MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO3407A


30V 4.2A 45mΩ@10V,3A 1.56W 2.2V@250uA P Channel SOT-23-3L MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

MSKSEMI 3055
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AUD 0.0476
Multiples of: 10

                   
HXY5N10MI


100V 5A 98mΩ@10V,3A N Channel SOT-23-3L MOSFETs ROHS
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HXY MOS 3055
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AUD 0.0625
Multiples of: 10

                   
IRFH8307TRPBF


Transistor: N-MOSFET; unipolar; 30V; 42A; 156W; PQFN5X6
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Infineon 3055
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AUD 1.0349
Multiples of: 1

100 A30 V1.3 mOhmsN - Channel20 V2.35 V  156 WSmd/SmtPQFN - 8 5X6ReelSi1 Channel20 V50 nC   
ZVN4206ASTZ


Diodes Incorporated MOSFET N-Chnl 60V
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Diodes Incorporated 3052
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AUD 0.4088
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600 mA60 V1.5 OhmsN - channel20 V3 V- 55 C+ 150 C700 mWThrough_HoleTO - 92 - 3BulkSi1 Channel20 V Enhancement  
DI0A4N45SQ2


MOSFETs MOSFET, SO-8, 450V, 0.4A, 150C, N
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Diotec 3051
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AUD 0.4219
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400 mA450 V4.5 OhmsN - Channel 4 V- 55 C+ 150 C2 WSMD/SMTSO - 8Reel , Cut TapeSi2 Channel- 30 V , + 30 V7 nCEnhancement  
BSC009NE2LSATMA1


Transistor: N-MOSFET; unipolar; 25V; 100A; 96W; PG-TDSON-8
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Infineon 3050
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AUD 0.8849
Multiples of: 1

            Optimos      
IPL60R185C7AUMA1


MOSFET HIGH POWER_NEW
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Infineon 2582
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AUD 1.8881
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           Cut Tape       
TP65H480G4JSG-TR


N-Channel 650V 3.6A (Tc) 13.2W (Tc) Surface Mount 3-PQFN (5x6)
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Transphorm 1634
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AUD 0.8816
Multiples of: 1

          3 - SMD , FLAT LEADDigi - Reel®Ganfet (Gallium Nitride)      
BSZ0703LSATMA1


Infineon DIFFERENTIATED MOSFETS
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Infineon 1251
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AUD 0.7792
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           Cut Tape       
SQJ138EP-T1_GE3


MOSFET N-CHANNEL 40-V (D-S) 175C MOSFET
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Vishay 128
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AUD 0.6702
Multiples of: 1

330 A40 V1.5 mOhmsN - Channel 3.5 V- 55 C+ 175 C312 WSMD/SMTPOWERPAK - SO - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V58 nCEnhancement TrenchFET
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