MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFR2405TRLPBF


Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
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Infineon 3237
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AUD 0.8922
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56 A55 V16 mOhmsN - Channel    110 WSmd/SmtDPAKReelSi1 Channel20 V70 nC   
GS-065-030-2-L-TR


MOSFET 650V, 30A, GaN E-mode, 8x8 PDFN, Bottom-side cooled
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Gan Systems 3237
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AUD 9.9524
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30 A650 V50 mOhms      SMD/SMTPDFN - 9Reel , Cut TapeGaN - on - Si1 Channel     
ZXMP3F30FHTA


MOSFET 30V P-Channel MOSFET 20V VGS -15.3A IDM
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Diodes Incorporated 3235
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AUD 0.2567
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           Reel       
NCE4009S


MOSFET N Trench 40V 9A (Tc) 2V @ 250uA 16 mΩ @ 8A,10V SOIC-8_150mil RoHS
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NCE Power 3234
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AUD 0.1202
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ZXMN2A01FTA


N-Channel 20 V 1.9A (Ta) 625mW (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 3234
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AUD 0.1457
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2.2 A20 V120 mOhmsN - channel 700 mV- 55 C+ 150 C625 mWSmd/smtSOT - 23ReelSi1 Channel4.5 V3 nCEnhancement  
Si4128DY-T1-E3


MOSFET 30V 10.9A 5.0W 24mohm @ 10V
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Vishay 3234
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AUD 0.3492
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   N - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8 NarrowReelSi     Trenchfet
HSBA50N06


60V 50A 62W 12mΩ@10V,30A 2.5V@250uA null PRPAK5x6 MOSFETs ROHS
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HUASHUO 3233
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AUD 0.2231
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FDS8958B


SOIC-8 MOSFETs ROHS
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TECH PUBLIC 3233
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AUD 0.2299
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FDP2710


MOSFET 250V N-Channel PowerTrench
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ON Semiconductor 3233
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AUD 3.8762
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50 A250 V42 mOhmsN - Channel  - 55 C+ 150 C260 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V Enhancement Powertrench
IXTP96P085T


MOSFET -96 Amps -85V 0.013 Rds
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IXYS 3208
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AUD 5.5175
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96 A85 V13 mOhmsP - Channel 2 V- 55 C+ 150 C298 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V180 nCEnhancement  
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