MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
8205A


20V 5A 60mΩ@4.5V,2.8A N Channel SOT-23-6 MOSFETs ROHS
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Yongyutai Electronics 3201
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AUD 0.0287
Multiples of: 20

                   
AGM403Q


40V 85A 70W 2.8m@10V,20A 1.6V@250uA 1PCSNChannel PDFN(5x6) MOSFETs ROHS
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AGM-Semi 3186
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AUD 0.3174
Multiples of: 5

                   
BSC042NE7NS3 G


MOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3
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Infineon 3186
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AUD 2.2817
Multiples of: 1

100 A75 V3.7 mOhmsN - Channel 2.3 V- 55 C+ 150 C125 WSmd/SmtTDSON - 8ReelSi1 Channel20 V69 nCEnhancement Optimos
VN10KN3-G-P002


Microchip Technology MOSFET N-CH Enhancmnt Mode MOSFET
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Microchip 3184
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AUD 0.7438
Multiples of: 1

310 mA60 V7.5 OhmsN - Channel  - 55 C+ 150 C1 WThrough HoleTO - 92 - 3Reel 1 Channel30 V Enhancement  
IRLZ34PBF-BE3


N-Channel 60V 30A (Tc) 88W (Tc) Through Hole TO-220AB
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Vishay 3183
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AUD 1.5467
Multiples of: 1

30 A60 V50 mOhmsN - Channel 2 V- 55 C+ 175 C88 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 10 V , + 10 V35 nCEnhancement  
AOD413A(UMW)


TO-252 MOSFETs ROHS
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Youtai 3181
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AUD 0.1138
Multiples of: 5

                   
NCE1540K


MOSFET N Trench 150V 40A (Tc) 4.5V @ 250uA 45 mΩ @ 18A,10V TO-252 RoHS
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NCE Power 3181
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AUD 0.5309
Multiples of: 1

                   
FDS2582


Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.5W; SO8
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ON Semiconductor 3181
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AUD 0.9732
Multiples of: 1

   N Channel               
DMG6898LSD-13


MOSFET MOSFET N-CHAN
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Diodes Incorporated 3176
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AUD 0.2953
Multiples of: 5

9.5 A20 V11 mOhmsN - Channel 500 mV- 55 C+ 150 C1.28 WSmd/SmtSO - 8ReelSi2 Channel12 V26 nC , 26 nCEnhancement  
DMP3036SFG-7


MOSFET P-Ch Enh Mode FET Vdss -30V 25Vgss
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Diodes Incorporated 2900
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AUD 0.3929
Multiples of: 1

8.7 A30 V13 mOhmsP - Channel 1 V- 55 C+ 150 C2.3 WSmd/SmtPowerdi3333 - 8Cut TapeSi1 Channel25 V16.5 nCEnhancement Powerdi
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