MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO4410


30V 15A 1.5W 7.5mΩ@10V,10A 1.5V@250uA N Channel SOP-8 MOSFETs ROHS
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JSMSEMI 5475
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AUD 0.1892
Multiples of: 5

                   
PHB32N06LT,118


Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 136A; 97W; D2PAK
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Nexperia 5239
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AUD 0.793
Multiples of: 1

34 A60 V37 mOhmsN - Channel  - 55 C+ 175 C97 WSmd/SmtSOT - 404ReelSi1 Channel15 V Enhancement  
TMN10010S


SOP-8 MOSFETs ROHS
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Tritech-MOS 2914
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AUD 0.0832
Multiples of: 5

                   
PJM15N30DF


30V 15A 12m@10V,11A 3W 2.5V@250uA 1 N-Channel DFN-6L(2x2) MOSFETs ROHS
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Pingjingsemi 2914
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AUD 0.1332
Multiples of: 5

                   
AP4509AGM


- MOSFETs ROHS
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APEC 2914
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AUD 0.3879
Multiples of: 5

                   
FDB86360_F085


MOSFET N-Channel Power Trench MOSFET
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ON Semiconductor 2914
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AUD 4.6463
Multiples of: 1

110 A80 V1.5 mOhmsn - channel20 V3 V- 55 C+ 175 C333 Wsmd/smtTO - 263 - 3Reelsi1 channel20 V207 nC  powertrench
HSL3002


30V 6A 24mΩ@10V,5A 1.5W 2.5V@250uA null SOT-223 MOSFETs ROHS
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HUASHUO 2905
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AUD 0.1741
Multiples of: 5

                   
HSBA4204


40V 30A 11.5mΩ@10V,6A 2W 2.5V@250uA 88pF@15V 2 N-Channel 1.314nF@15V 10.7nC@4.5V -55℃~+150℃@(Tj) PRPAK5x6 MOSFETs ROHS
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HUASHUO 2905
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AUD 0.4981
Multiples of: 5

                   
PJM12P20DF


DFN-6L(2x2) MOSFETs ROHS
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Pingjingsemi 1886
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AUD 0.0951
Multiples of: 5

                   
BUK9Y30-75B,115


NXP Semiconductors MOSFET TRENCH 31V-99V G3
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Nexperia 85
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AUD 0.7027
Multiples of: 1

34 A75 V28 mOhmsN - Channel  - 55 C+ 175 C85 WSmd/SmtLFPAK56 - 5ReelSi1 Channel15 V Enhancement  
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