSNChannel SOT-23-3L MOSFETs ROHS
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HXY MOS 3113
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AUD 0.0684
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DMP2088LCP3-7


MOSFET BVDSS: 8V~24V X2-DSN1006-3 T&R 3K
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Diodes Incorporated 3113
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AUD 0.2004
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           Cut TapeSi      
50P03DF


30V 50A 8.5m@10V,10A 5W 2.5V@250uA 1PCSPChannel PDFN-8(3x3) MOSFETs ROHS
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GOODWORK 3108
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AUD 0.1423
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SI8802DB-T2-E1


MOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8
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Vishay 3096
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AUD 0.1921
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3.5 A8 V54 mOhmsN - Channel 350 mV- 55 C+ 150 C0.9 WSmd/SmtMICRO - FOOT - 4ReelSi1 Channel4.5 V4.3 nCEnhancement Trenchfet
IPD15N06S2L64ATMA2


MOSFET N-CHANNEL_55/60V
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Infineon 3081
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AUD 0.4837
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19 A55 V47 mOhmsN - Channel 1.2 V- 55 C+ 175 C47 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V13 nCEnhancementAec - Q101 
NTD18N06LT4G


MOSFET 60V 18A N-Channel
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ON Semiconductor 2915
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AUD 0.8538
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   N - Channel  - 55 C+ 175 C Smd/SmtDPAKReel       
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