MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMC2038LVT-7


MOSFET MOSFET BVDSS: 8V-24V 8V-24V,TSOT23,3K
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Diodes Incorporated 132787
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AUD 0.1292
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4.5 A , 3.1 A20 V35 mOhms , 74 mOhmsN - Channel, P - Channel 400 mV- 55 C+ 150 C1.1 WSmd/SmtTSOT - 26 - 6Cut TapeSi2 Channel4.5 V12 nC , 14 nCEnhancement  
2N7008-G


Transistor: N-MOSFET; unipolar; 60V; 0.5A; TO92
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Microchip 3231
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AUD 0.5115
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230 mA60 V7.5 OhmsN - Channel  - 55 C+ 150 C1 WThrough HoleTO - 92BulkSi1 Channel30 V Enhancement  
SSM3J35AMFV,L3F


MOSFET LowON Res MOSFET ID=-.25A VDSS=-20V
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Toshiba 3230
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AUD 0.0675
Multiples of: 5

250 mA20 V1.1 OhmsP - Channel 1 V + 150 C500 mW (1/2 w)Smd/SmtSOT - 723 - 3Cut TapeSi1 Channel10 V Enhancement  
NTR3A30PZ-HXY


20V 5A 30m 1PCSPChannel SOT-23 MOSFETs ROHS
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HXY MOS 3230
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AUD 0.0714
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BSC032NE2LS


MOSFET N-Channel 25V MOSFET
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Infineon 3230
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AUD 0.4854
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84 A25 V2.7 mOhmsN - Channel 1.2 V- 55 C+ 150 C37 WSmd/SmtTDSON - 8ReelSi1 Channel20 V21 nCEnhancement Optimos
ZVN4525ZTA


Diodes Incorporated MOSFET N-Chnl 250V
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Diodes Incorporated 3230
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AUD 0.5762
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240 mA250 V9.5 OhmsN - Channel40 V - 55 C+ 150 C1.2 WSmd/SmtSOT - 89 - 3Reel    Enhancement  
IAUCN08S7L110ATMA1


MOSFETs MOSFET_(75V 120V(
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Infineon 3230
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AUD 0.6408
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50 A80 V11 mOhmsN - Channel 2 V- 55 C+ 175 C58 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V14.8 nCEnhancement  
SIR188LDP-T1-RE3


MOSFETs N-CHANNEL 60-V (D-S)
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Vishay 3225
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AUD 0.99
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93.6 A60 V3.75 mOhmsN - Channel 2.5 V- 55 C+ 150 C SMD/SMTSO - 8 Si1 Channel- 10 V , + 10 V34.6 nCEnhancement PowerPAK
DMP3165L-7


MOSFET MOSFET BVDSS: 25V~30V SOT23 T&R 3K
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Diodes Incorporated 3198
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AUD 0.1135
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3.3 A30 V90 mOhmsP - Channel 2.1 V- 55 C+ 150 C1.3 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V2 nCEnhancement  
MIC94052YC6-TR


MOSFET P Trench 6V 2A 1.2V @ 250uA 84 mΩ @ 100mA,4.5V SC-70-6 (SOT-363) RoHS
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Microchip 2925
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AUD 1.0686
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2 A- 6 V70 mOhmsP - Channel1.8 V- 0.5 V- 40 C+ 150 C270 WSmd/SmtSC - 70 - 6ReelSi 1.8 V Enhancement  
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