MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BRD2N60


MOSFET N Trench 600V 2A (Tc) 4V @ 250uA 5 Ω @ 1A,10V TO-252 RoHS
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Blue Rocket 3290
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AUD 0.1898
Multiples of: 1

                   
PJT7600_R1_00001


MOSFET N & P Trench 20V 1A,700mA 1V @ 250uA 400 mΩ @ 300mA,1.8V;600 mΩ @ 500mA,1.8V SOT-363 RoHS
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Panjit 3288
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AUD 0.0902
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HSBA3052


MOSFET N Channel 30V 52A 2.5V @ 250uA 6.3mO @ 20A,10V DFN5x6 RoHS
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HUASHUO 3287
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AUD 0.1965
Multiples of: 5

                   
BSP320S H6327


Infineon Technologies MOSFET N-Ch 60V 2.9A SOT-223-3
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Infineon 3287
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AUD 0.4563
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2.9 A60 V120 mOhmsN - Channel 2.1 V- 55 C+ 150 C1.8 WSmd/SmtSOT - 223 - 4ReelSi1 Channel20 V9.7 nCEnhancement  
NTMFS0D7N04XMT1G


MOSFETs 40V T10M IN S08FL PACKAGE
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ON Semiconductor 3287
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AUD 1.1611
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323 A40 V700 uOhmsN - Channel 3.5 V- 55 C+ 175 C134 WSMD/SMTDFN - 5Reel , Cut TapeSi1 Channel- 20 V , + 20 V72.1 nCEnhancement  
TSM4NB60CI C0G


MOSFET 600V, 4A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 3287
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AUD 2.1154
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4 A600 V2.2 OhmsN - Channel 2.5 V- 55 C+ 150 C25 WThrough HoleI TO - 220 - 3Cut TapeSi1 Channel10 V14.5 nCEnhancement  
ZXMP3A16GTA


MOSFET 30V P Chnl UMOS
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Diodes Incorporated 3286
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AUD 0.7071
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7.5 A30 V45 mOhmsP - Channel 1 V- 55 C+ 150 C3.9 WSmd/SmtSOT - 223 - 3Cut TapeSi1 Channel10 V29.6 nCEnhancement  
WSD20L120DN56


20V 120A 2.1mO@4.5V,20A 130W P Channel DFN-8(5.7x5.1) MOSFETs ROHS
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Winsok 3285
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AUD 0.5631
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SSM3J331R,LF


Toshiba MOSFET P-Ch U-MOSVI FET ID -4A -20VDSS 630pF
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Toshiba 3254
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AUD 0.1671
Multiples of: 5

- 4 A- 20 V150 mOhmsP - Channel - 0.3 v to - 1 V- 55 C+ 150 C1 WSmd/SmtSOT - 23 - 3ReelSi1 Channel8 V10.4 nC   
AOD2610E


MOSFET N Trench 60V 46A (Tc) 2.4V @ 250uA 9.5 mΩ @ 20A,10V TO-252 RoHS
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Alpha & Omega 1155
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AUD 0.3654
Multiples of: 1

                   
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