MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN2004VK-7B


MOSFETs MOSFET BVDSS: 8V-24V SOT563 T&R 8.0K
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Diodes Incorporated 2982
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AUD 0.1189
Multiples of: 5

                   
WSP9926A


MOSFET 2 N Channel (Dual) 20V 7.5A 1.1V @ 250uA 35 mΩ @ 7.5A,4.5V SOP-8_150mil RoHS
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Winsok 2973
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AUD 0.1098
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TP2104K1-G


Transistor: P-MOSFET; unipolar; -40V; -0.6A; 360mW; SOT23-3
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Microchip 2964
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AUD 0.7052
Multiples of: 1

160 mA40 V6 Ohmsp - channel 1 V- 55 C+ 150 C360 mWsmd/smtSOT - 23 (TO - 236AB)Reelsi1 channel- 10 V enhancement  
IPG20N06S4L11AATMA1


MOSFET N-CHANNEL_5560V
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Infineon 2964
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AUD 1.3179
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20 A60 V15.8 mOhmsN - Channel 1.2 V- 55 C+ 175 C65 WSmd/SmtTDSON - 8Cut TapeSi2 Channel16 V53 nCEnhancementAec - Q101Optimos
UT6K3TCR


MOSFET 30V Nch+Nch Si MOSFET
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ROHM 2961
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AUD 0.4269
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5.5 A30 V30 mOhms , 30 mOhmsN - Channel 500 mV- 55 C+ 150 C2 WSmd/SmtHuml2020l - 8Cut TapeSi2 Channel12 V4 nC , 4 nCEnhancement  
HSL4113


40V 5A 1.5W 40m@10V,4A 2.5V@250uA 1PCSPChannel SOT-223 MOSFETs ROHS
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HUASHUO 2958
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AUD 0.1549
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IPN60R2K0PFD7SATMA1


MOSFET CONSUMER
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Infineon 2958
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AUD 0.3497
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           Cut Tape       
IQD016N08NM5SCATMA1


MOSFETs TRENCH 40<-<100V
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Infineon 2948
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AUD 4.1537
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323 A80 V1.57 mOhmsN - Channel 3.8 V- 55 C+ 175 C333 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V106 nCEnhancement OptiMOS
SQ2303CES-T1_GE3


MOSFETs P-CHANNEL 30-V (D-S) 175C MOSFET
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Vishay 2880
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AUD 0.1412
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2.5 A30 V170 mOhmsP - Channel 2.5 V- 55 C+ 175 C1.9 WSMD/SMTSOT - 23 - 3 Si1 Channel+ 20 V4.5 nCEnhancement  
SI7232DN-T1-GE3


MOSFET 20V 25A 23W 16.4mohm @ 4.5V
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Vishay 2564
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AUD 1.1552
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25 A20 V16.4 mOhmsN - Channel 400 mV- 55 C+ 150 C23 WSmd/SmtPOWERPAK 1212 - 8ReelSi2 Channel4.5 V32 nCEnhancement Trenchfet
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