MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIR626ADP-T1-RE3


MOSFET N-Channel 60-V
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Vishay 10786
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AUD 1.4727
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165 A60 V1.75 mOhmsN - Channel 3.5 V- 55 C+ 150 C104 WSMD/SMT Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V55 nCEnhancement TrenchFET
FDS8958B


SOIC-8 MOSFETs ROHS
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TECH PUBLIC 2963
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AUD 0.3427
Multiples of: 5

                   
SI3437DV


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 2958
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AUD 0.2865
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IPP050N03LF2SAKSA1


MOSFETs TRENCH <= 40V
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Infineon 2957
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AUD 0.7782
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53 A30 V4.95 mOhmsN - Channel 2.35 V- 55 C+ 175 C65 WThrough Hole TubeSi1 Channel- 20 V , + 20 V21 nCEnhancement StrongIRFET
BUK7M67-60EX


MOSFET BUK7M67-60E/MLFPAK/REEL 7" Q1/
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Nexperia 2956
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AUD 0.2594
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14 A60 V54 mOhmsN - Channel 2.4 V- 55 C+ 175 C31 WSmd/SmtLFPAK33 - 5Cut TapeSi1 Channel20 V6.7 nCEnhancement  
IPD029N04NF2SATMA1


MOSFETs N
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Infineon 2955
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AUD 1.013
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131 A40 V2.9 mOhmsN - Channel 2.1 V- 55 C+ 175 C107 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , + 20 V45 nCEnhancement StrongIRFET
SQ4937EY-T1_GE3


MOSFET Dual P-Chnl 30-V D-S AEC-Q101 Qualified
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Vishay 2955
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AUD 1.1564
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5 A30 V56 mOhms , 56 mOhmsP - Channel 2.5 V- 55 C+ 175 C3.3 WSmd/SmtSO - 8Cut TapeSi2 Channel20 V15 nC , 15 nCEnhancementAec - Q101Trenchfet
DMTH6005LK3-13


MOSFET MOSFET BVDSS:
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Diodes Incorporated 2954
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AUD 0.6945
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         Smd/SmtTO - 252 - 3Cut TapeSi      
IRFH8201TRPBF


Transistor: N-MOSFET; unipolar; 25V; 324A; 156W; PQFN5X6
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Infineon 2954
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AUD 1.0721
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100 A25 V1.6 mOhmsN - Channel20 V1.8 V- 55 C+ 150 C156 WSmd/SmtPQFN - 8 5X6ReelSi1 Channel20 V111 nC  Strongirfet
FDMS86181


MOSFET 100V/20V N-Chnl Power Trench MOSFET
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ON Semiconductor 2857
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AUD 2.3248
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124 A100 V12 mOhmsN - Channel 2 V- 55 C+ 150 C125 WSmd/SmtPOWER56 - 8ReelSi1 Channel+/- 20 V42 nCEnhancement Powertrench
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